Zobrazeno 1 - 10
of 64
pro vyhledávání: '"Z. Zolnai"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 761-768 (2022)
High-energy low-mass proton implantation achieved considerable interest in semiconductor technology, due to much deeper penetration of hydrogen ions into silicon as compared to common dopants, boron, phosphorous, and arsenic. Accordingly, monitoring
Externí odkaz:
https://doaj.org/article/6d3f508396884b1bb121f734104a64c1
Autor:
I. Banyasz, S. Berneschi, M. Bettinelli, M. Brenci, M. Fried, N. Q. Khanh, T. Lohner, G. Nunzi Conti, S. Pelli, P. Petrik, G. C. Righini, A. Speghini, A. Watterich, Z. Zolnai
Publikováno v:
IEEE Photonics Journal, Vol 4, Iss 3, Pp 721-727 (2012)
We report on the fabrication and characterization of planar waveguides in an Er-doped tungsten-tellurite glass by implantation of 3.5 MeV N+ ions. Implantations were carried out in a wide fluence range of 1·1016 ÷8 ·1016 ions/cm2. Waveguides were
Externí odkaz:
https://doaj.org/article/ebd739019212413c8c7a2680ecb3aa5e
Publikováno v:
MRS Advances. 7:1321-1325
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea798148dcec5b01328673d78d785ccc
https://doi.org/10.1557/s43580-022-00381-5
https://doi.org/10.1557/s43580-022-00381-5
Dose monitoring in MeV energy hydrogen implanted silicon by photo-modulated reflectance measurements
Publikováno v:
2021 20th International Workshop on Junction Technology (IWJT).
Proton implantation into silicon is utilized for several purposes in semiconductor industry. Low dose implantations can be applied in power electronic devices to fine tune the minority charge carrier lifetime [1] , while medium dose proton implants g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0146e6d4f13a3ec0da975cc3ed16d7b5
https://doi.org/10.23919/iwjt52818.2021.9609394
https://doi.org/10.23919/iwjt52818.2021.9609394
Autor:
Attila Németh, Roberto Fornari, Matteo Bosi, Alessio Lamperti, Alessio Bosio, Ildikó Cora, Antonella Parisini, Carmine Borelli, Zsolt Fogarassy, Z. Zolnai, Salvatore Vantaggio, Béla Pécz, Laura Fornasini
Publikováno v:
Acta materialia 210 (2021): 116848-1–116848-9. doi:10.1016/j.actamat.2021.116848
info:cnr-pdr/source/autori:Bosio A.; Parisini A.; Lamperti A.; Borelli C.; Fornasini L.; Bosi M.; Cora I.; Fogarassy Z.; Pecs B.; Zolnai Z.; Nemeth A.; Vantaggio S.; Fornari R./titolo:n-Type doping of epsilon-Ga2O3 epilayers by high-temperature tin diffusion/doi:10.1016%2Fj.actamat.2021.116848/rivista:Acta materialia/anno:2021/pagina_da:116848-1/pagina_a:116848-9/intervallo_pagine:116848-1–116848-9/volume:210
info:cnr-pdr/source/autori:Bosio A.; Parisini A.; Lamperti A.; Borelli C.; Fornasini L.; Bosi M.; Cora I.; Fogarassy Z.; Pecs B.; Zolnai Z.; Nemeth A.; Vantaggio S.; Fornari R./titolo:n-Type doping of epsilon-Ga2O3 epilayers by high-temperature tin diffusion/doi:10.1016%2Fj.actamat.2021.116848/rivista:Acta materialia/anno:2021/pagina_da:116848-1/pagina_a:116848-9/intervallo_pagine:116848-1–116848-9/volume:210
The good control of the n-type doping is a key issue for the fabrication of efficient devices based on e-Ga2O3 epilayers. In this work we studied the possibility of doping the e-Ga2O3 thin films, epitaxially grown on c-oriented sapphire by metal-orga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::42aba7cd5e5e1596968e8936f9d70d95
https://www.sciencedirect.com/science/article/abs/pii/S1359645421002287
https://www.sciencedirect.com/science/article/abs/pii/S1359645421002287
Autor:
Mykyta Toporkov, V. Avrutin, Ümit Özgür, E. Kótai, Denis Demchenko, Zoltán Szabó, J. Volk, Hadis Morkoç, Serdal Okur, Z. Zolnai
Publikováno v:
Applied Surface Science. 327:43-50
