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pro vyhledávání: '"ZHAO Gaojie"'
Akademický článek
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Publikováno v:
AIP Conference Proceedings; 2020, Vol. 2258 Issue 1, p1-7, 7p, 2 Diagrams, 2 Charts, 4 Graphs
Akademický článek
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Publikováno v:
Journal of Shanghai Normal University (Natural Sciences), Vol 44, Iss 4, Pp 430-434 (2015)
The Penrose′s cosmic censorship conjecture says that naked singularities do not exist in nature.So,it seems reasonable to further conjecture that not even a singularity exists in nature.In this paper,a regular black hole without singularity is stud
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doajarticles::d1c48b21061d640f170c0e004624dbf0
http://qktg.shnu.edu.cn/zrb/shsfqkszrb/ch/reader/create_pdf.aspx?file_no=201504014&flag=1&year_id=2015&quarter_id=4
http://qktg.shnu.edu.cn/zrb/shsfqkszrb/ch/reader/create_pdf.aspx?file_no=201504014&flag=1&year_id=2015&quarter_id=4
Autor:
ZHANG Yongping, CHENG Yue, LU Wuyue, TAN Jiahui, ZHAO Gaojie, LIU Yihong, SUN Yujun, CHEN Zhizhan, SHI Wangzhou, LI Wanrong, LU Yifeng
Publikováno v:
Journal of Shanghai Normal University (Natural Sciences), Vol 43, Iss 2, Pp 132-136 (2014)
The process of the photolithography were introduced in this paper,including pre-baking,the photoresist coating,soft baking,alignment and exposure,post-exposure baking,development,hard baking.Then we mainly discussed the problems in the photolithograp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doajarticles::04131a473c686d91de15ddcb1b924e2f
http://qktg.shnu.edu.cn/zrb/shsfqkszrb/ch/reader/create_pdf.aspx?file_no=201402004&flag=1&year_id=2014&quarter_id=2
http://qktg.shnu.edu.cn/zrb/shsfqkszrb/ch/reader/create_pdf.aspx?file_no=201402004&flag=1&year_id=2014&quarter_id=2
Publikováno v:
Nanoscale Research Letters
In this letter, the uniform 4H silicon carbide (SiC) mesopores was fabricated by pulsed electrochemical etching method. The length of the mesopores is about 19 μm with a diameter of about 19 nm. The introduction of pause time (T off) is crucial to f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1bfdffd9610928d8b4d0c3234bad85d7
https://pubmed.ncbi.nlm.nih.gov/25324708
https://pubmed.ncbi.nlm.nih.gov/25324708
Publikováno v:
AIP Advances, Vol 6, Iss 6, Pp 065219-065219-9 (2016)
The (000 1 ¯ ) C face of 4H-SiC wafer was etched by reactive ion etching in SF6/O2 plasma. The effect of etching parameters, such as work pressure, SF6:O2 ratio and etching time, on the residue formation were systematically investigated. The residue
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::80ff9524346a56f7d3110f527e4e0355
https://doaj.org/article/f8978c5485db4a809532c566b40239f1
https://doaj.org/article/f8978c5485db4a809532c566b40239f1
Publikováno v:
Chinese Physics B. 24:107303
The Pt/Si/Ta/Ti multilayer metal contacts on 4H–SiC are annealed in Ar atmosphere at 600 °C–1100 °C by a rapid thermal processor (RTP). The long-term thermal stability is evaluated by aging the annealed contact at 600 °C in air. The contact's
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b75eebd11ed08568ce6fe41c645076c9
https://doi.org/10.1088/1674-1056/24/10/107303
https://doi.org/10.1088/1674-1056/24/10/107303