Zobrazeno 1 - 10
of 59
pro vyhledávání: '"Zakharchenya, B."'
Autor:
Koudinov, A. V., Averkiev, N. S., Kusrayev, Yu. G., Namozov, B. R., Zakharchenya, B. P., Wolverson, D., Davies, J. J., Wojtowicz, T., Karczewski, G., Kossut, J.
Publikováno v:
Phys. Rev. B 74, 195338 (2006)
The degree and orientation of the magnetic-field induced linear polarization of the photoluminescence from a wide range of heterostructures containing (Cd,Mn)Te quantum wells between (Cd,Mn,Mg)Te barriers has been studied as a function of detection p
Externí odkaz:
http://arxiv.org/abs/cond-mat/0601204
Autor:
Korenev, V. L., Zakharchenya, B. P.
Publikováno v:
Physics Uspekhi, v48, n. 6, pp. 603-608 (2005)
Vision of ferromagnet/semiconductor hybrid as a strongly coupled but flexible spin system is presented. We analyze the experiments and argue that contrary to the common sense the nonmagnetic semiconductor plays a crucial role in manipulating of ferro
Externí odkaz:
http://arxiv.org/abs/cond-mat/0412054
Autor:
Dzhioev, R. I., Kavokin, K. V., Korenev, V. L., Lazarev, M. V., Poletaev, N. K., Zakharchenya, B. P., Stinaff, E. A., Gammon, D., Bracker, A. S., Ware, M. E.
We report a large and unexpected suppression of the free electron spin relaxation in lightly-doped n-GaAs bulk crystals. The spin relaxation rate shows weak mobility dependence and saturates at a level 30 times less then that predicted by the Dyakono
Externí odkaz:
http://arxiv.org/abs/cond-mat/0407133
Autor:
Dzhioev, R. I., Kavokin, K. V., Korenev, V. L., Lazarev, M. V., Meltser, B. Ya., Stepanova, M. N., Zakharchenya, B. P., Gammon, D., Katzer, D. S.
Low-temperature electron spin relaxation is studied by the optical orientation method in bulk n-GaAs with donor concentrations from 10^14 cm^{-3} to 5x10^17 cm^{-3}. A peculiarity related to the metal-to-insulator transition (MIT) is observed in the
Externí odkaz:
http://arxiv.org/abs/cond-mat/0208083
Autor:
Dzhioev, R. I., Korenev, V. L., Merkulov, I. A., Zakharchenya, B. P., Gammon, D., Efros, Al. L., Katzer, D. S.
Publikováno v:
Physical Review Letters v.88, p.256801 (2002)
We report on the optical manipulation of the electron spin relaxation time in a GaAs based heterostructure. Experimental and theoretical study shows that the average electron spin relaxes through hyperfine interaction with the lattice nuclei, and tha
Externí odkaz:
http://arxiv.org/abs/cond-mat/0205352
Publikováno v:
JETP Letters. 8/10/2001, Vol. 74 Issue 3, p182. 4p.
Autor:
Zakharchenya, B. P., Sapega, V. F.
Publikováno v:
JETP Letters. 7/10/2001, Vol. 74 Issue 1, p32. 4p.
Autor:
Gusev, O.B., Prineas, J.P., Lindmark, E. K., Bresler, M. S., Khitrova, G., Gibbs, H. M., Yassievich, I. N., Zakharchenya, B. P., Masterov, V. F.
Publikováno v:
Journal of Applied Physics; 8/15/1997, Vol. 82 Issue 4, p1815, 9p, 3 Diagrams, 1 Chart, 19 Graphs
Autor:
Dzhioev, R. I., Zakharchenya, B. P., Korenev, V. L., Pak, P. E., Tkachuk, M. N., Vinokurov, D. A., Tarasov, I. S.
Publikováno v:
JETP Letters. 11/10/98, Vol. 68 Issue 9, p745. 5p.
Publikováno v:
JETP Letters. 3/10/98, Vol. 67 Issue 5, p352. 6p.