Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Zahra Jahanshah Rad"'
Autor:
Mikhail Kuzmin, Juha-Pekka Lehtiö, Zahra Jahanshah Rad, Svetlana V. Sorokina, Marko P. J. Punkkinen, Hannu-Pekka Hedman, Risto Punkkinen, Pekka Laukkanen, Kalevi Kokko
Publikováno v:
ACS Materials Au, Vol 2, Iss 2, Pp 204-214 (2021)
Externí odkaz:
https://doaj.org/article/f63dccdced084190a21772491368fcdc
Autor:
Joonas Isometsä, Zahra Jahanshah Rad, Tsun H. Fung, Hanchen Liu, Juha-Pekka Lehtiö, Toni P. Pasanen, Oskari Leiviskä, Mikko Miettinen, Pekka Laukkanen, Kalevi Kokko, Hele Savin, Ville Vähänissi
Publikováno v:
Crystals, Vol 13, Iss 4, p 667 (2023)
Germanium is an excellent material candidate for various applications, such as field effect transistors and radiation detectors/multijunction solar cells, due to its high carrier mobilities and narrow bandgap, respectively. However, the efficient pas
Externí odkaz:
https://doaj.org/article/8eee7eeb28bc4cb79d51591e4741e569
Autor:
Juha-Pekka Lehtiö, Zahra Jahanshah Rad, Marko Punkkinen, Risto Punkkinen, Mikhail Kuzmin, Pekka Laukkanen, Kalevi Kokko
Publikováno v:
Physical Review Materials. 6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bee207bdb7a276145a7fcf1a74a4be27
https://doi.org/10.1103/physrevmaterials.6.094604
https://doi.org/10.1103/physrevmaterials.6.094604
Autor:
Zahra Jahanshah Rad, Juha-Pekka Lehtiö, Kexun Chen, Iris Mack, Ville Vähänissi, Mikko Miettinen, Marko Punkkinen, Risto Punkkinen, Petri Suomalainen, Hannu-Pekka Hedman, Mikhail Kuzmin, Jekaterina Kozlova, Mihkel Rähn, Aile Tamm, Hele Savin, Pekka Laukkanen, Kalevi Kokko
Publikováno v:
Vacuum. 202:111134
Growing SiO2 layer by wet-chemical oxidation of Si surfaces before growth of another insulating film(s) is a used method to passivate Si interfaces in applications (e.g., solar cell, photodiode) at low temperatures (LT) below 450 oC. We report on pot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ec6bb7dc5729876a5bfe3d6125f61d01
https://doi.org/10.1016/j.vacuum.2022.111134
https://doi.org/10.1016/j.vacuum.2022.111134
Autor:
S. V. Sorokina, Pekka Laukkanen, Mikhail Kuzmin, Matti Punkkinen, Zahra Jahanshah Rad, Juha-Pekka Lehtiö, Kalevi Kokko
Publikováno v:
Physical Review B. 103
The close similarity of silicon and germanium, isoelectronic group-IV elements, makes the integration of Ge layers on Si substrates suitable for technology development, but the atomic and electronic structures of ${\mathrm{Si}}_{1\ensuremath{-}x}{\ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a442a98b0cc18d4b9398fbb4726994b8
https://doi.org/10.1103/physrevb.103.195312
https://doi.org/10.1103/physrevb.103.195312
Autor:
Pekka Laukkanen, Marko Patrick John Punkkinen, Kalevi Kokko, Ismo T.S. Rauha, Juha-Pekka Lehtiö, Hannu-Pekka Hedman, S. Granroth, Hele Savin, Muhammad Yasir, Risto Punkkinen, Zahra Jahanshah Rad, Jean-Pascal Rueff
Publikováno v:
Advanced Electronic Materials
Advanced Electronic Materials, Wiley, In press, ⟨10.1002/aelm.202100034⟩
Advanced Electronic Materials, Wiley, In press, ⟨10.1002/aelm.202100034⟩
Lataa OA-julkaisu, kun saatavilla. Abstract Negative static charge and induced internal electric field have often been observed in the interfaces between silicon and high-? dielectrics, for example Al2O3 and HfO2. The electric field provides either b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::529adecb4c4003abc4e8abccb4b6958d
https://hal.sorbonne-universite.fr/hal-03180431
https://hal.sorbonne-universite.fr/hal-03180431
Autor:
Pekka Laukkanen, Marko Patrick John Punkkinen, Zahra Jahanshah Rad, Mikhail Kuzmin, Iris Mack, Ville Vähänissi, Andrei Pavlov, Kalevi Kokko, Kexun Chen, Hele Savin, Hannu-Pekka Hedman, Kawa Rosta, Juha-Pekka Lehtiö, Risto Punkkinen
Publikováno v:
ACS applied materialsinterfaces. 12(41)
Low-temperature (LT) passivation methods ( 700oC). Therefore, the LT passivation of SiOx/Si has been, since long, a research topic to improve applications performance. Here, we demonstrate that a LT (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f1bd689741d0a922fb03bee001692365
https://pubmed.ncbi.nlm.nih.gov/32960564
https://pubmed.ncbi.nlm.nih.gov/32960564
Autor:
Pekka Laukkanen, Juha-Pekka Lehtiö, Ville Vähänissi, Zahra Jahanshah Rad, Kexun Chen, Hele Savin, Marko Yli-Koski
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
Silicon solar cells are known to suffer from poor UV response because of high reflectance combined with recombination at the front side of the cell - including heavily doped emitter. While black silicon (b-Si) has proven to be excellent technology to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a2eea661f4a062122f8a3a6053c6e92
https://doi.org/10.1109/pvsc45281.2020.9300686
https://doi.org/10.1109/pvsc45281.2020.9300686
Autor:
Mikhail Kuzmin, A. Lahti, Zahra Jahanshah Rad, Pekka Laukkanen, Juha-Pekka Lehtiö, Matti Punkkinen, J. Huhtala, Kalevi Kokko
Publikováno v:
Applied Surface Science. 567:150848
III-V semiconductor - oxide interfaces have attracted huge interest due to their substantial potential in electronic applications. However, due to the extreme complexity of the modeling of the interfaces, there are only few ab initio studies of these
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79ba6609263111d1e0f92c98a31a5e81
https://doi.org/10.1016/j.apsusc.2021.150848
https://doi.org/10.1016/j.apsusc.2021.150848
Autor:
Marko Patrick John Punkkinen, Juha-Pekka Lehtiö, Zahra Jahanshah Rad, Pekka Laukkanen, Mikhail Kuzmin, Kalevi Kokko, A. Lahti, Risto Punkkinen
Publikováno v:
ECS Meeting Abstracts. :954-954
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::138e5d7585e1812e4e2d3cdeef3c964a
https://doi.org/10.1149/ma2021-0232954mtgabs
https://doi.org/10.1149/ma2021-0232954mtgabs