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pro vyhledávání: '"Z. Liliental"'
Akademický článek
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Publikováno v:
Microscopy of Semiconducting Materials 2003 ISBN: 9781351074636
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbcfe16b142e001cb946e3119c68ea1c
https://doi.org/10.1201/9781351074636-41
https://doi.org/10.1201/9781351074636-41
Kniha
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Autor:
Z. Liliental-Weber, Paolo Visconti, Feng Yun, T. King, Jacek B. Jasinski, C. W. Litton, Hadis Morkoç, A. A. Baski, Daming Huang, Michael A. Reshchikov
Publikováno v:
physica status solidi (b). 228:543-547
Wurtzitic GaN epilayers having both Ga and N-polarity were grown by reactive molecular beam epitaxy (MBE) using a plasma-activated nitrogen source on c-plane sapphire. The polarities were verified by convergent beam electron diffraction (CBED). High-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::821a44f9764b5637879873752a824688
https://doi.org/10.1002/1521-3951(200111)228:2<543::aid-pssb543>3.0.co
https://doi.org/10.1002/1521-3951(200111)228:2<543::aid-pssb543>3.0.co
Autor:
J.-C. Pesant, C. Armand, Gérard Benassayag, Marc Respaud, A. Mari, A. Serres, Alain Claverie, Z. Liliental-Weber
Publikováno v:
Materials Science and Engineering: B. 101:119-123
Ferromagnetic (FM) nanostructures embedded in semiconductors are of fundamental interest since their physical properties could be used in new devices such as memories, sensors or spintronics. In this work, we present results obtained on the synthesis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4f19143579ddc8b0a11593eabf4aa46
https://doi.org/10.1016/s0921-5107(02)00676-1
https://doi.org/10.1016/s0921-5107(02)00676-1
Autor:
A. Serres, Alain Claverie, Marc Respaud, Gérard Benassayag, J.-C. Pesant, C. Armand, A. Mari, Z. Liliental-Weber
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 17:371-375
Ferromagnetic (FM) nanostructures embedded in semiconductors are attracting interest because their physical properties could be used in new devices such as memories, sensors or more generally involving “spintronics”. In this work, we will present
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50b184dd39974d4f43b181942006e147
https://doi.org/10.1016/s1386-9477(02)00815-9
https://doi.org/10.1016/s1386-9477(02)00815-9
Autor:
J. B. Barner, S.-H. Lim, Z. Liliental-Weber, P. M. Asbeck, T. E. Haynes, S. S. Lau, L. Jia, D. Qiao, L. S. Yu
Publikováno v:
Journal of Applied Physics. 89:5543-5546
Al/Ti based metallization is commonly used for ohmic contacts to n-GaN and related compounds. We have previously reported an ohmic contact scheme specially designed for AlGaN/GaN heterostructure field-effect transistors (HFETs) [D. Qiao et al., Appl.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::066b9a9fc14cced9a687b9963abd25e2
https://doi.org/10.1063/1.1365431
https://doi.org/10.1063/1.1365431
Autor:
Jaroslaw Z. Domagala, Mourad Benamara, Edwin L. Piner, J. Bak-Misiuk, Z. Liliental-Webber, John C. Roberts, Jack Washburn, Salah M. Bedair
Publikováno v:
Journal of Electronic Materials. 30:439-444
Double-crystal and triple-axis x-ray diffractometry and transmission electron microscopy are used to characterize the microstructure, strain, and composition of InGaN layers grown on GaN by metalorganic chemical vapor deposition (MOCVD). Three differ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::976463ff9182880a575f3c02651286e0
https://doi.org/10.1007/s11664-001-0056-5
https://doi.org/10.1007/s11664-001-0056-5
Publikováno v:
Solid State Communications. 113:553-558
We report on in situ studies of the vibrational properties of Si nanoparticles and ultrathin layers grown by dc magnetron sputtering in ultrahigh vacuum on amorphous MgO and Ag buffer layers. The average thickness of the Si layers ranged from monolay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f2bcf8beee9b9c0d1292b33fc57a572
https://doi.org/10.1016/s0038-1098(99)00539-6
https://doi.org/10.1016/s0038-1098(99)00539-6
Autor:
Michael Wraback, Alexander Syrkin, Oleg Kovalenkov, Hongen Shen, Z. Liliental-Weber, Vladimir Ivantsov, E. D. Readinger, Alexander Usikov, Meredith Reed, Vladimir A. Dmitriev
Publikováno v:
physica status solidi c. 5:2244-2246
In this paper we report on first InGaN-based light emitting structures grown by hydride vapour phase epitaxy (HVPE). InGaN layers and multi layer InGaN/InGaN epitaxial structures were grown on GaN/sapphire template substrates and characterized. InN c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed579e85f2706d9d4cbb0c6f9d789f79
https://doi.org/10.1002/pssc.200778647
https://doi.org/10.1002/pssc.200778647