Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Z. T. Kenzhaev"'
Publikováno v:
Physical Sciences and Technology, Vol 10, Iss 1 (2023)
The formation of clusters of impurity atoms in the crystal lattice of semiconductor materials is of great interest. The formation of nanoclusters with controlled parameters in the lattice of semiconductor materials can serve as the basis for the tech
Externí odkaz:
https://doaj.org/article/e83f157238774295b3f7f2d4abf3a9aa
Publikováno v:
Surface Engineering and Applied Electrochemistry. 59:210-215
Publikováno v:
Inorganic Materials. 58:1-6
Publikováno v:
Physics of the Solid State. 64:154-156
Autor:
M. K. Bakhadyrkhanov, Z. T. Kenzhaev
Publikováno v:
Technical Physics. 66:851-856
Autor:
G. A. Ikhtiyarova, Kh. F. Zikrillayev, Z. T. Kenzhaev, D. Melebaev, S. B. Isamov, M. K. Bakhadyrkhanov
Publikováno v:
Applied Solar Energy. 56:13-17
By the diffusion obtained the Si 〈B, P〉 (group I) and Si 〈B, P + Ni〉 (group II) structures with deep p–n-junctions. It is demonstrated that the parameters of silicon photovoltaic cells with deep p–n-junctions are improved due to nickel do
Publikováno v:
Technical Physics Letters. 45:959-962
It has been shown that the doping of the front side of a solar cell with a deep-level p–n junction with nickel atoms increases short-circuit current density Jsc by 89% and open-circuit voltage Voc by 19.7%. Additional thermal treatment at 700°C fo