Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Z. S. Khudayberdiev"'
Autor:
S. Dzhumanov, Z. S. Khudayberdiev
Publikováno v:
Quantum Studies: Mathematics and Foundations. 5:75-81
In this paper, we investigate the possibility of the Anderson transition for polarons, different dopants, and impurities in doped cuprates. We have developed the continuum theory of carrier self-trapping in a deformable lattice and near different dop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60c5212b4df0745d32fbed35c0116713
https://doi.org/10.1007/s40509-017-0134-x
https://doi.org/10.1007/s40509-017-0134-x
Publikováno v:
Low Temperature Physics. 42:1057-1062
Results are presented from a theoretical study of the possibility of hole carrier localization and metal-insulator transitions which show up in the temperature dependences of the magnetic susceptibility χ(T) of doped copper-oxide (cuprate) compounds
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a433e92ea5fe255bf509a847029c16a9
https://doi.org/10.1063/1.4971169
https://doi.org/10.1063/1.4971169
Publikováno v:
Ukrainian Journal of Physics. 64:322
We study the distinctive features of the metal-insulator transitions, multiscale phase separation, and evolution of coexisting insulating and metallic/superconducting phases in hole-doped cuprates. We show how these interrelated phenomena and related
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf5257a7bc5549992ce13c23bf1a25ae
https://doi.org/10.15407/ujpe64.4.322
https://doi.org/10.15407/ujpe64.4.322
Publikováno v:
Journal of Physics and Chemistry of Solids. 73:484-494
Possible mechanisms of carrier localization, metal–insulator transitions (MITs) and stripe formation in inhomogeneous hole-doped cuprates have been studied theoretically. Three distinctly different scenarios are proposed for the carrier localizatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d820ca6e8717e3486d00ed866a7e0cee
https://doi.org/10.1016/j.jpcs.2011.11.029
https://doi.org/10.1016/j.jpcs.2011.11.029
Autor:
Z. S. Khudayberdiev, S. Dzhumanov
Publikováno v:
Journal of Physics: Conference Series. 672:012017
Three distinctly different scenarios are proposed for the carrier localization in three- dimentional (3D) lightly doped cuprates in which the self-trapping and pairing of hole carriers (i) near the small-radius dopants and (ii) in a defect-free defor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81d137da05dd66ddd71fb2ef8907453b
https://doi.org/10.1088/1742-6596/672/1/012017
https://doi.org/10.1088/1742-6596/672/1/012017
Publikováno v:
Physica C: Superconductivity.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea132bc0d9c9715ab1e0c2fd35a6e33d
https://doi.org/10.1016/j.physc.2009.10.025
https://doi.org/10.1016/j.physc.2009.10.025
Publikováno v:
Physica C: Superconductivity. :1037-1038
The adequate theoretical approaches to the correlation- and disorder-induced metal–insulator transitions (MITs) (i.e., Mott and Anderson MITs) and the new MITs caused by the extrinsic self-trapping of carriers in hole-doped cuprates are developed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d05004ad29428a3d9b1e242f250bda9c
https://doi.org/10.1016/j.physc.2007.03.209
https://doi.org/10.1016/j.physc.2007.03.209
Autor:
S Dzhumanov, Z S Khudayberdiev
Publikováno v:
Journal of Physics: Conference Series; 2016, Vol. 672 Issue 1, p1-1, 1p