Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Z. I. Zakharuk"'
Autor:
V. M. Sklyarchuk, Z. I. Zakharuk, M. H. Kolisnyk, A. I. Rarenko, O. F. Sklyarchuk, P. M. Fochuk
Publikováno v:
Фізика і хімія твердого тіла, Vol 20, Iss 3, Pp 257-263 (2019)
The electrical characteristics of In-doped Cd0.9Zn0.1Te (CZT:In) crystals with concentration of Со=3,5*1017 cm-3, which are used in X- and gamma-radiation detectors, were investigated during their growth. CZT:In crystals possess a weakly pronounced
Externí odkaz:
https://doaj.org/article/ac77d876125d4229b94efedfe979f782
Publikováno v:
Фізика і хімія твердого тіла, Vol 19, Iss 3, Pp 239-245 (2018)
Based on X-ray studies, conditions for growth of high structural perfect Cd1-хZnxTe (0,02≤х≤0,1) crystalshave been optimized. In crystals obtained, changes in the structure, electrical parameters and optical transmissionat samples irradiation b
Externí odkaz:
https://doaj.org/article/bb72ccda3cc04fd1967d2270739902eb
Publikováno v:
Фізика і хімія твердого тіла, Vol 18, Iss 1, Pp 29-33 (2018)
Results of Hall effect measurements of cadmium telluride crystals, doped by silicon (dopant concentration in the melt was 1018 - 1019 cm-3), allowed to classify the studied samples and the conditions under which probably the definite crystal and impu
Externí odkaz:
https://doaj.org/article/ec49249f295d49c7b07ba34df2982cdc
Autor:
Ye. S. Nykoniuk, Z. I. Zakharuk, S. V. Solodin, P. M. Fochuk, S. G. Dremluyzhenko, I. M. Yuriychuk, B. P. Rudyk
Publikováno v:
Фізика і хімія твердого тіла, Vol 18, Iss 3, Pp 334-337 (2018)
Electrical properties of semi-insulating CdTe-Cl crystals, grown by the vertical Bridgman and the travelling heater method, have been studied. It is found that the travelling heater method provides electron conductivity of the crystals, and the verti
Externí odkaz:
https://doaj.org/article/ceb765f085b943c1a87c9760ae4d6e80
Autor:
O. V. Galochkin, S. G. Dremluzhenko, Z. I. Zakharuk, V. M. Sklyarchuk, V. Z. Tsaliy, A. A. Asheulov
Publikováno v:
Фізика і хімія твердого тіла, Vol 17, Iss 1, Pp 129-133 (2017)
The perfect single crystals of mercury-indium telluride were grown by the modified method of zone melting. The differential thermal analysis (DTA) and X-ray structure analysis are performed.
Externí odkaz:
https://doaj.org/article/185f1c30f7ab4fe793ded5254925dcfc
Autor:
S. Solodin, O. F. Sklyarchuk, A. I. Rarenko, P. M. Fochuk, Ralph B. James, Aleksey E. Bolotnikov, Valery M. Sklyarchuk, Z. I. Zakharuk
Publikováno v:
IEEE Transactions on Nuclear Science. 67:2439-2444
The electrical and spectrometric characteristics of the Cr/cadmium telluride (CdTe)/Pt structure with a metal–semiconductor type rectifying contact, used in X/ $\gamma $ -ray detectors, are investigated. For the detectors fabrication, chlorine-dope
Publikováno v:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXIII.
The design and technology of photodiodes manufacturing with a potential barrier as Schottky contact based on a substrate of radiation-resistant n-Hg3In2Te6 single crystal are presented. The photosensitivity of the photodetector covers the wavelength
Autor:
Valery M. Sklyarchuk, M.H. Kolisnyk, P. M. Fochuk, А.I. Rarenko, Z. I. Zakharuk, O. F. Sklyarchuk
Publikováno v:
Фізика і хімія твердого тіла, Vol 20, Iss 3, Pp 257-263 (2019)
The electrical characteristics of In-doped Cd0.9Zn0.1Te (CZT:In) crystals with concentration of Со=3,5*1017 cm-3, which are used in X- and gamma-radiation detectors, were investigated during their growth. CZT:In crystals possess a weakly pronounced
Publikováno v:
Фізика і хімія твердого тіла, Vol 19, Iss 3, Pp 239-245 (2018)
Based on X-ray studies, conditions for growth of high structural perfect Cd1-хZnxTe (0,02≤х≤0,1) crystalshave been optimized. In crystals obtained, changes in the structure, electrical parameters and optical transmissionat samples irradiation b
Publikováno v:
Chernivtsi University Scientific Herald. Chemistry. :72-79
For the first time, the results of a study of the high-temperature electrical characteristics of undoped Cd1-xMnxTe single crystals in a wide composition range x = 0.05-0.55 are described. For this purpose, a study of Hall effect was made at the temp