Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Z.A. Shafi"'
Publikováno v:
Journal of Applied Physics. 78:2823-2829
A comparison is made of the dc electrical characteristics of Si/Si1−xGex heterojunction bipolar transistors (HBTs) fabricated on high oxygen content material grown using molecular beam epitaxy and low oxygen content material grown using chemical va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd4a6c050e613092ff7aeb4e1be28d1b
https://doi.org/10.1063/1.360082
https://doi.org/10.1063/1.360082
Publikováno v:
Diamond and Related Materials. 2:1445-1448
Bipolar action from an amorphous carbon (a-C)/Si heterojunction is reported. A bipolar transistor structure with a p-type Si base and an undoped wide-band-gap a-C emitter is used to monitor the current at the collector as a function of base current.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e677f7cc0677ec34d8aeed0ccf599ef4
https://doi.org/10.1016/0925-9635(93)90156-v
https://doi.org/10.1016/0925-9635(93)90156-v
Autor:
I.R.C. Post, R Jackson, Peter Ashburn, J.L. Glasper, Z.A. Shafi, D.J. Robbins, A J Pidduck, W.Y. Leong
Publikováno v:
Microelectronic Engineering. 19:447-450
Transistors fabricated with systematic variations in Ge fraction, base doping and junction spacer width show near-ideal electrical characteristics. Emitter implantation generates anomalous boron diffusion in the base.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76179a23457cb7a1042cd5969aa90f2c
https://doi.org/10.1016/0167-9317(92)90472-4
https://doi.org/10.1016/0167-9317(92)90472-4
Autor:
C.J. Gibbings, A.S.R. Martin, J. Whitehurst, I.R.C. Post, C.G. Tuppen, Z.A. Shafi, D.J. Godfrey, M.E. Jones, Peter Ashburn, G.R. Booker
Publikováno v:
Microelectronic Engineering. 15:135-138
The effect of Rapid Thermal Annealing (RTA) treatment on the base and collector currents of Si/Si 1-x Ge x HBTs is investigated. Whilst the base current is improved by high temperature annealing, probably through annealing out of point defects (reduc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acab6fc4354082491eedafe4c2f9ac1a
https://doi.org/10.1016/0167-9317(91)90198-m
https://doi.org/10.1016/0167-9317(91)90198-m
Publikováno v:
IEEE Transactions on Electron Devices. 38:1973-1976
Si/SiGe heterojunction transistors were fabricated with 21.4 nm, heavily doped (5*10/sup 19/ cm/sup -3/) bases. Electrical results from these transistors are presented, and compared with results from comparable silicon homojunction control devices. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e1314a7584f571a30f20c1265d4822e
https://doi.org/10.1109/16.119045
https://doi.org/10.1109/16.119045
Publikováno v:
IEEE Journal of Solid-State Circuits. 25:1268-1276
A comparison between the predicted propagation delays of ECL (emitter coupled logic) circuits composed of Si/SiGe heterojunction and silicon homojunction bipolar transistors is presented. Important transistor parameters such as the current gain, base
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e97e8391ece0e37c95cb88f343640282
https://doi.org/10.1109/4.62151
https://doi.org/10.1109/4.62151
Publikováno v:
Proceedings of the 1991 Bipolar Circuits and Technology Meeting.
The use of polycrystalline silicon-carbide (SiCarb) as a wide bandgap emitter for bipolar transistors is investigated. The SiCarb is deposited in a modified LPCVD reactor with propane used as the carbon source gas, giving carbon concentrations of 4,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b27557832a2a60e5ad1baa180146e9ee
https://doi.org/10.1109/bipol.1991.160958
https://doi.org/10.1109/bipol.1991.160958
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