Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Zairui Li"'
Autor:
Jay Mathews, Zairui Li
Publikováno v:
2022 IEEE Photonics Society Summer Topicals Meeting Series (SUM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1537e083d2390b8bb96ff7ef9630e13
https://doi.org/10.1109/sum53465.2022.9858207
https://doi.org/10.1109/sum53465.2022.9858207
Object detection is one of the fundamental tasks in computer vision. Although excellent progress has been made, there still exist challenges for objects with dense distribution, fuzzy feature, and small size. This paper presents a detector for object
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::529950bf304a57602c88255e71365b04
https://doi.org/10.21203/rs.3.rs-1516274/v1
https://doi.org/10.21203/rs.3.rs-1516274/v1
Autor:
Chiao Chang, Hung-Hsiang Cheng, Gary A. Sevison, Joshua R. Hendrickson, Zairui Li, Imad Agha, Jay Mathews, Richard A. Soref, Greg Sun
Publikováno v:
Materials, Vol 15, Iss 989, p 989 (2022)
Materials; Volume 15; Issue 3; Pages: 989
Materials; Volume 15; Issue 3; Pages: 989
We report an investigation on the photo-response from a GeSn-based photodetector using a tunable laser with a range of incident light power. An exponential increase in photocurrent and an exponential decay of responsivity with increase in incident op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9c9d6180b3c6c0650a790834842166d7
https://pubmed.ncbi.nlm.nih.gov/35160939
https://pubmed.ncbi.nlm.nih.gov/35160939
Autor:
David Lombardo, Jay Mathews, Yun Zhao, John Kouvetakis, Imad Agha, Zairui Li, James Gallagher, Jose Menendez
Publikováno v:
2018 IEEE Photonics Society Summer Topical Meeting Series (SUM).
Room temperature amplified spontaneous emission at mid-IR has been observed from optically pumped GeSn waveguides on Si. For higher pump power, emission spectrum indicates the direct band to indirect band emission intensity ratio increases and the pe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3ec0c727729a666b4ca18a2c6ef7743
https://doi.org/10.1109/phosst.2018.8456690
https://doi.org/10.1109/phosst.2018.8456690
Autor:
Zairui Li, Jay Mathews, Yun Zhao, James Dennis Gallagher, David Lombardo, Imad Agha, John Kouvetakis, Jose Menendez
Publikováno v:
ECS Meeting Abstracts. :1034-1034
The successful epitaxial growth of Ge-on-Si has opened a new gateway for Si-based laser research. Ge is not a direct band gap material, however it possible to induce Ge towards direct band emission due to the small band gap energy differences between
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d33e1070db558c94c0606613e484a933
https://doi.org/10.1149/ma2018-02/31/1034
https://doi.org/10.1149/ma2018-02/31/1034
Publikováno v:
ECS Meeting Abstracts. :1932-1932
The search for Si-based lasers has been ongoing for many years. GeSn alloys represent a possible solution to this problem due to their unique band structure. Pure Ge is an indirect band gap semiconductor, but the difference between the conduction ban
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a9246ac84f1e76c25794dae875abecd8
https://doi.org/10.1149/ma2016-02/30/1932
https://doi.org/10.1149/ma2016-02/30/1932
Publikováno v:
ECS Meeting Abstracts. :1227-1227
The development of Si-based lasers has been a goal of the photonics industry for many years. A number of methods have been explored for achieving lasers on Si platforms, and a few attempts, such as the Si Raman laser, have achieved marginal success,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89fd349c20c3bb71d88f861d99b43c24
https://doi.org/10.1149/ma2015-02/33/1227
https://doi.org/10.1149/ma2015-02/33/1227