Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Z. Hammadi"'
Publikováno v:
The International Archives of the Photogrammetry, Remote Sensing and Spatial Information Sciences, Vol XLI-B3, Pp 151-154 (2016)
Providing high quality 3D data with reasonable quality and cost were always essential, affording the core data and foundation for developing an information-based decision-making tool of urban environments with the capability of providing decision mak
Externí odkaz:
https://doaj.org/article/5c8b3f5dfd1944a1bd5df8d8f0b208b2
Publikováno v:
Journal of Inorganic and Organometallic Polymers and Materials. 31:1176-1184
Nanocomposites based on zirconium oxide, modified with o-Aminosulfanilic acid have been synthetized. Samples have been prepared by chemical polymerization. The resulting products were fully characterized by XPS, XRD, FTIR, SEM and UV–vis spectrosco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b979356bece82222b84dfca1ed77ddbe
https://doi.org/10.1007/s10904-020-01730-3
https://doi.org/10.1007/s10904-020-01730-3
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
Surface Review and Letters. :9-13
The structural properties of clean silicon (100) surface have been investigated by RHEED. The clean surface is reconstructed and the RHEED pattern shows superstructures associated to (2×1) and (1×2) domains. We recorded the intensity of the integer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32049d3352d40f94625ed6571c3881ae
https://doi.org/10.1142/s0218625x98000050
https://doi.org/10.1142/s0218625x98000050
Publikováno v:
Materials Science and Engineering: B. 40:63-66
Be + implantation technology has been applied to realize p + /n − junctions in quaternary GaInAsSb n − alloys grown on GaSb substrates by liquid phase epitaxy. 2 μm cut-off mesa homojunctions have been prepared and characterized: the external qu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::100cb43cb5e65a7f831ff6b02f3489fc
https://doi.org/10.1016/0921-5107(96)01600-5
https://doi.org/10.1016/0921-5107(96)01600-5
Publikováno v:
Surface Science. 341:202-212
The dielectric function of the (7 × 7) Si(111) surface has been directly determined in UHV conditions by ellipsometric measurements on a Si(111) clean surface. The dielectric function obtained from ellipsometric spectra near the pseudo-Brewster angl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3d517047a63c9209b6a074f8fc9c4ca
https://doi.org/10.1016/0039-6028(95)00592-7
https://doi.org/10.1016/0039-6028(95)00592-7
Publikováno v:
Journal of Applied Physics. 73:5213-5215
Chemical‐vapor deposition of copper using copper (II) bis(acetylacetonate) is reported. It is shown that at 0.1 Torr and temperatures in the range of 250–350 °C, the deposition occurs only if oxygen is added in the reactor. Auger spectroscopy, x
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5631873915d6194d0005dcd6a6884520
https://doi.org/10.1063/1.353748
https://doi.org/10.1063/1.353748
Publikováno v:
Journal de Physique IV Proceedings
Journal de Physique IV Proceedings, EDP Sciences, 1993, 03 (C3), pp.C3-91-C3-98. ⟨10.1051/jp4:1993311⟩
Journal de Physique IV Proceedings, EDP Sciences, 1993, 03 (C3), pp.C3-91-C3-98. ⟨10.1051/jp4:1993311⟩
In this contribution we investigate the formation of copper films by chemical vapor deposition on silicon using the copper (II) bis(acetylacetonate) precursor. From Auger spectroscopy and ion sputtering, the chemical composition of the film is determ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1690f2de67260a8b6d6418a0ed3dbad3
https://hal.archives-ouvertes.fr/jpa-00251368/file/ajp-jp4199303C311.pdf
https://hal.archives-ouvertes.fr/jpa-00251368/file/ajp-jp4199303C311.pdf
Publikováno v:
Journal de Physique IV Proceedings
Journal de Physique IV Proceedings, EDP Sciences, 1991, 02 (C2), pp.C2-889-C2-895. ⟨10.1051/jp4:19912106⟩
Journal de Physique IV Proceedings, EDP Sciences, 1991, 02 (C2), pp.C2-889-C2-895. ⟨10.1051/jp4:19912106⟩
In this paper we present a study of copper CVD deposition on different types of substrates used for microelectronic devices. The influence of substrate temperature, pressure, flux and contamination effect of the gas phase has been determined to obtai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d5e741492ac3fa098b695b8b49e9ff68
https://hal.archives-ouvertes.fr/jpa-00249784/file/ajp-jp4199102C2106.pdf
https://hal.archives-ouvertes.fr/jpa-00249784/file/ajp-jp4199102C2106.pdf
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.