Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Zachary E. Fleetwood"'
Autor:
Nelson E. Lourenco, Zachary E. Fleetwood, George N. Tzintzarov, Mehmet Kaynak, Adrian Ildefonso, Stephen P. Buchner, John D. Cressler, Dale McMorrow, Jeffrey H. Warner, Ani Khachatrian
Publikováno v:
IEEE Transactions on Nuclear Science. 67:1521-1529
Low-noise amplifiers (LNAs) are necessary components for any communications system. Single-event transients (SETs) induced by energetic particles in space can corrupt the data in an RF receiver. Using p-n-p silicon–germanium (SiGe) heterojunction b
Autor:
J. P. Bonsall, Dale Brewe, Patrick S. Goley, John D. Cressler, Nelson E. Lourenco, Zachary E. Fleetwood, Delgermaa Nergui, Adrian Ildefonso, Anup P. Omprakash, George N. Tzintzarov, Hunter Kettering, Stephen LaLumondiere, Daniele M. Monahan
Publikováno v:
IEEE Transactions on Nuclear Science. 67:91-98
This article presents an experimental study of single-event transients (SETs) induced by pulsed X-rays in SiGe heterojunction bipolar transistors (HBTs). Device-level transient data and circuit-level upset data from pulsed X-rays are analyzed and com
Autor:
Ani Khachatrian, Delgermaa Nergui, Joseph Harms, Stephen P. Buchner, Joel M. Hales, George N. Tzintzarov, Zachary E. Fleetwood, Anna Erickson, Adrian Ildefonso, Milad Frounchi, Veronique Ferlet-Cavrois, Jeffrey H. Warner, John D. Cressler, Dale McMorrow, Kay Voss
Publikováno v:
IEEE Transactions on Nuclear Science. 66:359-367
An approach for determining the optimal laser parameters (i.e., pulse energy, focused spot size, wavelength, and pulse duration) for correlating single-event transients induced via two-photon absorption (TPA) and heavy ions is presented. The approach
Autor:
Nelson E. Lourenco, Anup P. Omprakash, Martin Mourigal, Jason Dark, John D. Cressler, Zachary E. Fleetwood, L. Ge, Dragomir Davidovic, Brian R. Wier, Hanbin Ying, Uppili S. Raghunathan
Publikováno v:
IEEE Transactions on Electron Devices. 65:3697-3703
This paper provides insight into the transport mechanisms of the collector current in SiGe HBTs operating at cryogenic temperatures and compares three technology generations of devices. Based on the experimental data, a method to differentiate direct
Autor:
Adrian Ildefonso, John D. Cressler, Ani Khachatrian, Joel M. Hales, Stephen P. Buchner, Nicolas J.-H. Roche, Zachary E. Fleetwood, Dale McMorrow, Jeffrey H. Warner, Veronique Ferlet-Cavrois
Publikováno v:
IEEE Transactions on Nuclear Science. 65:1724-1733
Using a laser-equivalent linear energy transfer (LET) approach, strong correlation is found for collected charge following heavy-ion and pulsed-laser excitation in a bulk diode device. By significantly modifying the size of the charge distribution ge
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 66:3866-3876
A 6-bit active digital step attenuator (DSA), which simultaneously achieves wide bandwidth, flat gain characteristics, and bidirectional operation, is proposed for wideband phased-array antennas. In addition, it supports bandwidth tuning and equaliza
Autor:
Michael A. Oakley, John D. Cressler, Alvin J. Joseph, Zachary E. Fleetwood, Vibhor Jain, Brian R. Wier, Uppili S. Raghunathan
Publikováno v:
IEEE Transactions on Electron Devices. 65:793-797
The implementation of a “superjunction” collector design in a silicon–germanium heterojunction bipolar transistor technology is explored for enhancing breakdown performance. The superjunction collector is formed via the placement of a series of
Autor:
Ickhyun Song, Vibhor Jain, Jeffrey H. Warner, Brian R. Wier, Dale McMorrow, Ani Khachatrian, Uppili S. Raghunathan, George N. Tzintzarov, Zachary E. Fleetwood, Moon-Kyu Cho, En Xia Zhang, Harold L. Hughes, Pauline Paki, Adrian Ildefonso, John D. Cressler, P.J. McMarr, Alvin J. Joseph, Mason T. Wachter, Delgermaa Nergui
Publikováno v:
IEEE Transactions on Nuclear Science. 65:399-406
The doping profile of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) is modified to enhance inverse-mode (IM) device operation. Device improvements are presented in this paper, along with the impact the alterations have on the radia
Potential Limitations on Integrated Silicon Photonic Waveguides Operating in a Heavy Ion Environment
Publikováno v:
IEEE Transactions on Nuclear Science. 65:141-148
The impacts of heavy-ion induced radial ionization profiles in integrated silicon photonic waveguides are investigated. Drude theory is applied to the case of a highly excited silicon waveguide to obtain relations for relevant optical properties to t
Autor:
Adrian Ildefonso, Nelson E. Lourenco, Keisuke Motoki, Zachary E. Fleetwood, George N. Tzintzarov, John D. Cressler, Mehmet Kaynak, Pauline Paki
Publikováno v:
IEEE Transactions on Nuclear Science. 65:231-238
The single-event upset response of SiGe-based digital circuits designed in a third-generation, bulk C-SiGe ( npn + pnp ) BiCMOS platform is investigated. Heavy-ion, broad-beam experiments across data rate, incidence angle, and bit stream pattern show