Zobrazeno 1 - 10
of 67
pro vyhledávání: '"Zachary Bryan"'
Publikováno v:
AIP Advances, Vol 5, Iss 9, Pp 097102-097102-6 (2015)
AlGaN/GaN Field Effect Transistors (FETs) are promising biosensing devices. Functionalization of these devices is explored in this study using an in situ approach with phosphoric acid etchant and a phosphonic acid derivative. Devices are terminated o
Externí odkaz:
https://doaj.org/article/9e4ca5cb1bd94806adc86f755917cc0e
Publikováno v:
Journal of the American Academy of Dermatology. 88:e183
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ad8df83ef08ad1bb0af5b112b7624b7
https://doi.org/10.1016/j.jaad.2018.12.009
https://doi.org/10.1016/j.jaad.2018.12.009
Autor:
Ramon Collazo, Isaac Bryan, James Tweedie, Zachary Bryan, Milena Bobea Graziano, Ronny Kirste, Zlatko Sitar
Publikováno v:
Journal of Crystal Growth. 507:389-394
Homoepitaxial non-polar AlN films were realized on m-plane ( 10 1 - 0 ) -oriented AlN single crystals by metalorganic chemical vapor deposition (MOCVD). The microstructural properties of m-plane AlN substrates and homoepitaxial films were assessed by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b86d0c08b89e81046876a5fd34237e4f
https://doi.org/10.1016/j.jcrysgro.2018.07.012
https://doi.org/10.1016/j.jcrysgro.2018.07.012
Publikováno v:
Cutis. 104(6)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::dc83b59a33debd2e7a0683b4f03f64dd
https://pubmed.ncbi.nlm.nih.gov/31939940
https://pubmed.ncbi.nlm.nih.gov/31939940
Autor:
Ramon Collazo, Jon Paul Maria, Isaac Bryan, James Tweedie, Lindsay Hussey, Zachary Bryan, Zlatko Sitar, Christopher T. Shelton, Anthony Rice, Seiji Mita
Publikováno v:
Journal of Crystal Growth. 451:65-71
Metal–polar, Al-rich AlGaN films were grown on both single crystalline AlN and sapphire substrates. The role of surface morphology and surface kinetics on AlGaN composition is presented. With the reduced dislocation density of the films grown on Al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a50a507813b5169195748b619682bdd
https://doi.org/10.1016/j.jcrysgro.2016.06.055
https://doi.org/10.1016/j.jcrysgro.2016.06.055
Autor:
Axel Hoffmann, Doug Irving, Ramon Collazo, Yoshinao Kumagai, Dorian Alden, Zachary Bryan, Benjamin E. Gaddy, Zlatko Sitar, Akinori Koukitu, Gordon Callsen, Isaac Bryan
Publikováno v:
ECS Transactions. 72:31-40
AlGaN alloys are the building blocks for deep UV optoelectronics and high-power devices. It has been demonstrated that the highest crystalline quality AlGaN films with high Al content are obtained on AlN single crystal substrates. The resulting misma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::181e017860883c64546fb657c08fd475
https://doi.org/10.1149/07205.0031ecst
https://doi.org/10.1149/07205.0031ecst
Autor:
Seiji Mita, Isaac Bryan, Ramon Collazo, James Tweedie, Zachary Bryan, Zlatko Sitar, Anthony Rice
Publikováno v:
Journal of Crystal Growth. 438:81-89
AlN epitaxial thin films were grown on both vicinal (0001)-oriented native single crystal AlN substrates and AlN templates grown on vicinal (0001)-oriented sapphire to develop a surface kinetic framework for the control of surface morphology. A Burto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a19371e9faaa4aafffdd9201ad214b0
https://doi.org/10.1016/j.jcrysgro.2015.12.022
https://doi.org/10.1016/j.jcrysgro.2015.12.022
Autor:
Isaac Bryan, Ramon Collazo, Shun Washiyama, Zlatko Sitar, Pramod Reddy, Douglas L. Irving, Seiji Mita, Ji Hyun Kim, Zachary Bryan, James Tweedie, Ronny Kirste
Publikováno v:
Applied Physics Letters. 116:032102
In this work, we determine the dependence of the defect transition energies, electronic bands, and surface charge neutrality levels in AlGaN. With Vacuum level as reference, we show that energy transitions of localized defects and the surface Fermi l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18abe7b023a0a0caebd940efd3165999
https://doi.org/10.1063/1.5140995
https://doi.org/10.1063/1.5140995
Autor:
Dorian Alden, Joshua S. Harris, Zachary Bryan, Jonathon N. Baker, S. Mita, Axel Hoffmann, Zlatko Sitar, Pramod Reddy, Douglas L. Irving, Gordon Callsen, Ramon Collazo
Publikováno v:
Physical Review Applied. 9
The authors present an approach for identifying the point defects and defect complexes responsible for the technology-limiting absorption band in the UV-C range (100---280 nm), and the associated luminescence bands, in single-crystalline AlN. The app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::591fa91a672a464fbf2004a4aec83a2d
https://doi.org/10.1103/physrevapplied.9.054036
https://doi.org/10.1103/physrevapplied.9.054036
Publikováno v:
Dermatology online journal. 23(8)
Weight loss clinics are common in the United States. Unfortunately, some offer dubious weight loss methods such as self-administered human chorionic gonadotropic (HCG) injections. HCG products are unregulated, yet, widely available. Infection is amon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::7e4cc83e4545e062b05f0109a5d1add7
https://pubmed.ncbi.nlm.nih.gov/29469752
https://pubmed.ncbi.nlm.nih.gov/29469752