Zobrazeno 1 - 10
of 82
pro vyhledávání: '"Z. L. Liau"'
Autor:
Z. L. Liau, A. A. Liau
Publikováno v:
Applied Physics Letters. 78:3726-3728
Evanescent-wave tunneling of visible light is shown to be sensitive to the nanometer air gaps between dielectrics of high refractive indices. The narrow air gap in molecular-force bonded GaP/GaP was then measured to be 1.3 nm.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e11ef25f31290dec40f3f216527e674d
https://doi.org/10.1063/1.1377313
https://doi.org/10.1063/1.1377313
Autor:
Z. L. Liau
Publikováno v:
Applied Physics Letters. 77:651-653
Liquid surface tension has been used to pull different semiconductor wafers to very close contact and strong bonding. Bonded wafers, such as GaAs/GaP, were heat treated without pressure application to achieve wafer fusion. The bonding process has bee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3b7cb61deff56f589087a1eb0be3781
https://doi.org/10.1063/1.127074
https://doi.org/10.1063/1.127074
Autor:
Z. L. Liau, H. J. Zeiger
Publikováno v:
Journal of Applied Physics. 67:2434-2440
A comprehensive model of the mass‐transport phenomenon at the surface of compound semiconductors has been developed and experimentally confirmed. In the model, the effect of surface curvature on thermal decomposition and the resulting diffusion and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a405a42d31af829cfaf3102b3caa1b2
https://doi.org/10.1063/1.345513
https://doi.org/10.1063/1.345513
Publikováno v:
Journal of Applied Physics. 117:014502
We investigate solid-immersion fluorescence microscopy suitable for super-resolution nanotechnology and biological imaging, and have observed limit of resolution as small as 15 nm with microspheres, mitochondria, and chromatin fibers. We have further
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e860570edfb57e499cddfcf05b14621e
https://doi.org/10.1063/1.4905284
https://doi.org/10.1063/1.4905284
Autor:
Z. L. Liau
Publikováno v:
Physical Review B. 55:12899-12901
A model has been developed for the periodic strain field near the wafer-fusion interface of lattice-mismatched single crystals. A solution has been found that satisfies the elastic mechanical equilibrium and the boundary conditions. It reveals a wavy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::528c00c6ba86d9149886c8b09e5410ad
https://doi.org/10.1103/physrevb.55.12899
https://doi.org/10.1103/physrevb.55.12899
Publikováno v:
Journal of Applied Physics. 79:2148-2150
Molecular‐beam epitaxy was used to grow a 100 nm Al0.1Ga0.9N/100 nm GaN/500 nm Al0.1Ga0.9N double heterostructure on a 10‐μm‐thick GaN buffer layer grown with hydride vapor phase epitaxy on (0001) sapphire. Lasing from the 100 nm GaN active la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e1ec816184e6a03ef4e4c2008f7f2a0
https://doi.org/10.1063/1.361044
https://doi.org/10.1063/1.361044
Publikováno v:
MRS Proceedings. 768
Atomic wafer fusion of GaSb to GaAs, and the transfer of epitaxial GaSb/GaInAsSb/GaSb heterostructures to GaAs by fusion and substrate removal are demonstrated for the first time. Wafers and epilayers were fused with or without application of mechani
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::276d316160d9b20e53e702217a7b19d1
https://doi.org/10.1557/proc-768-g4.3
https://doi.org/10.1557/proc-768-g4.3
Publikováno v:
Applied Physics Letters. 65:2251-2253
Double‐heterostructure diode lasers emitting at ∼3.9 μm have exhibited pulsed operation at temperatures up to 170 K and cw operation up to 105 K, with single‐ended cw output power of 30 mW at 70 K. The laser structure, grown on GaSb substrates
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3971f2ed0f969f1de9e750aa133ef11c
https://doi.org/10.1063/1.112779
https://doi.org/10.1063/1.112779
Autor:
Z. L. Liau, H. K. Choi
Publikováno v:
Applied Physics Letters. 64:3219-3221
A new strained‐layer multiple‐quantum‐well (MQW) heterostructure comprising InAs1−xSbx wells and In1−yGayAs barrier layers is proposed for improved 4–5 μm lasers. Both well and barrier compositions are close to InAs and are potentially w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::036291ed55f729b246aa6d45a293fd86
https://doi.org/10.1063/1.111341
https://doi.org/10.1063/1.111341
Autor:
D.M. Depoy, C.A. Wang, G. Nichols, Z. L. Liau, P. W. O’Brien, A.C. Anderson, D. A. Shiau, P. G. Murphy
This paper discusses recent efforts to realize GaInAsSb/GaSb TPV cells with an internal back‐surface reflector (BSR). The cells are fabricated by wafer‐bonding GaInAsSb/GaSb device layers to GaAs substrates with a dielectric/Au reflector, removin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31436b7a64d43e16a26120ddd26ffb3b
https://doi.org/10.2172/821703
https://doi.org/10.2172/821703