The atomic composition with less than 1–2 atom% uncertainty was measured in ternary BeZnO and quaternary BeMgZnO alloys using a combination of nondestructive Rutherford backscattering spectrometry with 1 MeV He+ analyzing ion beam and non-Rutherfor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6f0e77d7778469fcd243be6e43b682c
https://doi.org/10.1016/j.apsusc.2014.11.067
https://doi.org/10.1016/j.apsusc.2014.11.067
Autor:
Ágota Tóth, A. I. Chumakov, Dimitrios Bessas, Dániel G. Merkel, András Deák, C. Van Haesendonck, Z. Zolnai, Norbert Nagy, Rudolf Rüffer, H. Paddubrouskaya
Publikováno v:
Nanoscale. 7:12878-12887
To design custom magnetic nanostructures, it is indispensable to acquire precise knowledge about the systems in the nanoscale range where the magnetism forms. In this paper we present the effect of a curved surface on the evolution of magnetism in ul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b5f8448f235bf8dc8bb8648cd744cdd0
https://doi.org/10.1039/c5nr02928g
https://doi.org/10.1039/c5nr02928g
Autor:
I. Bányász, Z. Zolnai, M. Fried, T. Lohner, S. Berneschi, d, G.C. Righini, S. Pelli, G. Nunzi Conti
Publikováno v:
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
307 (2013): 299–304. doi:10.1016/j.nimb.2013.02.044
info:cnr-pdr/source/autori:I. Bányász, Z. Zolnai, M. Fried, T. Lohner, S. Berneschi,d, G.C. Righini, S. Pelli, G. Nunzi Conti/titolo:Single-and double energy N+ ion irradiated planar optical waveguides in Er: Tungsten-tellurite oxide glass and sillenite type Bismuth Germanate crystals working up to telecommunications wavelengths/doi:10.1016%2Fj.nimb.2013.02.044/rivista:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print)/anno:2013/pagina_da:299/pagina_a:304/intervallo_pagine:299–304/volume:307
307 (2013): 299–304. doi:10.1016/j.nimb.2013.02.044
info:cnr-pdr/source/autori:I. Bányász, Z. Zolnai, M. Fried, T. Lohner, S. Berneschi,d, G.C. Righini, S. Pelli, G. Nunzi Conti/titolo:Single-and double energy N+ ion irradiated planar optical waveguides in Er: Tungsten-tellurite oxide glass and sillenite type Bismuth Germanate crystals working up to telecommunications wavelengths/doi:10.1016%2Fj.nimb.2013.02.044/rivista:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print)/anno:2013/pagina_da:299/pagina_a:304/intervallo_pagine:299–304/volume:307
Ion implantation proved to be a universal technique for producing waveguides in most optical materials. Tellurite glasses are good hosts of rare-earth elements for the development of fibre and integrated optical amplifiers and lasers covering all the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::89c0edbd6beff412e53f11b03096950f
https://doi.org/10.1016/j.nimb.2013.02.044
https://doi.org/10.1016/j.nimb.2013.02.044
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
The codes RBS-MAST, STRUCTNRA, F95-Rough and CORTEO are simulation codes for ion beam analysis spectra from two- or three-dimensional sample structures. The codes were intercompared in a code-code comparison using an idealized grating structure and b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d86bb250ac0a5fbe391524e588408735
https://hdl.handle.net/11858/00-001M-0000-002B-5075-C11858/00-001M-0000-002B-75A1-411858/00-001M-0000-002B-5077-8
https://hdl.handle.net/11858/00-001M-0000-002B-5075-C11858/00-001M-0000-002B-75A1-411858/00-001M-0000-002B-5077-8
Autor:
Peter Petrik, Marcus Röppischer, Z. Zolnai, Christoph Werner, Miklós Fried, T. Lohner, Christoph Cobet, O. Polgár, Emil Agocs, Z. Betyak
Publikováno v:
Thin Solid Films. 519:2791-2794
The optical properties of ion implantation induced disorder in SiC have been investigated in the photon energy range of 5–9 eV using spectroscopic ellipsometry (SE). The most characteristic interband transitions of SiC are located between 5 and 8 e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d47d71e04b63bc72fda9e0502f28939
https://doi.org/10.1016/j.tsf.2010.12.070
https://doi.org/10.1016/j.tsf.2010.12.070