Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Zahit Evren Kaya"'
Autor:
Zahit Evren Kaya, Christian Wenger, Ozgur Yavuzcetin, Seref Kalem, Saffet Yildirim, S.B. Tekin, Robin Roelofs, Eric Jalaguier
Publikováno v:
Oxide-based Materials and Devices XII.
This paper presents recent progress in resistive oxide memories and their integration into advanced embedded nonvolatile memory technology nodes. With the downscaling trends in emerging semiconductor manufacturing and novel user needs such as higher
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67647346eb25cd9864d391e9f1ce1b06
https://doi.org/10.1117/12.2585681
https://doi.org/10.1117/12.2585681
Autor:
Etienne Nowak, J. Garrione, Hatun Cinkaya, Guillaume Bourgeois, Adil Ozturk, Marie Claire Cyrille, Gabriele Navarro, Nicolas Guillaume, Arif Sirri Atilla Hasekioglu, Zahit Evren Kaya, Seref Kalem, Christelle Charpin-Nicolle
Publikováno v:
Solid-State Electronics
In this work, we have investigated the structural properties of Germanium (Ge)-Antimony (Sb)-Tellurium (Te) (GST) and Ge-rich GST thin film samples. The structural properties of the films are studied after annealing temperatures from room temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fda486403a989dc5fdd44f9ae58f26a3
Autor:
Arif Sirri Atilla Hasekioglu, Gabriele Navarro, Hatun Cinkaya, Marie Claire Cyrille, Guillaume Bourgeois, Zahit Evren Kaya, Nicolas Guillaume, Christelle Charpin-Nicolle, Etienne Nowak, Seref Kalem, J. Garrione
Publikováno v:
2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).
In the present study the structural properties of Germanium (Ge)-Antimony (Sb)-Tellurium (Te) (GST) and Ge-rich GST thin film samples are investigated after annealing temperatures ranging from room temperature up to 450°C. We performed the annealing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82509c3c3b6c437ff185ad2177a2a990
https://doi.org/10.1109/eurosoi-ulis49407.2020.9365326
https://doi.org/10.1109/eurosoi-ulis49407.2020.9365326
Autor:
Atila Yilmaz, Zahit Evren Kaya
Background and Objective Kinematic and dynamic modeling of any physical process is critical especially for the design phase of associated control units and the prediction of their performance levels. In this paper, a dynamical model and a development
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8012df86e4de0772c8502713d69bb127
https://aperta.ulakbim.gov.tr/record/91423
https://aperta.ulakbim.gov.tr/record/91423
Autor:
Zahit Evren Kaya, Salih Ergun
Publikováno v:
APCCAS
We present the design of a chaos based Truly Random Number Generator (TRNG) which benefits from the advantages introduced by deep submicron FD-SOI technology. Proposed design is simulated using Cadence IC Design tools and GLOBALFOUNDRIES 22FDX proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eed939691efe846d836b39cf458e756a
https://doi.org/10.1109/apccas.2018.8605666
https://doi.org/10.1109/apccas.2018.8605666
Publikováno v:
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).
Today, users of existing commercial products expect longer battery life from the electronic products that they use in their daily activities. In addition to this, emerging technologies, especially in the Internet-of-Things domain require very long ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5143d5cdd62c40174478bef97193a780
https://doi.org/10.1109/ulis.2018.8354748
https://doi.org/10.1109/ulis.2018.8354748
Publikováno v:
ICIT
Flash memory has been the dominant technology in non-volatile memory market for the last couple of decades. Along with down-scaling in the CMOS manufacturing process, industry and academia started to evaluate the use of alternative memory cell archit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e32f9e5547230d4f46cc3a737cc37f7b
https://aperta.ulakbim.gov.tr/record/92999
https://aperta.ulakbim.gov.tr/record/92999
Publikováno v:
2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).
We review the results of silicon measurements, which we have performed on suboxide SiO x formed on n and p type Si wafers with different surface textures. Localized vibrational modes through Raman and FTIR, light emission properties by photoluminesce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b580dd6de2aaa2141bcb1faaee5ea980
https://doi.org/10.1109/ulis.2017.7962571
https://doi.org/10.1109/ulis.2017.7962571