Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Zaixin Xie"'
Publikováno v:
Molecules, Vol 29, Iss 3, p 706 (2024)
Aluminum (Al) placed in hot water (HW) at 90 °C is roughened due to its reaction with water, forming Al hydroxide and Al oxide, as well as releasing hydrogen gas. The roughened surface is thus hydrophilic and possesses a hugely increased surface are
Externí odkaz:
https://doaj.org/article/70c81c7df41b4822b32b5857dceda853
Publikováno v:
Heritage Science, Vol 9, Iss 1, Pp 1-13 (2021)
Abstract Most heritage buildings and monuments are constructed out of natural stones which suffer irrevocable degradation when undergoing wet weathering, bowing, and dissolution in outdoor conditions. Self-cleaning treatments are effective for stone
Externí odkaz:
https://doaj.org/article/5c5b0efbf10f4e0a968c8e42bf5402b9
Publikováno v:
Applied Sciences, Vol 12, Iss 9, p 4771 (2022)
Heritage buildings and monuments are mostly made from natural stone, which undergoes irreversible decay under outdoor conditions. The main reason for the contamination, degradation, and cracking of natural stones is water and oil permeation. Hence, m
Externí odkaz:
https://doaj.org/article/2fedc3bac2b740f596f3037a80adf08f
Publikováno v:
Materials Research Express, Vol 9, Iss 3, p 035902 (2022)
Cu _2 O has the advantages of low price, stable chemical properties, and high visible light absorption rate. It is a very promising hole transport material in solar cells. However, the pure phase Cu _2 O has a low hole transport rate, which can be im
Externí odkaz:
https://doaj.org/article/53c87cbbea4546c284a117c6342fc259
Autor:
Liang Luo, Bao Zhou, Zhenzhen Liu, Qirong Zhao, Chao Wang, Zhuoqi Duan, Zaixin Xie, Xiaobo Yang, Yongmao Hu
Publikováno v:
RSC Advances. 13:8476-8486
The optical and electrical properties of Se/Te-doped Cu2O were analyzed by first-principles and experimental characterization, and its simulation as a PSC was completed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e5a7f8abbbc8a89c30b96cc0f2620ca
https://doi.org/10.1039/d2ra04659h
https://doi.org/10.1039/d2ra04659h
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:16955-16966
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5896e2d00d8db10d1395e027ebfc117
https://doi.org/10.1007/s10854-022-08574-2
https://doi.org/10.1007/s10854-022-08574-2