Zobrazeno 1 - 10
of 334
pro vyhledávání: '"Z. U. Rek"'
Publikováno v:
Journal of Materials Research. 21:1645-1657
The microstructures of Tl2Ba2Ca1Cu2O8 (Tl-2212) films are very strongly influenced by the processing parameters used to synthesize the superconducting phase and also control the microwave surface resistance values that are of key importance in the ap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c8567d56d43411ae0ec8b6e2150bdb1
https://doi.org/10.1557/jmr.2006.0208
https://doi.org/10.1557/jmr.2006.0208
Publikováno v:
Thin Solid Films. 472:96-104
A series of chromium nitride films has been prepared by reactive DC magnetron sputtering onto multiple moving substrates. The films are characterized via an array of experimental techniques, including high-resolution synchrotron radiation X-ray scatt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcba3ba640a43289eee240ec5b57f1d3
https://doi.org/10.1016/j.tsf.2004.06.116
https://doi.org/10.1016/j.tsf.2004.06.116
Autor:
R Nagarajan, James W Pomeroy, F Baig, E. A. Payzant, J. Chaudhuri, Zhou Xu, James H. Edgar, Martin Kuball, Z. U. Rek, Harry M. Meyer
Publikováno v:
Journal of Crystal Growth. 273:431-438
The growth of B 12 As 2 by chemical vapor deposition on 6H–SiC substrates using hydrides B 2 H 6 and AsH 3 as the reactants is described. The growth rate increased from 1.5 μm/h at 1100 °C to a maximum of 5 μm/h at 1400 °C, and decreased at hig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8af888c69d3e52b6ce87678287fa4773
https://doi.org/10.1016/j.jcrysgro.2004.07.068
https://doi.org/10.1016/j.jcrysgro.2004.07.068
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 22:2365-2372
A series of Cr films were deposited onto native oxides of (100) Si substrates via a confocal deposition geometry in a magnetron sputter chamber. The film growth chamber was incorporated with an in situ x-ray diffraction system, which allowed the coll
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf749bef699b7a44fb93a81a5173d0bd
https://doi.org/10.1116/1.1804984
https://doi.org/10.1116/1.1804984
Publikováno v:
Surface and Coatings Technology. 185:329-339
The effects of deposition conditions on phase formation, crystallographic characteristics, residual stress, and morphology of chromium nitride films have been studied. The films were prepared via reactive magnetron sputtering with a confocal depositi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd1f61f6c04b32b6f25a2cc33e9eba58
https://doi.org/10.1016/j.surfcoat.2003.12.026
https://doi.org/10.1016/j.surfcoat.2003.12.026
Publikováno v:
Journal of Crystal Growth. 262:89-94
The effectiveness and reliability of estimating the dislocation density in GaN thin films and bulk crystals by defect selective etching in eutectic KOH/NaOH have already been successfully demonstrated. In this communication, we report the results of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c773d98210f94dd1f002083427c4bf5
https://doi.org/10.1016/j.jcrysgro.2003.10.051
https://doi.org/10.1016/j.jcrysgro.2003.10.051
Autor:
J. Y. Lin, Jharna Chaudhuri, Bin Liu, Z. U. Rek, D Zhuang, F Mogal, Hongxing Jiang, Martin Kuball, H.E. Huey, James H. Edgar
Publikováno v:
Journal of Crystal Growth. 262:168-174
AlN single crystal platelets up to 2×3 mm 2 and needles 1 mm in diameter and 3 mm in length were successfully grown by directly heating the source materials with microwaves. The process temperature was over 2000°C and the pressure was kept constant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d17a99d6b7e2845af3fe643e3d3832b
https://doi.org/10.1016/j.jcrysgro.2003.10.080
https://doi.org/10.1016/j.jcrysgro.2003.10.080
Publikováno v:
Journal of Applied Physics. 92:7183-7192
A series of Cr films with varying thicknesses have been prepared using a multiple moving substrate deposition geometry. These films have been investigated with several experimental techniques, including synchrotron x-ray scattering, pole figures, ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9eeef50dd8cd07969ef390bfedf36776
https://doi.org/10.1063/1.1521791
https://doi.org/10.1063/1.1521791
Publikováno v:
Surface and Coatings Technology. 132:124-129
The residual stress varied substantially as a function of thickness in a series of 2.5 to 500 nm thick Mo films. Films were sputter deposited onto Si wafers with native oxide, and the residual stress was measured using double crystal diffraction topo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::237c07d6a400af833ea49ac237a62a92
https://doi.org/10.1016/s0257-8972(00)00908-7
https://doi.org/10.1016/s0257-8972(00)00908-7
Publikováno v:
Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences. 357:2681-2688
The adhesion of thin polycrystalline metallic Ta films to Si wafer substrates was studied in situ under real–time conditions using white–beam synchrotron Laue transmission diffraction topography with simultaneous radiographic imaging. The observa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0599f0a396d9b8fc67452ecf63fcfd1
https://doi.org/10.1098/rsta.1999.0457
https://doi.org/10.1098/rsta.1999.0457