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pro vyhledávání: '"Z. Rivera-Alvarez"'
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Autor:
Máximo López-López, C. Guarneros, A. Ponce-Pedraza, V.M. Sánchez-Reséndiz, A. Guillén-Cervantes, Z. Rivera-Alvarez
Publikováno v:
Applied Surface Science. 258:1267-1271
GaN thin films grown by MOCVD on (0 0 0 1) Al 2 O 3 substrates at different growth pressures were characterized by field-emission scanning electron microscopy, atomic force microscopy, micro-Raman, and photoluminescence at room temperature. It was fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::109c838289c5501340467345d17428a6
https://doi.org/10.1016/j.apsusc.2011.09.089
https://doi.org/10.1016/j.apsusc.2011.09.089
Autor:
A. Guillén-Cervantes, V.H. Méndez-García, V.M. Sánchez-Reséndiz, Luis Zamora-Peredo, E. Cruz-Hernández, Y. Kudriatsev, J. S. Rojas-Ramírez, Máximo López-López, A. Pulzara-Mora, R. Contreras-Guerrero, Z. Rivera-Alvarez, S. Gallardo-Hernández
Publikováno v:
Journal of Crystal Growth. 311:1666-1670
AlGaAs/GaAs quantum wells (QWs) structures were grown by molecular beam epitaxy (MBE) on semi-insulating- and Si-doped GaAs (1 0 0) substrates subjected to different surface treatments. The substrate treatments employed were: (a) H 2 SO 4 -based chem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e59178fa40d2ff2d3b47192109737e6
https://doi.org/10.1016/j.jcrysgro.2008.11.010
https://doi.org/10.1016/j.jcrysgro.2008.11.010
Autor:
V.M. Sánchez-Reséndiz, A. Guillén-Cervantes, Máximo López-López, Z. Rivera-Alvarez, I. Koudriavtsev
Publikováno v:
Applied Surface Science. 255:4742-4746
GaAs (1 0 0) substrates prepared in a quartz chamber under a H2/As4 flux, and then exposed to air were used for the subsequent growth of GaAs–AlGaAs single quantum wells by molecular beam epitaxy. The substrates prepared by this method showed atomi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32c89e95035f9a6bbd4938fe409f8b05
https://doi.org/10.1016/j.apsusc.2008.09.002
https://doi.org/10.1016/j.apsusc.2008.09.002
Publikováno v:
Solid-State Electronics. 47:759-762
The effect of persistent photoconductivity (PPC) and their associated deep centers have been studied for Zn 1− x Cd x Se (0.10 x
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cea7a97f286f62cea7421294e53fb02
https://doi.org/10.1016/s0038-1101(02)00341-6
https://doi.org/10.1016/s0038-1101(02)00341-6
Autor:
Z. Rivera-Alvarez, A. Guillén-Cervantes, I. Hernández-Calderón, E. López-Luna, Máximo López-López
Publikováno v:
Thin Solid Films. 373:159-163
We have studied the desorption mechanism of Ga- and As-oxides on GaAs (100) by subjecting the substrates to two thermal processes in ultra high vacuum (UHV) conditions. The first process was an outgassing at 350°C, and the second process consisted o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e95aa25aef20ae9bd327d158a3fefcd
https://doi.org/10.1016/s0040-6090(00)01126-3
https://doi.org/10.1016/s0040-6090(00)01126-3
Autor:
R. Ramírez-Bon, L Hernández, A Picos-Vega, Z Rivera-Alvarez, O. Zelaya-Angel, Jorge Roberto Vargas-García, M. Becerril
Publikováno v:
Solid State Communications. 113:621-625
In this work, we study the nature and behavior of the persistent photoconductivity (PPC) in CdTe–In films grown by co-sputtering of CdTe–In–Cd targets. It was found that only when In atoms are substantially incorporated into CdTe films, the per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56a0383bee281e4476095649c31d1b4b
https://doi.org/10.1016/s0038-1098(99)00545-1
https://doi.org/10.1016/s0038-1098(99)00545-1
Autor:
A. Guillén-Cervantes, Z. Rivera-Alvarez, V.M. Sánchez-Reséndiz, Máximo López-López, A. Escobosa
Publikováno v:
Thin Solid Films. 515:3635-3637
We report on the influence of the chemical etching in the step bunching formation on GaAs (100) 0.2° off and GaAs (100) 2° off toward surfaces after the oxide desorption process of the substrates at high temperatures under an H 2 ambient. The step
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d339c31ea80c713b5e565180c63d578a
https://doi.org/10.1016/j.tsf.2006.10.004
https://doi.org/10.1016/j.tsf.2006.10.004
Publikováno v:
Journal of Crystal Growth. 193:528-534
We report on the peculiar formation of hillocks during the molecular beam epitaxial (MBE) growth of ZnSe on GaAs(1 0 0) substrates. By heating the substrates up to ∼550°C prior to the growth, a clean Ga-rich surface was obtained as confirmed by hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc4f159d524e290a711f28b8de47e2e4
https://doi.org/10.1016/s0022-0248(98)00515-6
https://doi.org/10.1016/s0022-0248(98)00515-6
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 14:2269-2274
Using ZnCl2 as a doping source, we have grown epitaxial layers of Cl‐doped ZnSe onto GaAs(100) substrates at a temperature of 285 °C by molecular beam epitaxy. The carrier concentration was controlled by the ZnCl2 source temperature. The maximum c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::208607be6e7cff36c8f5940aa3dc3cd2
https://doi.org/10.1116/1.580059
https://doi.org/10.1116/1.580059