Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Z. V. Basheleishvili"'
Autor:
T. A. Pagava, Z. V. Basheleishvili
Publikováno v:
Semiconductors. 37:1033-1036
p-Si:B samples were irradiated with 8-MeV electrons. The values of the activation energy of annealing for K centers and for (V + B) complexes obtained from the curves of isochronous annealing of these centers are found to be equal to 0.915 and 1.6 eV
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::414d7bb86899fe483be5e56cf90be888
https://doi.org/10.1134/1.1610113
https://doi.org/10.1134/1.1610113
Autor:
T. A. Pagava, Z. V. Basheleishvili
Publikováno v:
Semiconductors. 36:1077-1078
The effect of the concentration of the majority charge carriers (n) and the electron-flux density (ϕ) on the efficiency of radiation-defect production (η) in n-Si samples was studied. It is shown that the dependence η(ϕ) features a maximum, which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39b3094d145c4c438f6dd8c66d71429c
https://doi.org/10.1134/1.1513847
https://doi.org/10.1134/1.1513847
Autor:
T. A. Pagava, Z. V. Basheleishvili
Publikováno v:
Semiconductors. 33:845-846
indent 0 pt Local irradiation of p-Si and n-Si followed by measurement of the bulk photovoltage along the sample is used to show that the Coulomb interaction energy between unlike charged components of Frenkel pairs is negligible compared to energies
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de1f691629172d22fa361720d676529b
https://doi.org/10.1134/1.1187794
https://doi.org/10.1134/1.1187794
Autor:
T. A. Pagava, Z. V. Basheleishvili
Publikováno v:
Semiconductors. 33:508-509
The effect of the electron flux density ψ on the efficiency η of the production of radiation defects in n-and p-type Si samples is investigated. It is shown that the application of an electric field to the sample during irradiation affects ψ(η) o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13ef40e3ded8bc3bcdbbd3b36d6d869e
https://doi.org/10.1134/1.1187900
https://doi.org/10.1134/1.1187900