Zobrazeno 1 - 10
of 66
pro vyhledávání: '"Zachary Engel"'
Autor:
Pao-Chuan Shih, Girish Rughoobur, Zachary Engel, Habib Ahmad, William Alan Doolittle, Akintunde I. Akinwande, Tomas Palacios
Publikováno v:
IEEE Electron Device Letters. 43:1351-1354
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61ba4686180e1cb90f37ef49afcda2dc
https://doi.org/10.1109/led.2022.3184996
https://doi.org/10.1109/led.2022.3184996
Publikováno v:
IEEE Transactions on Electron Devices. 69:2566-2572
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e5fcb290d731c095a3157d89a40d3f9
https://doi.org/10.1109/ted.2022.3156951
https://doi.org/10.1109/ted.2022.3156951
Publikováno v:
Journal of Applied Physics. 131
Aluminum nitride (AlN) is an insulator that has shown little promise to be converted to a semiconductor via impurity doping. Some of the historic challenges for successfully doping AlN include a reconfigurable defect formation known as a DX center an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f783a9649395b8b3fa6d495cf6af9f5
https://doi.org/10.1063/5.0086314
https://doi.org/10.1063/5.0086314
Publikováno v:
Journal of Applied Physics. 132:185302
While metal-rich ScAlN epitaxy has traditionally led to mixed phase films by controlling the surface chemistry with transient metal doses utilizing a pulsed method of molecular beam epitaxy, phase-pure, metal-rich epitaxy of ScAlN was demonstrated, s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fddf1bbbd9ae42e1f69961a6f5591b9
https://doi.org/10.1063/5.0121621
https://doi.org/10.1063/5.0121621
Autor:
Christopher M. Matthews, Timothy M. McCrone, William A. Doolittle, Jeffrey Lindemuth, Zachary Engel, Habib Ahmad
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 33(42)
Beryllium has long been predicted by first principle theory as the best p-type dopant for GaN and AlN. But experimental validation of these theories has not, until now, borne out the original predictions. A key challenge is the dopant-induced strain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::363f67c16aaea6689cb134ed8b3ab94b
https://pubmed.ncbi.nlm.nih.gov/34476854
https://pubmed.ncbi.nlm.nih.gov/34476854
Autor:
Keisuke Motoki, Zachary Engel, Christopher M. Matthews, Habib Ahmad, Timothy M. McCrone, Kohei Harada, W. Alan Doolittle
Publikováno v:
Journal of Vacuum Science & Technology B. 40:052210
The structural quality of indium-rich Al0.3In0.7N grown by metal modulated epitaxy (MME), previously demonstrating x-ray diffraction (XRD) figures of merit ∼11 times better than the previous literature is investigated to explain the origin of such
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d068a4d3c3344134b32f8126711e60a7
https://doi.org/10.1116/6.0001974
https://doi.org/10.1116/6.0001974
Autor:
Keisuke Motoki, W. Alan Doolittle, Evan A. Clinton, Habib Ahmad, Christopher M. Matthews, Zachary Engel
Publikováno v:
ACS applied materialsinterfaces. 12(33)
While metal modulated epitaxy (MME) has been shown useful for hyperdoping, where hole concentrations 40 times higher than other techniques have been demonstrated, and the ability to control phase separation in immiscible III-nitrides, the complexity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d42a83d980471f14e15fd6d30a973a3f
https://pubmed.ncbi.nlm.nih.gov/32706570
https://pubmed.ncbi.nlm.nih.gov/32706570
Autor:
Renjiu Hu, Habib Ahmad, Christopher M. Matthews, Zhiting Tian, Tengfei Luo, W. Alan Doolittle, Jingjing Shi, Zhe Cheng, Tingyu Bai, Patrick E. Hopkins, Michael E. Liao, Mark S. Goorsky, Yekan Wang, Ruiyang Li, Evan A. Clinton, Yee Rui Koh, Eungkyu Lee, Zachary Engel, Luke Yates, Samuel Graham
Publikováno v:
Communications Physics, Vol 3, Iss 1, Pp 1-8 (2020)
A unified understanding of interfacial thermal transport is missing due to the complicated nature of interfaces which involves complex factors such as interfacial bonding, interfacial mixing, surface chemistry, crystal orientation, roughness, contami
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ff8f18769b466c1da44a91450ae6485b
https://doi.org/10.1038/s42005-020-0383-6
https://doi.org/10.1038/s42005-020-0383-6
Publikováno v:
Applied Physics Letters. 120:022101
Many advanced III-nitride devices, such as micro-LEDs, vertical FinFETs, and field emitters, require the fabrication of high aspect ratio vertical pillars or nanowires. Two-step etchings combining dry and wet etching steps have been used on vertical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b32af1cfeb7fe164b08fba5f484828f
https://doi.org/10.1063/5.0074443
https://doi.org/10.1063/5.0074443
Publikováno v:
Journal of Applied Physics. 130:195702
The recent achievement of p-type AlN films via Be doping was utilized to achieve novel heteroepitaxial diodes with Schottky, Pin, and junction barrier Schottky (JBS) electrical behavior. Although the heteroepitaxial structures were quasi-vertical, wh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfe10a76be81b649bdd00ed5058e329a
https://doi.org/10.1063/5.0069539
https://doi.org/10.1063/5.0069539