Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Zaheed Karim"'
Publikováno v:
Applied Physics Letters. 70:2793-2795
We demonstrate a high-quality double-layer antireflection coating for high index (n=2.61 at 514 nm) photorefractive and electro-optic bismuth silicon oxide (Bi12SiO20) crystals. The antireflection coating comprises two electron-beam-deposited quarter
Autor:
Anupam Madhukar, Chris Kyriakakis, Kezhong Hu, Li Chen, K. C. Rajkumar, Zaheed Karim, R. Kapre, Armand R. Tanguay
Publikováno v:
LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics.
Autor:
Zaheed Karim, R. F. Cartland, Anupam Madhukar, Armand R. Tanguay, Li Chen, Chris Kyriakakis, Kezhong Hu
Publikováno v:
Applied Physics Letters. 66:2774-2776
A novel method is demonstrated for the correction of cavity thickness deviations imposed by technological limitations in the growth process of a resonant cavity spatial light modulator. This method is based on cavity phase compensation through the us
Publikováno v:
Applied Physics Letters. 64:2913-2915
The wavelength dispersion of the phase shift on reflection that is inherent in dielectric Bragg mirrors can be used to phase compensate resonant‐cavity‐based devices such as multiple quantum well asymmetric Fabry–Perot spatial light modulators
Autor:
Li Chen, Anupam Madhukar, Ping Chen, Kezhong Hu, Armand R. Tanguay, Chris Kyriakakis, Zaheed Karim
Publikováno v:
Applied Physics Letters. 59:1664-1666
We report the realization of an inverted cavity (through‐substrate) reflection modulator based on an asymmetric Fabry–Perot configuration that utilizes the transparency of the GaAs substrate for operation at wavelengths appropriate for strained
Autor:
Anupam Madhukar, Kezhong Hu, K. Kaviani, Chris Kyriakakis, K. C. Rajkumar, Armand R. Tanguay, Ping Chen, Zaheed Karim, Li Chen
Publikováno v:
Applied Physics Letters. 59:1108-1110
We report the realization of both high contrast ratio (66:1) and dynamic range (30%) at room temperature in a strained GaAs/InGaAs(100) multiple quantum well based asymmetric Fabry–Perot reflection modulator. The p‐i‐n configuration modulator a
Autor:
Armand R. Tanguay, Chris Kyriakakis, Zaheed Karim, Praveen Asthana, Edward J. Herbulock, Gregory P. Nordin
Publikováno v:
MRS Proceedings. 228
Photorefractive materials comprise an important category of electrooptic materials, and are important constituent elements in a wide range of devices designed specifically for use in optical information processing and computing systems. Critical issu
Autor:
Kezhong Hu, Ping Chen, Anupam Madhukar, Chris Kyriakakis, Li Chen, Zaheed Karim, Armand R. Tanguay
Publikováno v:
Applied Physics Letters. 59:3660-3660
Publikováno v:
Annual Meeting Optical Society of America.
The integrated optical synthetic aperture radar (IOSAR) processor is one of a number of potentially powerful optical signal processing components that combine many of the throughput characteristics of bulk optical processors with the cost, size, and
Publikováno v:
Annual Meeting Optical Society of America.
Bismuth silicon oxide is a high-index (2.54 at 514 nm) electrooptic and photorefractive material used for optical information processing devices such as the Pockels readout optical modulator (PROM), the photorefractive incoherent-to-coherent optical