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pro vyhledávání: '"Zaid Alemoush"'
Publikováno v:
Crystals, Vol 13, Iss 9, p 1319 (2023)
Hexagonal BN (h-BN) has emerged as an important ultrawide bandgap (UWBG) semiconductor (Eg~6 eV). The crystal growth technologies for producing semi-bulk crystals/epilayers in large wafer sizes and understanding of defect properties lag decades behin
Externí odkaz:
https://doaj.org/article/467d420d02d14507a4eabfddc74e93f1
