Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Z. Huszka"'
Publikováno v:
IEEE Journal of Solid-State Circuits. 44:2267-2275
The collector current Ic of a bipolar transistor does not instantaneously respond to changes in applied base-emitter voltage Vbe ; its response exhibits a time lag because of the finite transit time of carriers through the transistor, which is manife
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e4bcd0b70e5f48af13f3ebb03b6cdd0
https://doi.org/10.1109/jssc.2009.2022667
https://doi.org/10.1109/jssc.2009.2022667
The accurate determination of the emitter series resistance RE has been topic for numerous investigations throughout the development of modern bipolar device technologies. A good knowledge of the parasitic resistances of the device under test is impo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9df02a09bbfd582d5f74c93269ee3de4
https://hal.archives-ouvertes.fr/hal-00987233
https://hal.archives-ouvertes.fr/hal-00987233
Publikováno v:
2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
The base-emitter (BE) depletion charge weighting factor h jei accounts for the variation of the BE space charge region (SCR) with bias. In former HICUM model releases this weighting factor was a fixed model parameter value independent of device bias
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::902870d73e43135839958b86e17f1e05
https://doi.org/10.1109/bctm.2012.6352638
https://doi.org/10.1109/bctm.2012.6352638
Determination methods for the emitter resistance of bipolar transistors are reviewed and evaluated with respect to the constraints introduced by modern SiGe:C HBT processes with f MAX reaching 500GHz [1]. Maximum transistor performance is obtained at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c0535b161a8aeba7682f2a24abd05486
Publikováno v:
2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
This paper presents a novel Verilog-A model that implements an idealized frequency dependent phase shift (excess-phase) in the small-signal transconductance but, unlike previous approaches, introduces no magnitude dependence. It has been claimed that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f357aca94a892f1d0a3de3a3b5368ccd
https://doi.org/10.1109/bipol.2008.4662715
https://doi.org/10.1109/bipol.2008.4662715
Publikováno v:
Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006..
This paper presents a new accurate method for generation of 1/f noise worst cases (WC) based on statistical measurement data. This is implemented in existing state of the art design simulators with a scaled flicker noise model for CMOS. Verification
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a512277c1fcf2151e6a7b57b5044225
https://doi.org/10.1109/mixdes.2006.1706551
https://doi.org/10.1109/mixdes.2006.1706551
Publikováno v:
Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005..
An approach exploiting the joint information in h/sub 11/ and h/sub 21/ is suggested for extracting the base and emitter resistance of bipolar transistors. Based on the complete small signal equivalent, robust formulae are presented capturing all err
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::558c2640c62a7125f4ef1ebc29cddce9
https://doi.org/10.1109/bipol.2005.1555229
https://doi.org/10.1109/bipol.2005.1555229
Publikováno v:
2005 European Microwave Conference.
An improved structure for integrated inductors which reduces effectively eddy currents induced into the lossy silicon substrate is introduced. The structure is based on a highly resistive area preventing currents in the substrate. Natural resources o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea158a85970e26032b18a11b6d17f9fc
https://doi.org/10.1109/eumc.2005.1608796
https://doi.org/10.1109/eumc.2005.1608796
Autor:
Z. Huszka
Publikováno v:
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fca5824261c9790dc14f9d22e86652c
https://doi.org/10.1109/bipol.2004.1365797
https://doi.org/10.1109/bipol.2004.1365797
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.