Zobrazeno 1 - 10
of 173
pro vyhledávání: '"Z. Ouarch"'
Autor:
D. Floriot, U. Meiners, Helmut Jung, V. Brunel, Marc Camiade, Michael Hosch, H. Blanck, Z. Ouarch-Provost, J. Splettstößer, C. Chang, Benoit Lambert, J. Grünenpütt
Publikováno v:
2014 9th European Microwave Integrated Circuit Conference.
Autor:
Olivier Jardel, Stéphane Piotrowicz, Tibault Reveyrand, Raphaël Aubry, Didier Floriot, N. Sarazin, Eric Chartier, Erwan Morvan, Z. Ouarch, Jean-Claude Jacquet, G. Callet, Sylvain Delage
Publikováno v:
2010 IEEE MTT-S International Microwave Symposium.
This paper presents the results obtained on X-Band GaN MMICs developed in the frame of the Korrigan project launched by the European Defense Agency. GaN has already demonstrated excellent output power levels, nevertheless demonstration of excellent P
Autor:
Z. Ouarch, T. Dean, Tibault Reveyrand, Erwan Morvan, M. A. Di-Forte Poisson, Eric Chartier, Raphaël Aubry, N. Sarazin, D. Thenot, T. Bouvet, Jean-Claude Jacquet, Olivier Jardel, Sylvain Delage, D. Lancereau, Didier Floriot, Y. Gourdel, O. Drisse, Christian Dua, Audrey Martin, J.O. McLean, S. Bansropun, A.J. Hydes, Stéphane Piotrowicz, G. Lecoustre, M. Richard
Publikováno v:
IEEE Compound Semiconductor IC Symposium CSICS 2008
IEEE Compound Semiconductor IC Symposium CSICS 2008, Oct 2008, United States. pp 1-4
IEEE Compound Semiconductor IC Symposium CSICS 2008, Oct 2008, United States. pp 1-4
This paper presents the results obtained on X-Band GaN MMICs developed in the frame of the Kerrigan project launched by the European Defense Agency. A new step was achieved, 58 W of output power with 38% PAE in X-Band were obtained using an 18 mm 2 2
Autor:
Christophe Chang, P. Chaumas, D. Bouw, Z. Ouarch, J. Gruenenpuett, Veronique Serru, Marc Camiade, T. Huet
Publikováno v:
2008 38th European Microwave Conference.
A monolithic two-stage high power, high efficiency and high robustness amplifier was developed for X-band applications. The combination of the improvement of the UMS Power PHEMT technology called PPH25X in term of breakdown, and the adapted design re
Publikováno v:
IEEE Microwave and Guided Wave Letters. 8:102-104
In this work, a method for the direct extraction of a field-effect transistor (FET) distributed model is presented. This technique makes use of both pulsed I-V and pulsed S-parameter measurements. Results given are very efficient, especially in terms
Publikováno v:
33rd European Microwave Conference, 2003.
Modern remote sensing systems and radars are more and more based on electronically steered antennas. Instead of using one high power tube, each radiating element must contain a full T/R module allowing an individual modulation of amplitude and phase
Publikováno v:
33rd European Microwave Conference Proceedings (IEEE Cat. No.03EX723C).
Publikováno v:
1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192).
This paper presents MESFET measurement methods based on pulsed measurements that separate trapping and thermal effects. Derived from these measurements, a model of the trapping effect is determined, as well as a thermal model. The proposed nonlinear
Publikováno v:
1997 IEEE MTT-S International Microwave Symposium Digest.
For the first time, a FET nonlinear model, distributed along the gate length and extracted from pulsed I(V) and pulsed S-parameters measurements is presented. This model has led to a better prediction of power saturation mechanism and offers promisin
Publikováno v:
Camiade, M. ; Domnesque, D. ; Ouarch, Z. ; Sion, A. (2000) Fully MMIC-Based Front End for FMCW Automotive Radar at 77GHz. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
This paper gives the last UMS developments in the field of automotive radar at 77GHz. A complete front-end based on four MMICs is described, it is dedicated to FMCW radar for Collision Warning/Avoidance systems. A detailed characterization results ar