Zobrazeno 1 - 10
of 59
pro vyhledávání: '"Zachary, Bryan"'
Publikováno v:
Journal of the American Academy of Dermatology. 88:e183
Publikováno v:
AIP Advances, Vol 5, Iss 9, Pp 097102-097102-6 (2015)
AlGaN/GaN Field Effect Transistors (FETs) are promising biosensing devices. Functionalization of these devices is explored in this study using an in situ approach with phosphoric acid etchant and a phosphonic acid derivative. Devices are terminated o
Externí odkaz:
https://doaj.org/article/9e4ca5cb1bd94806adc86f755917cc0e
Autor:
Ramon Collazo, Isaac Bryan, James Tweedie, Zachary Bryan, Milena Bobea Graziano, Ronny Kirste, Zlatko Sitar
Publikováno v:
Journal of Crystal Growth. 507:389-394
Homoepitaxial non-polar AlN films were realized on m-plane ( 10 1 - 0 ) -oriented AlN single crystals by metalorganic chemical vapor deposition (MOCVD). The microstructural properties of m-plane AlN substrates and homoepitaxial films were assessed by
Publikováno v:
Cutis. 104(6)
Autor:
Ramon Collazo, Jon Paul Maria, Isaac Bryan, James Tweedie, Lindsay Hussey, Zachary Bryan, Zlatko Sitar, Christopher T. Shelton, Anthony Rice, Seiji Mita
Publikováno v:
Journal of Crystal Growth. 451:65-71
Metal–polar, Al-rich AlGaN films were grown on both single crystalline AlN and sapphire substrates. The role of surface morphology and surface kinetics on AlGaN composition is presented. With the reduced dislocation density of the films grown on Al
Autor:
Seiji Mita, Isaac Bryan, Ramon Collazo, James Tweedie, Zachary Bryan, Zlatko Sitar, Anthony Rice
Publikováno v:
Journal of Crystal Growth. 438:81-89
AlN epitaxial thin films were grown on both vicinal (0001)-oriented native single crystal AlN substrates and AlN templates grown on vicinal (0001)-oriented sapphire to develop a surface kinetic framework for the control of surface morphology. A Burto
Autor:
Isaac Bryan, Ramon Collazo, Shun Washiyama, Zlatko Sitar, Pramod Reddy, Douglas L. Irving, Seiji Mita, Ji Hyun Kim, Zachary Bryan, James Tweedie, Ronny Kirste
Publikováno v:
Applied Physics Letters. 116:032102
In this work, we determine the dependence of the defect transition energies, electronic bands, and surface charge neutrality levels in AlGaN. With Vacuum level as reference, we show that energy transitions of localized defects and the surface Fermi l
Publikováno v:
Dermatology online journal. 23(8)
Weight loss clinics are common in the United States. Unfortunately, some offer dubious weight loss methods such as self-administered human chorionic gonadotropic (HCG) injections. HCG products are unregulated, yet, widely available. Infection is amon
Autor:
Wei Guo, Seiji Mita, Ramon Collazo, James Tweedie, Michael Gerhold, Marc P. Hoffmann, Zlatko Sitar, Ronny Kirste, Zachary Bryan, Isaac Bryan, Milena Bobea
Publikováno v:
physica status solidi (a). 212:1039-1042
AlGaN lateral polarity structures (LPS) with varying Al composition, have been fabricated by metalorganic chemical vapour deposition on LPS templates containing µm size domains. III-metal and N-polar AlGaN domains have been grown on LT-AlN and c-sap
Autor:
Zachary Bryan, Zlatko Sitar, Milena Bobea, Robert Kucharski, Izabella Grzegory, M. Amilusik, Jan L. Weyher, Boleslaw Lucznik, Tomasz Sochacki, Ramon Collazo, Michal Bockowski, M. Fijalkowski, Isaac Bryan
Publikováno v:
Journal of Crystal Growth. 394:55-60
Crystallization of GaN by the HVPE technique on an MOCVD-GaN/sapphire template with photo-lithographically patterned Ti mask and ammonothermally-grown GaN crystals (Am-GaN) was studied and compared. Structural and optical properties of the obtained f