Zobrazeno 1 - 10
of 62
pro vyhledávání: '"Zaman, Rifat"'
Autor:
Khan, Saeed Uz Zaman, Hossain, Md. Shafayat, Hossen, Md. Obaidul, Rahman, Fahim Ur, Zaman, Rifat, Khosru, Quazi D. M.
This paper presents a self-consistent numerical model for calculating the charge profile and gate capacitance and therefore obtaining C-V characterization for a gate-all-around graded nanowire MOSFET with a high mobility axially graded In0.75Ga0.25As
Externí odkaz:
http://arxiv.org/abs/1406.5257
Autor:
Hong, Jennifer, Zaman, Rifat, Coy, Shannon, Pastel, David, Simmons, Nathan, Ball, Perry, Mirza, Sohail, Abdu, William, Pearson, Adam, Lollis, S. Scott
Publikováno v:
In World Neurosurgery June 2018 114:e1007-e1015
Autor:
Browne, Sarah K., Zaman, Rifat, Sampaio, Elizabeth P., Jutivorakool, Kamonwan, Rosen, Lindsey B., Ding, Li, Pancholi, Minjal J., Yang, Lauren M., Priel, Debra Long, Uzel, Gulbu, Freeman, Alexandra F., Hayes, Carlton E., Baxter, Roger, Cohen, Stuart H., Holland, Steven M.
Publikováno v:
In Blood 26 April 2012 119(17):3933-3939
Akademický článek
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Autor:
Tabei, Fatemehsadat1, Zaman, Rifat1, Foysal, Kamrul H.1, Kumar, Rajnish1, Kim, Yeesock2, Chong, Jo Woon1 J.Chong@ttu.edu
Publikováno v:
PLoS ONE. 6/19/2019, Vol. 14 Issue 6, p1-24. 24p.
Autor:
Burbelo, Peter D. *, Browne, Sarah K., Sampaio, Elizabeth P., Giaccone, Giuseppe, Zaman, Rifat, Kristosturyan, Ervand, Rajan, Arun, Ding, Li, Ching, Kathryn H., Berman, Arlene, Oliveira, Joao B., Hsu, Amy P., Klimavicz, Caitlin M., Iadarola, Michael J., Holland, Steven M.
Publikováno v:
In Blood 2 December 2010 116(23):4848-4858
Autor:
Zaman, Rifat1 rifat.zaman@ttu.edu, Chae Ho Cho1 backjoe@gmail.com, Hartmann-Vaccarezza, Konrad2 kthartmann@uc.cl, Tra Nguyen Phan1 tra.phan@ttu.edu, Gwonchan Yoon1 gwonchanyoon@gmail.com, Jo Woon Chong1 J.Chong@ttu.edu
Publikováno v:
Sensors (14248220). Feb2017, Vol. 17 Issue 2, p358. 12p.