Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Z.X. Xing"'
Publikováno v:
Surface and Interface Analysis. 46:307-311
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc7b749d44814c27298ca278d1c7c007
https://doi.org/10.1002/sia.5636
https://doi.org/10.1002/sia.5636
Publikováno v:
Surface and Interface Analysis. 43:535-538
SIMS analysis of SiGe material is intricate and challenging due to the mass interference effects. For instance, analysis of arsenic (As) in SiGe requires ultra-high mass resolution (MR) to resolve the mass interferences to As and AsSi. Unfortunately,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0eeae3b943443e2af2c38018c60fad5
https://doi.org/10.1002/sia.3540
https://doi.org/10.1002/sia.3540
Publikováno v:
Applied Surface Science. 255:1433-1436
Roughness development is one of the most often addressed issues in the secondary ion mass spectrometry (SIMS) ultra-shallow depth profiling. The effect of oxygen flooding pressure on the roughness development has been investigated under the bombardme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3be19fc245fdd8e682b02d87bc6c669c
https://doi.org/10.1016/j.apsusc.2008.06.176
https://doi.org/10.1016/j.apsusc.2008.06.176
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 7:369-372
Mobile ions may cause critical failures in integrated circuits. For silicon-on-insulator (SOI) wafers, the mobile ions affect not only the reliability of back end of the line but also the performance of the transistors. This paper presents a case stu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5459edbbf440946bdac6528a8a58bd4
https://doi.org/10.1109/tdmr.2007.901279
https://doi.org/10.1109/tdmr.2007.901279
Autor:
X.M. Li, Z.X. Xing, Y.Q. Shen, S.Y. Chou, K. Li, Y.F. Liu, Y. Shen, Y.K. Zhou, Y.N. Hua, M. Hao, J.J. Shao, W.W. An
Publikováno v:
International Symposium for Testing and Failure Analysis.
Aluminum-copper alloys are popular for many applications that take advantage of the combination of properties in the alloys. This paper describes the use of multiple advanced failure analysis tools to analyze the physical and chemical properties of A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::060dc8021d1ccd7b17f68da40db53f23
https://doi.org/10.31399/asm.cp.istfa2014p0496
https://doi.org/10.31399/asm.cp.istfa2014p0496
Publikováno v:
Applied Surface Science. 255:1427-1429
As the wafer size continues to increase and the feature size of the integrated circuits (IC) continues to shrink, process control of IC manufacturing becomes ever more important to reduce the cost of failures caused by the drift of processes or equip
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd52e090378980495e56a75cdf8bec88
https://doi.org/10.1016/j.apsusc.2008.06.046
https://doi.org/10.1016/j.apsusc.2008.06.046
Publikováno v:
Applied Surface Science. 255:1437-1439
Ultra-thin silicon oxynitride (SiOxNy) is the leading candidate to replace pure silicon oxide (SiO2) before high k dielectrics come into place because oxynitrides demonstrate several properties superior to those of the conventional gate oxides. The p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0b0e6878ca01082f42d2de28d358556
https://doi.org/10.1016/j.apsusc.2008.06.047
https://doi.org/10.1016/j.apsusc.2008.06.047
Autor:
Bing Sheng Khoo, D. Gui, Z.X. Xing, J. J. Shao, Hwang Sheng Lee, X. M. Li, Y. Q. Shen, M. Hao
Publikováno v:
Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Determination of compositional distribution for solder material is of particular interest in the area of failure analysis, specifically in the investigation of various solder alloy formations during the joining processes and interconnection failures.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ca856320bdd646fa1eb96ddcc3fc660
https://doi.org/10.1109/ipfa.2013.6599145
https://doi.org/10.1109/ipfa.2013.6599145
Publikováno v:
2011 IEEE 13th Electronics Packaging Technology Conference.
CMOS (Complementary Metal—Oxide—Semiconductor) image sensors are commonly used in many modern electrical products such as digital cameras, camera phones, automotive applications, gaming applications, etc. In this paper, we will discuss unusual pi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33a840fdfe1fefd2338cc56d059c4221
https://doi.org/10.1109/eptc.2011.6184507
https://doi.org/10.1109/eptc.2011.6184507
Publikováno v:
International Symposium for Testing and Failure Analysis.
Several product lots were found to suffer from data retention failures in OTP (one time program) devices. PFA (physical failure analysis) was performed on these devices, but nothing abnormal was observed. Cross-sectional TEM (transmission electron mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f71118e122efe1289668002b02612434
https://doi.org/10.31399/asm.cp.istfa2011p0198
https://doi.org/10.31399/asm.cp.istfa2011p0198