Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Z.J. Lemnios"'
Autor:
Z.J. Lemnios, J.C. Zolper
Publikováno v:
IEEE Circuits and Devices Magazine. 22:16-21
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::389be9ea0c69bab3a823c8b64ff7fd01
https://doi.org/10.1109/mcd.2006.1598075
https://doi.org/10.1109/mcd.2006.1598075
Autor:
K.J. Gabriel, Z.J. Lemnios
Publikováno v:
IEEE Design & Test of Computers. 11:8-13
Plans for a government sponsored research program call for the development of a new electronics technology base for hand-size information systems. This base will enable the design and implementation of semiconductor technologies that consume two orde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a73b6c5e59f15f183c0b4441c62a809
https://doi.org/10.1109/54.329446
https://doi.org/10.1109/54.329446
Autor:
J.C. Zolper, Z.J. Lemnios
Publikováno v:
2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573).
The increasing complexity of today's battlespace environment has driven the use of multiple sensors to improve target acquisition and discrimination. This has resulted in an explosion in signal processing demands in order to make an actuation decisio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::681a1f3be067d046cb82419b6e195a75
https://doi.org/10.1109/csics.2004.1392469
https://doi.org/10.1109/csics.2004.1392469
Publikováno v:
2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573).
After many years of materials development and circuit research, silicon-on-insulator (SOI) technology clearly has become a viable approach for high performance microelectronics. As semiconductor technology continues to scale, the value of an SOI mate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0d19ce733eded4192cebefd6ac6e241
https://doi.org/10.1109/soi.2004.1391532
https://doi.org/10.1109/soi.2004.1391532
Autor:
Z.J. Lemnios
Publikováno v:
IEEE Conference Record - Abstracts. 1996 IEEE International Conference on Plasma Science.
Summary form only given. New semiconductor technology generations are introduced approximately every three years. Each new generation is characterized by reduced feature size and increased circuit complexity. By 1998, the semiconductor industry will
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1eb2478a5fb841e803ccbbca7e138a4c
https://doi.org/10.1109/plasma.1996.550745
https://doi.org/10.1109/plasma.1996.550745
Autor:
Z.J. Lemnios
Publikováno v:
Proceedings of ISSE'95 - International Symposium on Signals, Systems and Electronics.
Low power electronics are the key enabling technology of a new class of highly functional portable information technology components and consumer products. The key challenge is to reduce power dissipation with minimal effect on computational performa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3b177340bd6aaa5edc79c10eeb67e6a
https://doi.org/10.1109/issse.1995.497986
https://doi.org/10.1109/issse.1995.497986
Autor:
Z.J. Lemnios
Publikováno v:
1995 Symposium on VLSI Technology. Digest of Technical Papers.
SOI is an attractive technology option for low power, high performance semiconductors. A number of breakthroughs and developments are required to move the material into mainstream acceptance by manufacturers. It is too early to predict the future dom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87ab2769f06572e1cc1dac002ead254b
https://doi.org/10.1109/vlsit.1995.520833
https://doi.org/10.1109/vlsit.1995.520833
Autor:
Z.J. Lemnios
Publikováno v:
International Symposium on Semiconductor Manufacturing.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c4870ad2f85aefa052d6fadaebd31a7
https://doi.org/10.1109/issm.1993.670304
https://doi.org/10.1109/issm.1993.670304
Publikováno v:
IEEE Transactions on Electron Devices. 31:1100-1103
The fabrication and optimization of ohmic contacts to GaAs prepared by heating the wafers on a hot plate is described. The method offers high throughput and is production adaptable. The apparatus consists of a hot plate constructed of a heat pipe wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e0fb3ca085992520f32d97f0920b64b
https://doi.org/10.1109/t-ed.1984.21670
https://doi.org/10.1109/t-ed.1984.21670
Publikováno v:
1980 International Electron Devices Meeting.
This paper reports on the fabrication of an X-band GaAs microstrip amplifier as a test vehicle to establish a monolithic process capability. A variety of components are integrated on this circuit, including overlay and interdigital capacitors, via ho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47dbc292e7eb408b7296cfcc9841c4ba
https://doi.org/10.1109/iedm.1980.189860
https://doi.org/10.1109/iedm.1980.189860