Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Z.B. Sobczak"'
Publikováno v:
1980 International Electron Devices Meeting.
By using a modified LOCOS oxidation process, a 1 µm thick layer of SiO 2 was grown on selected areas of a {100} silicon wafer such that the resulting oxide surface was level with the original silicon surface. A 0.5 µm thick LPCVD polysilicon layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfdffd32921268c94f144d8086e25889
https://doi.org/10.1109/iedm.1980.189893
https://doi.org/10.1109/iedm.1980.189893
