Zobrazeno 1 - 10
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pro vyhledávání: '"Z. Shiolashvili"'
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Autor:
D. Jishiashvili, X. Devaux, V. Gobronidze, Nino Makhatadze, Vassilios Kapaklis, C. Politis, Z. Shiolashvili, E. R. Kutelia
Publikováno v:
Advanced Science Letters. 2:40-44
A simple pyrolytic: technology was developed in this paper for producing Germanium nitride nanowires. Hydrazine was used as the nitriding agent, while the 3 mol.% of water diluted in it served for ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12ff50feae8e6415e5d3c6423bbbbd7d
https://doi.org/10.1166/asl.2009.305
https://doi.org/10.1166/asl.2009.305
Autor:
Jishiashvili, D., Shiolashvili, Z. Shiolashvili, Makhatadze, N., Jishiashvili, A., Gobronidze, V., Sukhanov, D.
InP/Ga2O3 core-shell nanowires were grown on Si substrate at 400 ºC in the hydrazine (N2H4) vapor diluted with 3 mol. % H2O. The crystalline InP and solid Ga served as source materials for the growth of nanowires. According to TEM and EDX data the n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0460a6448d6d32ec0208be9c2d59ca49
Publikováno v:
physica status solidi (a). 202:1778-1785
The effective surface passivation is a key to achieve useful metal–insulator–semiconductor devices on GaAs. In this work, the composition and structure of the pyrolytic GeOxNy film deposited on GaAs in the hydrazine vapour has been studied by Aug
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7b36ce6b2ef8ad771b3b7f183966677
https://doi.org/10.1002/pssa.200420026
https://doi.org/10.1002/pssa.200420026
Publikováno v:
2009 International Semiconductor Conference.
The two types of single-crystalline α-Ge 3 N 4 nanowires (NWs) were synthesized at 550°C by annealing the crystalline Ge sample in the hydrazine vapor containing 3 mol.% of water. The mass transfer was accomplished by volatile GeO molecules. The ta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84dc61e1c2745b2ca15ad7256f2dc49e
https://doi.org/10.1109/smicnd.2009.5336589
https://doi.org/10.1109/smicnd.2009.5336589
Autor:
R. Janelidze, D. Jishiashvili, Z. Shiolashvili, I. Nakhutsrishvili, E. Kutelia, V. Gobronidze, L. Mosidze, M. Katsiashvili
Publikováno v:
1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings.
Application of amorphous, high resistivity O- and N-doped Ge films is proposed to solve some radiation hardness problems. The new type of insulating a-Ge:(O,N) films makes it possible to increase the radiation hardness of metal-insulator-semiconducto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b94d3f0a63c1ff9f07dbc87e87cdfe62
https://doi.org/10.1109/smicnd.1996.557417
https://doi.org/10.1109/smicnd.1996.557417
Publikováno v:
2001 International Semiconductor Conference. CAS 2001 Proceedings (Cat. No.01TH8547).
Auger electron spectroscopy (AES) was used to study the solid phase surface reactions and Ge diffusion process during the thermal treatment (500-750/spl deg/C) of GeO/sub 2//(111)GaAs structures. Different results were obtained for the A and B surfac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ce2df3793ff61a0566d03bcbb8c6630
https://doi.org/10.1109/smicnd.2001.967476
https://doi.org/10.1109/smicnd.2001.967476
Publikováno v:
2002 Proceedings. 8th International Advanced Packaging Materials Symposium (Cat. No.02TH8617).
The sublimation of GeO molecules formed by the solid phase reaction between a-Ge and a-GeO/sub 2/ films (Ge+GeO/sub 2/=2GeO?) was studied using vacuum microbalance. The c-Si/Ge/GeO/sub 2/, c-Si/GeO/sub 2/ /Ge, c-Ge/GeO/sub 2/ and c-Si/GeO/GeO/sub 2/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8fa852d7424ab6ef490c450d873afc3
https://doi.org/10.1109/isapm.2002.990372
https://doi.org/10.1109/isapm.2002.990372
Akademický článek
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Akademický článek
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