Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Zahi Essa"'
Autor:
A. Pakfar, P. Boulenc, Fuccio Cristiano, Francois Wacquant, Christoph Zechner, Pierre Morin, B. Pelletier, Zahi Essa, Clement Tavernier, Marc Juhel, Jean-Luc Autran
Publikováno v:
Solid-State Electronics
Solid-State Electronics, Elsevier, 2016, 126, pp.163-169. ⟨10.1016/j.sse.2016.08.002⟩
Solid-State Electronics, Elsevier, 2016, 126, pp.163-169. 〈10.1016/j.sse.2016.08.002〉
Solid-State Electronics, 2016, 126, pp.163-169. ⟨10.1016/j.sse.2016.08.002⟩
Solid-State Electronics, Elsevier, 2016, 126, pp.163-169. ⟨10.1016/j.sse.2016.08.002⟩
Solid-State Electronics, Elsevier, 2016, 126, pp.163-169. 〈10.1016/j.sse.2016.08.002〉
Solid-State Electronics, 2016, 126, pp.163-169. ⟨10.1016/j.sse.2016.08.002⟩
International audience; The presence of capping materials during annealing (activation for example) can substantially impact the silicon junction profiles of Complementary Metal Oxide Semiconductor Field Effect Transistors (CMOSFET), depending on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e6430cd05694af5e9094890205117ccb
https://doi.org/10.1016/j.sse.2016.08.002
https://doi.org/10.1016/j.sse.2016.08.002
Publikováno v:
EPJ Photovoltaics, Vol 9, p 5 (2018)
In crystalline silicon solar cells, the front surface is textured in order to lower the reflection of the incident light and increase the efficiency of the cell. This texturing whose dimensions are a few micrometers wide and high, often makes it diff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7e29b6b82dccca9118e46c248c6bcb19
https://doaj.org/article/b374ac1950974080a9a9d0e3b21f20aa
https://doaj.org/article/b374ac1950974080a9a9d0e3b21f20aa
Publikováno v:
physica status solidi c. 11:146-149
In this work we present the analysis of small interstitial clusters (ICs) introduced in p-type Si after ion implantation using deep level transient spectroscopy (DLTS) and photoluminescence. Silicon ions with energy 380 keV and fluence of 1.0 x 1012
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9fcff1579fc20d66d53abc0eb58b3eb
https://doi.org/10.1002/pssc.201300204
https://doi.org/10.1002/pssc.201300204
Autor:
N. Taleb, Zahi Essa, P. Boulenc, Y. Qiu, V. Mortet, M. Quillec, Clement Tavernier, Frank Torregrosa, Yohann Spiegel, Filadelfo Cristiano, Eléna Bedel-Pereira, Alexander Burenkov, Nikolas Zographos, M. Hackenberg
Publikováno v:
physica status solidi c. 11:117-120
BF3 plasma immersion ion implantation (PIII) is a promising technique in the race for highly boron doped P+/N ultra-shallow junctions (USJs) in complementary metal oxide semiconductor (CMOS) silicon technologies. Implantation conditions used in BF3 P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3aa76052b06905771d0dd50eb6e840c4
https://doi.org/10.1002/pssc.201300165
https://doi.org/10.1002/pssc.201300165
Autor:
Karim Huet, Qui Yang, Lourdes Pelaz, Eléna Bedel-Pereira, Pedro López, Antonino La Magna, Filadelfo Cristiano, María Aboy, M. Italia, M. Quillec, Giuseppe Fisicaro, Zahi Essa
Publikováno v:
Applied Physics Express
Applied Physics Express, IOPScience-Japan Society of Applied Physics, 2014, 7 (2), pp.021301. ⟨10.7567/apex.7.021301⟩
UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname
Applied Physics Express, 2014, 7 (2), pp.021301. ⟨10.7567/apex.7.021301⟩
Applied Physics Express, IOPScience-Japan Society of Applied Physics, 2014, 7 (2), pp.021301. ⟨10.7567/apex.7.021301⟩
UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname
Applied Physics Express, 2014, 7 (2), pp.021301. ⟨10.7567/apex.7.021301⟩
Producción Científica
We investigate the correlation between dopant activation and damage evolution in boron-implanted silicon under excimer laser irradiation. The dopant activation efficiency in the solid phase was measured under a wide range
We investigate the correlation between dopant activation and damage evolution in boron-implanted silicon under excimer laser irradiation. The dopant activation efficiency in the solid phase was measured under a wide range
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1575fb7a652f617f48a8ca9820c142ab
https://hal.archives-ouvertes.fr/hal-01921825
https://hal.archives-ouvertes.fr/hal-01921825
Autor:
Karim Huet, Peter Pichler, Filadelfo Cristiano, M. Italia, M. Hackenberg, Q. Yang, María Aboy, Lourdes Pelaz, Eléna Bedel-Pereira, N. Taleb, Giuseppe Fisicaro, M. Quillec, A. La Magna, Zahi Essa, Pedro López
Publikováno v:
2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
Defect evolution and dopant dynamics in boron implanted silicon under excimer laser irradiation is investigated by means of continuous model and kinetic Monte Carlo (KMC) simulations. Both approaches rule the post-implant kinetics of the defects-dopa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3b111f6c44cb68332f2ed68641523ff
https://doi.org/10.1109/sispad.2013.6650567
https://doi.org/10.1109/sispad.2013.6650567
Autor:
Peter Pichler, M. Gro-Jean, Zahi Essa, Clement Tavernier, S. Baudot, Sylvie Schamm-Chardon, M. Hackenberg
Publikováno v:
Microelectronic Engineering
Microelectronic Engineering, 2013, 109, pp.200-203. ⟨10.1016/j.mee.2013.03.071⟩
Microelectronic Engineering, Elsevier, 2013, 109, pp.200-203. ⟨10.1016/j.mee.2013.03.071⟩
Microelectronic Engineering, 2013, 109, pp.200-203. ⟨10.1016/j.mee.2013.03.071⟩
Microelectronic Engineering, Elsevier, 2013, 109, pp.200-203. ⟨10.1016/j.mee.2013.03.071⟩
TiN/HfSiON/SiO2/Substrate stacks were investigated with C-V measurements and SIMS.No linear relationship of the threshold voltage on the La concentration at the HfSiON/SiO2 was found.A linear relationship of the threshold voltage on the La sheet conc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::60edd0953a78ffcb070cc8f4cb0bb490
https://hal.science/hal-01745012
https://hal.science/hal-01745012
Autor:
Cloud Nyamhere, Zahi Essa, F. Olivie, Y. Yamamoto, Eléna Bedel-Pereira, Filadelfo Cristiano, J. Boucher, D. Bolze
A special fabrication process involving chemical vapor deposition (CVD) was designed in order to fabricate advanced structures used to successfully investigate both deep level transient spectroscopy (DLTS) and leakage currents related to the defects
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eb71ada09305c810771db733a58a0f50