Zobrazeno 1 - 10
of 76
pro vyhledávání: '"Z. U. Rek"'
Publikováno v:
Journal of Materials Research. 21:1645-1657
The microstructures of Tl2Ba2Ca1Cu2O8 (Tl-2212) films are very strongly influenced by the processing parameters used to synthesize the superconducting phase and also control the microwave surface resistance values that are of key importance in the ap
Publikováno v:
Thin Solid Films. 472:96-104
A series of chromium nitride films has been prepared by reactive DC magnetron sputtering onto multiple moving substrates. The films are characterized via an array of experimental techniques, including high-resolution synchrotron radiation X-ray scatt
Autor:
R Nagarajan, James W Pomeroy, F Baig, E. A. Payzant, J. Chaudhuri, Zhou Xu, James H. Edgar, Martin Kuball, Z. U. Rek, Harry M. Meyer
Publikováno v:
Journal of Crystal Growth. 273:431-438
The growth of B 12 As 2 by chemical vapor deposition on 6H–SiC substrates using hydrides B 2 H 6 and AsH 3 as the reactants is described. The growth rate increased from 1.5 μm/h at 1100 °C to a maximum of 5 μm/h at 1400 °C, and decreased at hig
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 22:2365-2372
A series of Cr films were deposited onto native oxides of (100) Si substrates via a confocal deposition geometry in a magnetron sputter chamber. The film growth chamber was incorporated with an in situ x-ray diffraction system, which allowed the coll
Publikováno v:
Surface and Coatings Technology. 185:329-339
The effects of deposition conditions on phase formation, crystallographic characteristics, residual stress, and morphology of chromium nitride films have been studied. The films were prepared via reactive magnetron sputtering with a confocal depositi
Publikováno v:
Journal of Crystal Growth. 262:89-94
The effectiveness and reliability of estimating the dislocation density in GaN thin films and bulk crystals by defect selective etching in eutectic KOH/NaOH have already been successfully demonstrated. In this communication, we report the results of
Autor:
J. Y. Lin, Jharna Chaudhuri, Bin Liu, Z. U. Rek, D Zhuang, F Mogal, Hongxing Jiang, Martin Kuball, H.E. Huey, James H. Edgar
Publikováno v:
Journal of Crystal Growth. 262:168-174
AlN single crystal platelets up to 2×3 mm 2 and needles 1 mm in diameter and 3 mm in length were successfully grown by directly heating the source materials with microwaves. The process temperature was over 2000°C and the pressure was kept constant
Publikováno v:
Journal of Applied Physics. 92:7183-7192
A series of Cr films with varying thicknesses have been prepared using a multiple moving substrate deposition geometry. These films have been investigated with several experimental techniques, including synchrotron x-ray scattering, pole figures, ele
Publikováno v:
Surface and Coatings Technology. 132:124-129
The residual stress varied substantially as a function of thickness in a series of 2.5 to 500 nm thick Mo films. Films were sputter deposited onto Si wafers with native oxide, and the residual stress was measured using double crystal diffraction topo
Publikováno v:
Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences. 357:2681-2688
The adhesion of thin polycrystalline metallic Ta films to Si wafer substrates was studied in situ under real–time conditions using white–beam synchrotron Laue transmission diffraction topography with simultaneous radiographic imaging. The observa