Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Z. M. Simon Li"'
Publikováno v:
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).
Two-dimensional (2D) modeling is reported for InGaP/GaAs/InGaAs four-junction solar cell with tunnel junctions. The cell basic physical properties were demonstrated. The simulated results indicate one-sun efficiency about 40.1% with short-circuit cur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5d31c34138094e0c5b79db7086ac9c4
https://doi.org/10.1109/nusod.2019.8806906
https://doi.org/10.1109/nusod.2019.8806906
Publikováno v:
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).
In this paper, the FDFD is used to analyze Vertical Cavity Surface Emitting Laser (VCSEL). Based on the structure of the VCSEL, two main models can be used; the 2.5D and the 3D Finite Difference Frequency Domain (FDFD). The full vectorial solver is w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e47a11d52d325d42a049f183ca5396b
https://doi.org/10.1109/nusod.2019.8806850
https://doi.org/10.1109/nusod.2019.8806850
Publikováno v:
Semiconductor Lasers and Applications VIII.
In this paper, the optical problem of the Vertical Cavity Surface Emitting Laser (VCSEL) is analyzed in details. Taking advantage of the VCSEL layer structure, Maxwell’s equation is discretized on uniform Yee grid, and the rigorous full vectorial F
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74c44277b268b332dcb8db7bf3f1dbef
https://doi.org/10.1117/12.2500933
https://doi.org/10.1117/12.2500933
Publikováno v:
IEEE Journal of Quantum Electronics. 51:1-5
The GaN-based light-emitting diodes (LEDs) with hemisphere patterned sapphire substrate (PSS) have been investigated numerically using a combined method of ray tracing and finite-difference time-domain techniques based on Poynting vector. Our method
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f93a986bebfd3dc1da65ed35ae08d39d
https://doi.org/10.1109/jqe.2015.2408635
https://doi.org/10.1109/jqe.2015.2408635
Autor:
Z. M. Simon Li
Publikováno v:
Journal of Computational Electronics. 14:409-415
We propose a device modeling theory based on an improved drift---diffusion solution that is suitable for simulation of the efficiency droop effect in GaN LED. Our theory modifies the drift---diffusion transport by adding a non-local carrier transport
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2495106a86a8b3011dae5c4a8177a7ec
https://doi.org/10.1007/s10825-015-0693-1
https://doi.org/10.1007/s10825-015-0693-1
Publikováno v:
Optical and Quantum Electronics. 48
GaN-based multiple quantum well light-emitting diodes (LEDs) with the conventional, graded and two-step graded AlGaN last quantum barriers (LQBs) are investigated numerically. The simulation results show that the LED with two-step graded AlGaN LQB ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81b64d9857a8524d0f719f498198fc49
https://doi.org/10.1007/s11082-016-0785-6
https://doi.org/10.1007/s11082-016-0785-6
Autor:
Wei Shi, Behnam Faraji, Mark Greenberg, Jesper Berggren, Yu Xiang, Mattias Hammar, Michel Lestrade, Zhi-Qiang Li, Z. M. Simon Li, Lukas Chrostowski
Publikováno v:
Optical and Quantum Electronics. 42:659-666
A multiple quantum well (MQW) transistor vertical-cavity surface- emitting laser (T-VCSEL) is designed and numerically modeled. The impor- tant physical models and parameters are discussed and validated by modeling a conventional VCSEL and comparing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::984e9c91e373141e879307baeafe837c
https://doi.org/10.1007/s11082-011-9444-0
https://doi.org/10.1007/s11082-011-9444-0
Publikováno v:
physica status solidi c. 4:1641-1645
In this work, based on the advanced drift and diffusion model with commercial software, the Crosslight APSYS, InP/InGaAs separate absorption, grading, charge and multiplication APDs for high bit-rate operation have been modeled. Basic physical quanti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4eeab85c5b087ad922e6ebc46358119
https://doi.org/10.1002/pssc.200674253
https://doi.org/10.1002/pssc.200674253
Publikováno v:
physica status solidi c. 4:1637-1640
In this work, two-dimensional simulation has been performed on the triple-junction (TJ) GaInP/GaAs/Ge solar cell devices based on the Crosslight APSYS with improved tunnel junction model. The APSYS simulator solves several interwoven equations includ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bf75abf5ea3a5a311c17275f4387939
https://doi.org/10.1002/pssc.200674271
https://doi.org/10.1002/pssc.200674271
Publikováno v:
physica status solidi c. 4:1694-1697
In this work we use the PROCOM sofware to model Mg doped GaN film growth by MOCVD. The 2/3D conservation equations of mass, energy, momentum and species are solved by the nonsymmetric conjugate gradient method with block preconditioning (H. C. Elman,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b313ab542b423f669cc0deb12cf1709f
https://doi.org/10.1002/pssc.200674289
https://doi.org/10.1002/pssc.200674289