Zobrazeno 1 - 10
of 182
pro vyhledávání: '"Z. Z. Zhi"'
Publikováno v:
Journal of Physics D: Applied Physics. 40:4281-4284
ZnO nanocrystals embedded in SiO2 matrix thin films were fabricated on Si (1 0 0) single crystal substrates by plasma enhanced chemical vapour deposition (PECVD) at 230 °C. Subsequently, the as-deposited samples were annealed at different temperatur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f5990e5b0f8c85740170d0676f553f1
https://doi.org/10.1088/0022-3727/40/14/027
https://doi.org/10.1088/0022-3727/40/14/027
Publikováno v:
Journal of Physics D: Applied Physics. 36:719-722
To improve ZnO thin film quality, the ZnO thin films grown on silicon (100) by plasma enhanced chemical vapour deposition from Zn(C2H5)2 and CO2 gas mixtures at a low temperature of 120°C are annealed in an oxygen ambient at temperature ranging from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d943a3312b34ab8ba751429820da483f
https://doi.org/10.1088/0022-3727/36/6/314
https://doi.org/10.1088/0022-3727/36/6/314
Autor:
Don O. Henderson, Y.C. Liu, X.W. Fan, R. Mu, Bin Li, D.Z. Shen, Junyan Zhang, Z. Z. Zhi, Y. M. Lu
Publikováno v:
Journal of Materials Research. 18:8-13
In this paper, we report a simple method for preparing p-type ZnO thin films by thermal oxidization of Zn3N2 thin films. The Zn3N2 films were grown on fused silica substrates by using plasma-enhanced chemical vapor deposition from a Zn(C2H5)2 and NH3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f5bdfb3e4bc802844c0b600a495b954
https://doi.org/10.1557/jmr.2003.0003
https://doi.org/10.1557/jmr.2003.0003
Autor:
Y. C. Liu, D. Z. Shen, X. W. Fan, X. G. Kong, Youming Lu, Bingsheng Li, Z. Z. Zhi, J. Y. Zhang
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 20:1779-1783
ZnO thin films have been grown on Si(100) substrate by plasma enhanced chemical vapor deposition using a zinc organic source [Zn(C2H5)2] and carbon dioxide (CO2) gas mixture at 503 K. The dependence of ZnO thin film quality on the gas flow rate ratio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cc8b5f79fc63d97db9a0cab67217fa8
https://doi.org/10.1116/1.1503783
https://doi.org/10.1116/1.1503783
Autor:
Z Z Zhi, Dezhen Shen, Debin Zhao, Shijian Chen, Jungang Zhang, Y.C. Liu, Y M Lu, Xizhi Fan, J G Ma
Publikováno v:
Journal of Crystal Growth. 240:467-472
In this paper, we report the preparation of nanocrystalline ZnO thin films on Si (1 0 0) substrates using a simple method, in which a resistive thermal evaporation of Zn and a two-step annealing process were employed. The aim of the first annealing s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcce1f9731bc1bb86b31f9db1e229e2b
https://doi.org/10.1016/s0022-0248(02)00925-9
https://doi.org/10.1016/s0022-0248(02)00925-9
Autor:
X. W. Fan, Y. C. Liu, X. G. Kong, J. Y. Zhang, Youming Lu, Bingsheng Li, D. Z. Shen, Z. Z. Zhi
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 20:265-269
High quality ZnO thin films with a c-axis-orientated wurtize structure have been grown on a Si(100) substrate by plasma enhanced chemical vapor deposition using a zinc organic source [Zn(C2H5)2] and carbon dioxide (CO2) gas mixture at low temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b18535c674dc5c5d890256c3ddcab4bd
https://doi.org/10.1116/1.1430427
https://doi.org/10.1116/1.1430427
Autor:
W. Xu, X.T. Zhang, Z Z Zhi, Y.M. Lu, D.Z. Shen, J. Y. Zhang, G Z Zhong, X G Kong, X.W. Fan, Y.C. Liu
Publikováno v:
Journal of Physics D: Applied Physics. 34:3430-3433
In this paper, we report photoluminescence (PL) from high-quality nanocrystalline ZnO thin films. The high-quality nanocrystalline ZnO thin films are prepared by thermal oxidation of ZnS films deposited by low-pressure metal organic chemical vapour d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08963bc614c769b1ddd5a55830b37073
https://doi.org/10.1088/0022-3727/34/24/302
https://doi.org/10.1088/0022-3727/34/24/302
Publikováno v:
Kemija u Industriji; 2016, Vol. 65 Issue 5/6, p283-288, 6p
Publikováno v:
E3S Web of Conferences; 9/30/2024, Vol. 573, p1-5, 5p
Autor:
Shufan Wu, Zheng Gong, Lu Qian, Xinlong Yan, Jianguo Pan, Fan Yang, Shangke Pan, Yanqing Zheng
Publikováno v:
CrystEngComm; 9/14/2024, Vol. 26 Issue 34, p4623-4633, 11p