Effect of neutron irradiation on characteristics of power ІnGaN/GaN light-emitting diodes

Autor: A. I. Vlasenko, V. P. Veleschuk, Z. K. Vlasenko, M. P. Kisselyuk, P. G. Lytovchenko, I. V. Petrenko, V. P. Tartachnyk, M. B. Pinkovska

Publikováno v: Âderna Fìzika ta Energetika, Vol 16, Iss 4, Pp 362-366 (2015)

Effect of the reactor fast neutron flux (E = 2 MeV, Ф = 2⋅1014 n/cm2) on the current-voltage, capacitance-voltage characteristics, the electroluminescence intensity of power ІnGaN/GaN LEDs on the SіC and AuSn/Si substrates are studied. It was re

Externí odkaz: https://doaj.org/article/da621bd4936b4236a9388571a0e2a435

Melting Threshold and Thermal Conductivity of CdTe Under Pulsed Laser Irradiation

Autor: Toru Aoki, Z. K. Vlasenko, Vasyl Kuryliuk, K. Dubyk, A. V. Shefer, S.N. Levytskyi, V. P. Veleschuk, A. G. Kuzmich, Volodymyr A. Gnatyuk, Mykola Isaiev

Publikováno v: Lecture Notes in Networks and Systems
Lecture Notes in Networks and Systems, pp.101-109, 2020, ⟨10.1007/978-3-030-36841-8_10⟩
Lecture Notes in Networks and Systems ISBN: 9783030368401

The paper is devoted to the study of the features of CdTe surface treatment under laser irradiation with both different wavelengths (λ = 300–800 nm) and pulse durations (τp = 7 ns–1 ms). The thermal conductivity of the semi-insulating p-like Cd

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a055fbe915ddef1d4132ebe0d7436ce9
https://hal.archives-ouvertes.fr/hal-02920188

Dependence of the CdTe Melting Threshold on the Pulse Duration and Wavelength of Laser Radiation and the Parameters of Non-Equilibrium Charge Carriers

Autor: Z. K. Vlasenko, O. I. Vlasenko, S.N. Levytskyi, V.P. Veleschuk, Volodymyr A. Gnatyuk

Publikováno v: Ukrainian Journal of Physics; Vol. 62 No. 2 (2017); 159
Український фізичний журнал; Том 62 № 2 (2017); 159

The dependences of the melting threshold of CdTe under the pulsed laser irradiation on the radiation wavelength л and the laser pulse duration тp are calculated with regard for the non-equilibrium character of charge carriers. Three components of t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eef76f50d9817fb704632d4ec5f94ccd
https://doi.org/10.15407/ujpe62.02.0159

Generation of dislocations in the CdTe/CdHgTe variband heterosystem at the initial stages of epitaxial growth

Autor: I. A. Rudyĭ, I. V. Kurilo, Z. K. Vlasenko, A. I. Vlasenko

Publikováno v: Physics of the Solid State. 48:464-470

Microscopic studies, composition analyses, and studies of microhardness have shown that the epitaxial CdTe/CdHgTe variband heterosystem contains a developed system of dislocation ensembles of various nature (in-grown, mismatching, generated on the jo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::793dac4fcd4371a4c8bd5be2bb055bf2
https://doi.org/10.1134/s1063783406030103

Visible Luminescence of the InGaN/GaN Ultraviolet Light-emitting Diodes 365 nm

Autor: I. V. Petrenko, V. P. Tartachnyk, V. P. Veleschuk, O. M. Kamuz, V. V. Borshch, D. N. Khmil, Z. K. Vlasenko, A. V. Shulga, A. I. Vlasenko

Publikováno v: Journal of Nano- and Electronic Physics. 9:05031-1

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ddfb1bb50b29f01115e5628087b8b4ff
https://doi.org/10.21272/jnep.9(5).05031