Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Zai-Yu Zhang"'
Autor:
Jian-jun, Yang, Shi-yang, Yin, Cai-he, Fan, Ling, Ou, Jia-hu, Wang, Hai, Peng, Bo-wen, Wang, Deng, Luo, Shi-yun, Dong, Zai-yu, Zhang
Publikováno v:
In Surface & Coatings Technology 15 March 2024 479
In this work,we report on a novel in-situ TiC nanoparticles sticking to graphene nanoplatelets(TiC@GNPs)reinforced titanium matrix composites. In-situ TiC nanoparticles are produced in both mechanical ball milling and sintering processes.Ultrafine co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a54e15652d2540f50e86c406760882f0
https://doi.org/10.21203/rs.3.rs-2092809/v1
https://doi.org/10.21203/rs.3.rs-2092809/v1
Publikováno v:
Materials; Volume 15; Issue 11; Pages: 3790
Using high-strength steel (yield strength fy ≥ 460 MPa) in concrete-filled steel tubes is expected to provide a superior bearing capacity by achieving light weight and efficient construction, but the existing design limitation on diameter-to-thickn
Publikováno v:
Science of Advanced Materials. 12:296-303
A lightweight titanium matrix composite material was fabricated by vacuum sintering using semi-powder metallurgy. The graphene nanoplatelets (GNPs) were used as a reinforcement for the titanium matrix composites. Fabricating the composite materials u
Publikováno v:
Current medical science. 40(4)
Studies have shown that periodontal pathogens can enter the bloodstream, causing a series of reactions that can lead to a variety of systemic diseases. Epidemiological investigations also found a tight correlation between periodontitis (PD) and osteo
Publikováno v:
Advanced Materials Research. 988:130-133
CoSiN film can be used as diffusion barrier layer in ULSI-Cumetallization.CoSiN/Cu/CoSiN/SiO2/Si films are prepared by magnetron sputtering technology. Four-point-probe, SGC-10,Atomic forced microscopy (AFM) are used to detect the resistivity,film th
Publikováno v:
Advanced Materials Research. :208-211
In this paper, the SiN film was deposited on Si wafer, and the deposition rate of the SiN film was discussed with different parameters such as the sputtering power, deposition temperature, deposition pressure and ratio of N2/(N2+Ar). The result showe
Publikováno v:
Applied Mechanics and Materials. :1658-1661
In the work, the resistivity of the SiN film was discussed, the resistivity of the SiN film was influenced by the deposition parameters, such as the sputtering power, deposition temperature, N2 pressure and ratio of N2/(N2+Ar). Only considering the r