Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Z. Sh. Yanovitskaja"'
Publikováno v:
Computational Materials Science. 36:180-183
Speeding up of step density oscillations (SDO) damping on singular surface with Schwoebel barriers was demonstrated by Monte Carlo simulation. Estimation of Schwoebel barrier necessary for complete absence of SDO was carried out. Increase of atomic s
Publikováno v:
Computational Materials Science. 36:36-41
Using kinetic MC model simulation of ALD process is carried out. Influence of surface substrate relief and sticking center concentration on growth rate of ALD films at initial stages of growth are investigated. Relationship between growth rate and nu
Publikováno v:
Semiconductors. 37:649-655
Using the three-dimensional Monte Carlo model, the effect of monovacancies on the diffusion exchange between the steps on the (111) surface of a diamond-like crystal during sublimation was investigated. The critical terrace width L cr (the distance f
Publikováno v:
Nanotechnology. 12:413-416
Self-assembled 3D island formation during epitaxial growth was investigated using kinetic Monte Carlo models. Schwoebel barriers for the explanation of 3D kinetic growth were suggested. The diffusion hop probability ratio χ for atom hops up to atom
Publikováno v:
Thin Solid Films. 380:61-63
Investigation of steps behavior on vicinal (111) surface during sublimation was carried out using 3D-model of diamond-like crystal. Step width periodic variations predicted by Schwoebel were found by modeling. Diamond-like crystal structure results i
Publikováno v:
International Workshops and Tutorials on Electron Devices and Materials.
Kinetic of porous layers transformation during annealing was investigated using Monte Carlo simulation. Model with primitive cubic lattice was used for calculations. Time dependence of film evolution rate at initial stage of annealing process was dem
Publikováno v:
Proceedings. 6th Annual. 2005 International Siberian Workshop and Tutorials on Electron Devices and Materials, 2005..
Investigation of a minimal stable nucleus on Si(111)-7/spl times/7 surface was carried out by interatomic potential calculations and STM image analyses. Potential relief for adatom diffusion through this surface was calculated using Tersoff potential