Zobrazeno 1 - 10
of 47
pro vyhledávání: '"Z. Spika"'
Publikováno v:
Physical Review B. 62:15826-15833
One main goal of the present work was to perform specific metal-organic vapor-phase epitaxy experiments to prove existing models for the fundamental process of superlattice ordering in the model system (GaIn)P. Applying a modulated-growth regime, we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7c10461c50b28f98dc7442312d79907
https://doi.org/10.1103/physrevb.62.15826
https://doi.org/10.1103/physrevb.62.15826
Publikováno v:
Journal of Applied Physics. 88:3341-3348
In contrast to the continuous metalorganic vapor phase epitaxy of (GaIn)P, a modulated growth process yields higher degrees of superlattice ordering along with a more complex domain hierarchy. Using cross-sectional as well as plan view transmission e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12946c120f54dea6965ff0c74850db42
https://doi.org/10.1063/1.1288698
https://doi.org/10.1063/1.1288698
Autor:
Jörg Lorberth, M. Müller, Ernst O. Göbel, H. Protzmann, Z. Spika, Wolfgang Stolz, F. Höhnsdorf
Publikováno v:
Journal of Crystal Growth. 170:155-160
In this study, the use of novel, liquid, organic arsenic precursors as substitutes for the highly toxic hydride gas arsine (AsH3) in low pressure metalorganic vapor phase epitaxy (LP-MOVPE) of (GaIn)As lattice matched on InP has been investigated. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27d8b06fa11cf732f46b284c0dec3f63
https://doi.org/10.1016/s0022-0248(96)00640-9
https://doi.org/10.1016/s0022-0248(96)00640-9
Metalorganic vapor phase epitaxy of InP using the novel P-source ditertiarybutyl phosphine (DitBuPH)
Autor:
G. Zimmermann, Ernst O. Göbel, B. Spill, Jörg Lorberth, P. Gimmnich, H. Protzmann, Wolfgang Stolz, Z. Spika
Publikováno v:
Journal of Electronic Materials. 25:443-448
A variety of monoalkyl, dialkyl as well as trialkyl P-compounds, containing ethyl, isopropyl, and tertiarybutyl rest groups have been synthesized and used for the growth of InP bulk epitaxial layers by low pressure metalorganic vapour phase epitaxy.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68cce4b1404bc571e4a6d0b2066367e0
https://doi.org/10.1007/bf02666618
https://doi.org/10.1007/bf02666618
Autor:
G. Zimmermann, S. Weiß, A. Bock, A. Salzmann, Ernst O. Göbel, Z. Spika, U. Sudjadi, Jörg Lorberth, Wolfgang Stolz, A. Greiling, P. Gimmnich, R. Kassing
Publikováno v:
Journal of Crystal Growth. 146:521-526
Metalorganic vapour-phase epitaxy (MOVPE) growth experiments for GaAs and (AlGa)As have been performed as a function of growth temperature and V/III ratio using the new alternative precursor diethyl-tert-butylarsin (DEtBAs) in combination with trimet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::427c9305581680dc47f5c3394d4e9625
https://doi.org/10.1016/0022-0248(94)00574-5
https://doi.org/10.1016/0022-0248(94)00574-5
Autor:
Jörg Lorberth, Z. Spika, A. Salzmann, A. Greiling, Ernst O. Göbel, Wolfgang Stolz, P. Gimmnich, T. Marschner, B. Spill, G. Zimmermann
Publikováno v:
Journal of Crystal Growth. 145:512-519
The novel β-hydride eliminating trialkyl-As compounds diethyl-tertiarybutyl-As (DEtBAs) and diethyl-isopropyl-As (DEiPrAs) has been used as less toxic substitutes for AsH 3 for both the cleaning of oxide passivated GaAs wafers prior to growth and th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b75e94f802d5a07418347bb58de26a6
https://doi.org/10.1016/0022-0248(94)91100-2
https://doi.org/10.1016/0022-0248(94)91100-2
Autor:
P. Gimmnich, J. Scherb, Wolfgang Stolz, M. Müller, Z. Spika, H. Protzmann, W. Korber, Jörg Lorberth, Ernst O. Göbel, F. Hohnsdorf
Publikováno v:
Proceedings of 8th International Conference on Indium Phosphide and Related Materials.
In this work the use of the novel ditertiarybutyl-phosphorous and arsenic precursors for low pressure metalorganic vapor phase epitaxy (LP-MOVPE) application with respect to InP/(GaIn)As-heterostructures and pin-detector device structures has been st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b66b43a3fbcaff8f45e630a438924b3
https://doi.org/10.1109/iciprm.1996.492285
https://doi.org/10.1109/iciprm.1996.492285
Autor:
H. Protzmann, Z. Spika, B. Spill, G. Zimmermann, W. Stolz, E.O. Gobel, P. Gimmnich, J. Lorberth
Publikováno v:
Seventh International Conference on Indium Phosphide and Related Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62a5595f0f1d756972a6bcd77cf805e8
https://doi.org/10.1109/iciprm.1995.522092
https://doi.org/10.1109/iciprm.1995.522092
Autor:
A. Greiling, Gunnar Zimmermann, Ernst O. Göbel, Wolfgang Stolz, Z. Spika, Ralf Becker, P. Gimmnich, T. Marschner, Jörg Lorberth, Andreas Salzmann
Publikováno v:
Japanese Journal of Applied Physics. 35:2035
Thermal decomposition studies and low pressure metalorganic vapour phase epitaxy (MOVPE) growth experiments have been performed using novel, less toxic arsinetrialkyl sources, which decompose by the β-hydride elimination process. Therefore, As–H f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36d52040b554c7733a5e6d9f75c7a6da
https://doi.org/10.1143/jjap.35.2035
https://doi.org/10.1143/jjap.35.2035
Conference
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