Measurement of the spin temperature of optically cooled nuclei and GaAs hyperfine constants in GaAs/AlGaAs quantum dots

Autor: Chekhovich, E. A., Ulhaq, A., Zallo, E., Ding, F., Schmidt, O. G., Skolnick, M. S.

Publikováno v: Nature Materials 16, 982-986 (2017)

Deep cooling of electron and nuclear spins is equivalent to achieving polarization degrees close to 100% and is a key requirement in solid state quantum information technologies. While polarization of individual nuclear spins in diamond and SiC reach

Externí odkaz: http://arxiv.org/abs/1701.02759

An artificial atom locked to natural atoms

Autor: Akopian, N., Trotta, R., Zallo, E., Kumar, S., Atkinson, P., Rastelli, A., Schmidt, O. G., Zwiller, V.

Single-photon sources that emit photons at the same energy play a key role in the emerging concepts of quantum information, such as entanglement swapping, quantum teleportation and quantum networks. They can be realized in a variety of systems, where

Externí odkaz: http://arxiv.org/abs/1302.2005

Universal recovery of the bright-exciton level-degeneracy in quantum dots without structural symmetry

Autor: Trotta, R., Zallo, E., Ortix, C., Atkinson, P., Plumhof, J. D., Brink, J. van den, Rastelli, A., Schmidt, O. G.

The lack of structural symmetry which usually characterizes semiconductor quantum dots lifts the energetic degeneracy of the bright excitonic states and hampers severely their use as high fidelity sources of entangled photons. We demonstrate experime

Externí odkaz: http://arxiv.org/abs/1206.1561

Increasing Optical Efficiency in the Telecommunication Bands of Strain-Engineered Ga (As,Bi) Alloys

Autor: Tisbi E., Placidi E., Magri R., Prosposito P., Francini R., Zaganelli A., Cecchi S., Zallo E., Calarco R., Luna E., Honolka J., Vondracek M., Colonna S., Arciprete F.

Publikováno v: Physical Review Applied 14 (2020). doi:10.1103/PhysRevApplied.14.014028
info:cnr-pdr/source/autori:Tisbi, E.; Placidi, E.; Magri, R.; Prosposito, P.; Francini, R.; Zaganelli, A.; Cecchi, S.; Zallo, E.; Calarco, R.; Luna, E.; Honolka, J.; Vondrá?ek, M.; Colonna, S.; Arciprete, F./titolo:Increasing Optical Efficiency in the Telecommunication Bands of Strain-Engineered Ga (As,Bi) Alloys/doi:10.1103%2FPhysRevApplied.14.014028/rivista:Physical Review Applied/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:14

The search for semiconducting materials with improved optical properties relies on the possibility to manipulate the semiconductors band structure by using quantum confinement, strain effects, and by the addition of diluted amounts of impurity elemen

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::487ecaf96007bfeac238ec1afaff856b

Electron-Microscopy Studies of the Structure of Thin Epitaxial Ge2Sb2Te5 Layers Grown on Si(111) Substrates.

Autor: Zaytseva, Yu. S., Borgardt, N. I., Prikhodko, A. S., Zallo, E., Calarco, R.

Publikováno v: Semiconductors; Dec2021, Vol. 55 Issue 13, p1033-1038, 6p