Zobrazeno 1 - 10
of 583
pro vyhledávání: '"Zainuriah Hassan"'
Publikováno v:
Journal of Materials Research and Technology, Vol 22, Iss , Pp 795-810 (2023)
Different post-deposition annealing temperatures were carried out in argon ambient to investigate the corresponding effects onto structural, morphological, optical, and electrical characteristics of RF magnetron sputtered gallium oxide (Ga2O3) films.
Externí odkaz:
https://doaj.org/article/1dc5ca7cb14e47149b066211e3fecfea
Publikováno v:
Materials Research Express, Vol 11, Iss 6, p 062003 (2024)
In this review, an introduction to nanostructured films focusing on cerium oxide (CeO _2 ) as high dielectric constant ( k ) material for silicon-based metal-oxide-semiconductor devices, and subsequently background of using low k silicon dioxide as w
Externí odkaz:
https://doaj.org/article/ee4ef46de94d4fa382ccda54d937900f
Publikováno v:
Journal of Materials Research and Technology, Vol 16, Iss , Pp 139-151 (2022)
Structural, morphological, optical, and electrical characteristics of polycrystalline gallium oxide (Ga2O3) films subjected to different post-deposition annealing temperatures (400–1000 °C) in a stagnant oxygen stream ambient were systematically s
Externí odkaz:
https://doaj.org/article/52d20e8a8ab1494399c61fb8ce6e04fe
Publikováno v:
ACS Omega, Vol 5, Iss 41, Pp 26347-26356 (2020)
Externí odkaz:
https://doaj.org/article/d23e951f13ca4a849d9b567c23af6b76
Autor:
Hock Jin Quah, Way Foong Lim, Zainuriah Hassan, Rosfariza Radzali, Norzaini Zainal, Fong Kwong Yam
Publikováno v:
Arabian Journal of Chemistry, Vol 12, Iss 8, Pp 3417-3430 (2019)
Effects of ultraviolet-assisted photo-electrochemical (PEC) etching current densities (J = 20, 40, 80, and 160 mA/cm2) towards structural, physical, and optical properties of aluminium indium gallium nitride (AlInGaN) semiconductors as well as corres
Externí odkaz:
https://doaj.org/article/baad4393f3a842989df92386dbb0fd0c
Publikováno v:
Journal of Materials Research and Technology, Vol 8, Iss 3, Pp 2767-2776 (2019)
The formation of nano-dendritic like structure and nano-spikes in AlInGaN films via ultraviolet-assisted photoelectrochemical (PEC) etching at different current densities (5, 20, and 40 mA/cm2) could be potentially deployed as the hydrogen sensor. Th
Externí odkaz:
https://doaj.org/article/c81672bf4d9a417ca234b1077608f04e
Autor:
Ho Xin Jing, Che Azurahanim Che Abdullah, Mohd Zaki Mohd Yusoff, Azzafeerah Mahyuddin, Zainuriah Hassan
Publikováno v:
Results in Physics, Vol 12, Iss , Pp 1177-1181 (2019)
In this study, the Aluminium Nitride/Gallium Nitride (AlN/GaN) layers and Aluminium Nitride/Aluminium Gallium Nitride/Gallium Nitride (AlN/AlGaN/GaN) layer heterostructures were successfully created using technique known as plasma-assisted molecular
Externí odkaz:
https://doaj.org/article/e0f19f2bcbb947abb33f1740cf072f03
Autor:
Furqan Khairi Mohammed, Khi Poay Beh, Asmiet Ramizy, Naser M. Ahmed, Fong Kwong Yam, Zainuriah Hassan
Publikováno v:
Applied Sciences, Vol 11, Iss 22, p 10833 (2021)
This work presents the role of graphene in improving the performance of a porous GaN-based UV photodetector. The porous GaN-based photodetector, with a mean pore diameter of 35 nm, possessed higher UV sensitivity, about 95% better compared to that of
Externí odkaz:
https://doaj.org/article/8040b18585574615818da0db586e596e
Publikováno v:
PLoS ONE, Vol 9, Iss 1, p e86544 (2014)
The current-voltage characteristics of Ni contacts with the surfaces of ZnO thin films as well as single crystal (0001) ZnO substrate are investigated. The ZnO thin film shows a conversion from Ohmic to rectifying behavior when annealed at 800°C. Si
Externí odkaz:
https://doaj.org/article/88743e1834be44968cd66ca15a43f056
Publikováno v:
PLoS ONE, Vol 9, Iss 2, p e89348 (2014)
The concentration of acceptor carriers, depletion width, magnitude of donor level movement as well as the sensitivity factor are determined from the UV response of a heterojunction consisting of ZnO on type IIb diamond. From the comparison of the I-V
Externí odkaz:
https://doaj.org/article/fa80324346a34cb896e99880da002f22