Zobrazeno 1 - 10
of 71
pro vyhledávání: '"Z. Ouennoughi"'
Publikováno v:
Alexandria Engineering Journal, Vol 57, Iss 4, Pp 3671-3681 (2018)
Nanostructured ZnO thin films were deposited on p-Si (1 1 1) substrates using a new electrodeposition method. Electrical and sensing properties were investigated. Variations of the resistance measured between two points of the ZnO film, have shown a
Externí odkaz:
https://doaj.org/article/88e6c2df9af64f02978785d246c9a7c9
Autor:
Z. Ouennoughi, S. Toumi
Publikováno v:
Indian Journal of Physics. 93:1155-1162
The temperature dependence of the parameters related to the barrier height inhomogeneities for Mo/4H–SiC Schottky diode in 298–498 K temperature range has been investigated. Due to the barrier height inhomogeneities that prevail at the interface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08af55d64a0731ec7684e1ff6d79a0d4
https://doi.org/10.1007/s12648-019-01393-y
https://doi.org/10.1007/s12648-019-01393-y
Autor:
Mathias Rommel, T. H. Nouibat, Z. Ouennoughi, D. Chikouch, N. Rouag, Zitouni Messai, Lothar Frey
Publikováno v:
Microelectronics Reliability. 91:183-187
In this paper, the conduction mechanisms in MOS structures are investigated using Normalized Differential Conductance (NDC). It is shown that NDC can be applied successfully for the determination of conduction mechanism parameters in MOS devices. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb655a4683b18e5518adaae5d217c069
https://doi.org/10.1016/j.microrel.2018.10.001
https://doi.org/10.1016/j.microrel.2018.10.001
Publikováno v:
Alexandria Engineering Journal, Vol 57, Iss 4, Pp 3671-3681 (2018)
Nanostructured ZnO thin films were deposited on p-Si (1 1 1) substrates using a new electrodeposition method. Electrical and sensing properties were investigated. Variations of the resistance measured between two points of the ZnO film, have shown a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc5decdc9dec610f9c21f6c1dc8a1cb4
https://doi.org/10.1016/j.aej.2018.01.017
https://doi.org/10.1016/j.aej.2018.01.017
Akademický článek
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Publikováno v:
Solid-State Electronics. 122:56-63
Current conduction mechanisms through a Metal–Oxide–Semiconductor structure are characterized via Fowler–Nordheim (FN) plots. The extraction of the FN parameters like the electron/hole effective mass in oxide m ox and in semiconductor m sc , th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d035425906fda9ed34a22eaa2b6bd182
https://doi.org/10.1016/j.sse.2016.04.007
https://doi.org/10.1016/j.sse.2016.04.007
Publikováno v:
Physica B: Condensed Matter. 585:412125
The current voltage characteristics versus temperature were measured in MOS (Metal Oxide Semiconductor) capacitor structures in the range of [303−423] K. These measurements were investigated by Fowler-Nordheim (FN) tunneling current characterized b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9225b8f1d49d01eddda62bc77a7fe2d
https://doi.org/10.1016/j.physb.2020.412125
https://doi.org/10.1016/j.physb.2020.412125
Publikováno v:
Microelectronics Reliability. 55:1028-1034
The present work presents an evaluation approach which enables the in-depth analysis of current–voltage ( I – V ) characteristics of MIS devices to determine their current transport mechanisms using a multidimensional minimization system program.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9dca5cbe5832d02df68986ccef709df
https://doi.org/10.1016/j.microrel.2015.05.001
https://doi.org/10.1016/j.microrel.2015.05.001
Publikováno v:
Physica B: Condensed Matter. 456:176-181
In the present work we investigate the forward current–voltage (I–V) characteristics, over a wide temperature range 298–498 K, of Mo/4H–SiC Schottky diode for which aluminum ion implantation was used to create the high resistivity layer formi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ad1aa006e7d799bb257226f3fc6d57e
https://doi.org/10.1016/j.physb.2014.08.031
https://doi.org/10.1016/j.physb.2014.08.031
Publikováno v:
Microelectronics Reliability. 53:1841-1847
The charge conduction mechanisms in Metal-Oxide-Semiconductor (MOS) capacitors formed on n-type 4H-silicon carbide (SiC) using thermally grown silicon dioxide (SiO 2 ) as gate dielectrics are analyzed. The possible conduction mechanisms have been ide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::66cb4b67a93aead1d3b49f3a962980a3
https://doi.org/10.1016/j.microrel.2013.06.009
https://doi.org/10.1016/j.microrel.2013.06.009