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pro vyhledávání: '"Z. Swiatek"'
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Autor:
Rafal Jakiela, S. A. Dvoretsky, M. V. Yakushev, A. V. Voitsekhovskii, A. G. Korotaev, K. D. Mynbaev, Z. Swiatek, N. N. Mikhailov, V. S. Varavin, I. I. Izhnin, O. I. Fitsych
Publikováno v:
Journal of electronic materials. 2021. Vol. 50, № 6. P. 3714-3721
Accumulation of arsenic implantation-induced donor defects in heteroepitaxial Hg1−xCdxTe structures with the composition of the active layer xa = 0.30 was studied with the use of the Hall-effect measurements and mobility spectrum analysis. The stud
Autor:
A. V. Voitsekhovskii, H. V. Savytskyy, D. V. Marin, I. I. Izhnin, O. I. Fitsych, M. V. Yakushev, V. S. Varavin, Jerzy Morgiel, A. G. Korotaev, K. D. Mynbaev, O. Yu. Bonchyk, Z. Swiatek
Publikováno v:
Applied nanoscience. 2022. Vol. 12, № 3. P. 395-401
Bright–field and high-resolution transmission electron microscopy were used for nano-scale structural studies of defects induced by implantation of arsenic ions with 190 keV energy and 1014 cm–2 fluence in n and p-type Hg0.78Cd0.22Te films grown
Autor:
M. V. Yakushev, Z. Swiatek, O. Yu. Bonchyk, H. V. Savytskyy, A. G. Korotaev, K. D. Mynbaev, A. V. Voitsekhovskii, N. N. Mikhailov, Jerzy Morgiel, Ihor I. Syvorotka, D. V. Marin, Rafal Jakiela, V. S. Varavin, I. I. Izhnin, O. I. Fitsych
Publikováno v:
Applied nanoscience. 2020. Vol. 10, № 12. P. 4971-4976
Optical reflectance and bright-field and high-resolution transmission electron microscopy studies of radiation damage induced by implantation of arsenic ions with 190 keV and 350 keV energy and 1014 cm–2 fluence in molecular-beam epitaxy-grown Hg0.
Autor:
Nikolay N. Mikhailov, A. V. Voitsekhovskii, Rafal Jakiela, A. G. Korotaev, K. D. Mynbaev, V. S. Varavin, I. I. Izhnin, O. I. Fitsych, S. A. Dvoretsky, M. V. Yakushev, Z. Swiatek
Publikováno v:
Infrared physics and technology. 2021. Vol. 114. P. 103665 (1-7)
Carrier species in arsenic-implanted p– and n–type Hg0.7Cd0.3Te films grown by molecular-beam epitaxy were investigated with the use of the Hall-effect studies and mobility spectrum analysis. The implantation was performed with ion energy 190 or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e00470e8f7a0ec00c8f17d33192b88b6
https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000901902
https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000901902
Autor:
N. N. Mikhailov, H. V. Savytskyy, A. G. Korotaev, K. D. Mynbaev, Z. Swiatek, O. Yu. Bonchyk, M. V. Yakushev, A. V. Voitsekhovskii, S. A. Dvoretsky, V. S. Varavin, Y. Morgiel, I. I. Izhnin, O. I. Fitsych
Publikováno v:
Applied nanoscience. 2020. Vol. 10, № 8. P. 2867-2871
Bright-field and high-resolution transmission electron microscopy and microdiffraction have been used for the study of defects in two HgTe/HgCdTe single quantum well (QW) structures grown by molecular beam epitaxy on GaAs substrates with ZnTe and CdT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2a20b6f6a8302510856e81d5a5cdcae3
http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000656168
http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000656168
Autor:
Ivan Uzhakov, Vasiliy Shvets, K. D. Mynbaev, N. N. Mikhailov, Jerzy Morgiel, Danil Ikusov, Z. Swiatek, S. A. Dvoretsky, Olexander Bonchyk, I. I. Izhnin, Piotr Dłużewski
Publikováno v:
Physica status solidi B. 2020. Vol. 257, № 5. P. 1900598 (1-5)
Transmission electron microscopy (TEM) is used for the study of interfaces in two HgTe/HgCdTe single quantum-well (QW) structures grown by molecular beam epitaxy on GaAs substrates. The studies are conducted in bright-field and scanning/high-angle an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cbb321e2918f50c14963fe8487393f5e
http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000792276
http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000792276
Autor:
O. I. Fitsych, Stanislav M. Dzyadukh, Jerzy Morgiel, I. I. Izhnin, M. V. Yakushev, H. V. Savytskyy, A. V. Voitsekhovskii, A. G. Korotaev, V. S. Varavin, Sergey N. Nesmelov, K. D. Mynbaev, S. A. Dvoretsky, N. N. Mikhailov, Z. Swiatek, O. Yu. Bonchyk
Publikováno v:
Surface and coatings technology. 2020. Vol. 393. P. 125721 (1-5)
Results of the Hall-effect studies of surface properties of n–type HgCdTe films modified with arsenic ion implantation and thermal annealing are reported on. A complete annihilation of implantation-induced extended defects (dislocation loops), quas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f142793fac8c3c95947cc6be4fd4b8a0
http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000794657
http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000794657
Publikováno v:
Corrosion Science. 135:107-119
ZnMo coatings with Mo content from 0.5 to 6 wt.% were electrodeposited on steel from citrate electrolytes. Electrochemical studies of their corrosion behaviour performed in a 5 wt.% NaCl showed that the low Mo content (∼0.5–1.5 wt.%) enhances cor
Autor:
D. V. Marin, H. V. Savytskyy, A. V. Voitsekhovskii, Z. Swiatek, S. A. Dvoretsky, O. Yu. Bonchyk, Y. Morgiel, M. V. Yakushev, I. I. Izhnin, O. I. Fitsych, V. S. Varavin, A. G. Korotaev, K. D. Mynbaev
Publikováno v:
Applied nanoscience. 2019. Vol. 9, № 5. P. 725-730
Radiation damage and its transformation under annealing were studied with bright-field and high-resolution transmission electron microscopy for arsenic-implanted HgCdTe films with graded-gap surface layers. In addition to typical highly defective lay