Zobrazeno 1 - 10
of 784
pro vyhledávání: '"ZIMMER, Thomas"'
Autor:
Pandey, Himadri, Morales, Jorge Daniel Aguirre, Kataria, Satender, Fregonese, Sebastien, Passi, Vikram, Iannazzo, Mario, Zimmer, Thomas, Alarcon, Eduard, Lemme, Max C.
Publikováno v:
Annalen der Physik, 529 (11), 1700106, 2017
We report on electronic transport in dual-gate, artificially stacked bilayer graphene field effect transistors (BiGFETs) fabricated from large-area chemical vapor deposited (CVD) graphene. The devices show enhanced tendency to current saturation, whi
Externí odkaz:
http://arxiv.org/abs/2212.01877
Autor:
Wen, Xin, Arabhavi, Akshay, Quan, Wei, Ostinelli, Olivier, Mukherjee, Chhandak, Deng, Marina, Frégonèse, Sébastien, Zimmer, Thomas, Maneux, Cristell, Bolognesi, Colombo R., Luisier, Mathieu
Publikováno v:
Journal of Applied Physics 130, 034502, 2021
The intrinsic performance of "type-II" InP/GaAsSb double heterojunction bipolar transistors (DHBTs) towards and beyond THz is predicted and analyzed based on a multi-scale technology computer aided design (TCAD) modeling platform calibrated against e
Externí odkaz:
http://arxiv.org/abs/2107.08554
Autor:
Schirmeyer, Jana, Hummert, Sabine, Eick, Thomas, Schulz, Eckhard, Schwabe, Tina, Ehrlich, Gunter, Kukaj, Taulant, Wiegand, Melanie, Sattler, Christian, Schmauder, Ralf, Zimmer, Thomas, Kosmalla, Nisa, Münch, Jan, Bonus, Michele, Gohlke, Holger, Benndorf, Klaus
Publikováno v:
Proceedings of the National Academy of Sciences of the United States of America, 2021 Jul . 118(30), 1-10.
Externí odkaz:
https://www.jstor.org/stable/27052586
Publikováno v:
In Solid State Electronics December 2020 174
Autor:
Couret, Marine, Jaoul, Mathieu, Marc, François, Mukherjee, Chhandak, Céli, Didier, Zimmer, Thomas, Maneux, Cristell
Publikováno v:
In Solid State Electronics July 2020 169
Autor:
Weiß, Mario, Sahoo, Amit Kumar, Raya, Cristian, Santorelli, Marco, Fregonese, Sébastien, Maneux, Cristell, Zimmer, Thomas
This paper studies the mutual coupling in trench isolated multi emitter bipolar transistors fabricated in a Si/SiGe:C HBT technology STMicroelectronics featuring fT and fmax of ~300GHz and ~400GHz, respectively. Thermal coupling parameters are extrac
Externí odkaz:
http://arxiv.org/abs/1304.1781
Publikováno v:
Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European. IEEE, 2011. S. 239-242
This paper describes a new and simple approach to accurately characterize the transient self-heating effect in Si-Ge Heterojunction Bipolar Transistors (HBTs), based on pulse measurements and verified through transient electro-thermal simulations. Th
Externí odkaz:
http://arxiv.org/abs/1303.4641
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