Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Zachary Carlin"'
Publikováno v:
IEEE Journal of Photovoltaics. 6:997-1003
Currently available materials for III–V multijunction solar cells lattice matched to GaAs covering the spectral range from 1.65 to 1.82 eV are composed of either immiscible quaternary alloys or contain aluminum. We report the fabrication of a novel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77ca4349ed2770ab97dcf4f8d9659022
https://doi.org/10.1109/jphotov.2016.2549745
https://doi.org/10.1109/jphotov.2016.2549745
Autor:
Geoffrey K. Bradshaw, C. Zachary Carlin, Kenneth M. Edmondson, W. Hong, Joshua P. Samberg, Nasser H. Karam, Christopher M. Fetzer, Peter C. Colter, Salah M. Bedair
Publikováno v:
IEEE Journal of Photovoltaics. 4:614-619
Lattice-matched multiple quantum wells (MQWs) consisting of InxGa1-xAs wells with very thin GaAs0.2P0.8 barriers have been incorporated into a GaInP/GaAs tandem solar cell. InGaAs/GaAsP MQWs increase the short-circuit current of the GaAs cell by exte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9e6fd3f295f1ee20d9699845e676817
https://doi.org/10.1109/jphotov.2013.2294750
https://doi.org/10.1109/jphotov.2013.2294750
Autor:
Joshua P. Samberg, Geoffrey K. Bradshaw, Peter C. Colter, Conrad Zachary Carlin, Salah M. Bedair
Publikováno v:
IEEE Transactions on Electron Devices. 60:2532-2536
Minority carrier transport across InGaAs/GaAsP multiple quantum wells is studied by measuring the response of p-i-n and n-i-p GaAs solar cell structures. It is observed that the spectral response depends critically upon the width of the GaAsP barrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f6d5d82c126c0074cb92633c6abe15a
https://doi.org/10.1109/ted.2013.2268421
https://doi.org/10.1109/ted.2013.2268421
Autor:
Conrad Zachary Carlin, Geoffrey K. Bradshaw, Nadia A. El-Masry, Joshua P. Samberg, Salah M. Bedair, Peter C. Colter
Publikováno v:
IEEE Journal of Photovoltaics. 3:278-283
Multiple quantum wells (MQW) lattice matched to GaAs consisting of In0.14Ga0.76As wells balanced with GaAs0.24P0.76 barriers have been used to extend the absorption of GaAs subcells to longer wavelengths for use in an InGaP/GaAs/Ge triple-junction ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68015516d0b5102803055b99b11c69f2
https://doi.org/10.1109/jphotov.2012.2216858
https://doi.org/10.1109/jphotov.2012.2216858
Publikováno v:
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).
The development of high-performance high band gap tunnel junctions is critical for producing efficient multijunction photovoltaic cells that can operate at high solar concentrations. The n-InGaP/GaAs/p-AlGaAs TJ has been demonstrated to produce peak
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::019e7032b2843ab07fc6248767bc022d
https://doi.org/10.1109/pvsc.2016.7750052
https://doi.org/10.1109/pvsc.2016.7750052
Publikováno v:
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).
Quantum well structures hold tremendous potential in taking next step beyond current photovoltaic structures in achieving solar conversion efficiencies beyond 50%. In this paper we investigate p-i-n InGaP solar cells incorporating InGaAsP/InGaP strai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b41e981fb6ca8689c862965601c3ddc1
https://doi.org/10.1109/pvsc.2016.7749566
https://doi.org/10.1109/pvsc.2016.7749566
Publikováno v:
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).
Strain balanced multiple quantum wells (SBMQWs) lattice matched to GaAs consisting of InGaAsP wells balanced with InGaP barriers have been used to extend the absorption of In0.49Ga0.51P subcells to longer wavelengths for use in five and six junction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b94e1281e9714353dcd5d60ab28e0c0
https://doi.org/10.1109/pvsc.2016.7750063
https://doi.org/10.1109/pvsc.2016.7750063
Publikováno v:
AIP Conference Proceedings.
The availability of high band gap (>1.9 eV) tunnel junctions (TJ) with large peak current densities (Jpk) is crucial for the development of multijunction photovoltaic cells that can operate at concentrations above 1000 suns. Existing TJ designs inclu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18bc559e3926922d55827513fa53a45e
https://doi.org/10.1063/1.4962071
https://doi.org/10.1063/1.4962071
Autor:
Salah M. Bedair, Peter C. Colter, Geoffrey K. Bradshaw, Joshua P. Samberg, Conrad Zachary Carlin
Publikováno v:
Journal of Electronic Materials. 42:912-917
Strained-layer superlattice (SLS) structures, such as InGaAs/GaAsP lattice matched to GaAs, have shown great potential in absorption devices such as photodetectors and triple-junction photovoltaic cells. However, until recently they have been somewha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8287259176d4fb509d301e6e59faca17
https://doi.org/10.1007/s11664-012-2375-0
https://doi.org/10.1007/s11664-012-2375-0
Publikováno v:
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).
A new strain-balanced multiple quantum well (MQW) approach to tune the Ga0.51In0.49P bandgap is demonstrated. This approach is based on Ga1−xInxP/Ga1−yInyP (x > y) or Ga1−xInxAszP1−z/Ga1−yInyP (x > y) structures, strain balanced and lattice
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d96c1ed3b4632f32b17f56ed19f560d4
https://doi.org/10.1109/pvsc.2015.7356081
https://doi.org/10.1109/pvsc.2015.7356081