Zobrazeno 1 - 10
of 178
pro vyhledávání: '"Z. G. Ling"'
Publikováno v:
Zhonghua jie he he hu xi za zhi = Zhonghua jiehe he huxi zazhi = Chinese journal of tuberculosis and respiratory diseases. 40(4)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::86037afc657c0bd6611ec9d80b3a0c25
https://pubmed.ncbi.nlm.nih.gov/28395406
https://pubmed.ncbi.nlm.nih.gov/28395406
Publikováno v:
Microsystem Technologies. 6:235-240
This paper reports a research effort to design, microfabricate and test a DC type magnetohydrodynamic (MHD) micropump using LIGA method (Menz et al., 1991). The micropump is driven using the Lorentz force and can be used to deliver electrically condu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3dbf27d6ae22aad3fe2cfd210612109
https://doi.org/10.1007/s005420000068
https://doi.org/10.1007/s005420000068
Autor:
Z.-G. Ling, S.-Y. Qian
Publikováno v:
Proceedings of the Institution of Mechanical Engineers, Part A: Journal of Power and Energy. 212:135-140
A brief recommendation about solar energy resources and the status of solar house research and development in China is introduced. The reasons for the slow development of an active solar house in the past is analysed. By combining with various resear
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a0da2efb717c5a1ef6682b76e3c9610
https://doi.org/10.1243/0957650981536664
https://doi.org/10.1243/0957650981536664
Publikováno v:
Journal of Applied Physics. 75:2718-2720
Bulk lifetime and surface recombination velocities at both the front and the rear surfaces are important parameters that affect the performance of solar cells. In an earlier work [G. S. Kousik, Z. G. Ling and P. K. Ajmera, J. Appl. Phys. 72, 141 (199
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e22e1f0abb4d073472a45369f976bd7
https://doi.org/10.1063/1.356204
https://doi.org/10.1063/1.356204
Publikováno v:
Journal of Applied Physics. 75:2098-2104
We describe electrical measurement on exposed surfaces of n‐ and p‐type GaAs. The n‐type surface exhibits substantial electron‐hole pair generation and the subsequent escape of generated holes by leakage along the surface. In contrast, the su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::798cf14e1b332959dcc2f36b8562c44c
https://doi.org/10.1063/1.356997
https://doi.org/10.1063/1.356997
Publikováno v:
Journal of Applied Physics. 72:141-146
The modeling and analysis of electron devices including photovoltaic devices requires the knowledge of the surface recombination velocities at the two surfaces of the wafer along with the bulk lifetime. In this paper, the work of Luke and Cheng [J. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1df334f4002cb6b8505777166ea46a9
https://doi.org/10.1063/1.352174
https://doi.org/10.1063/1.352174
Publikováno v:
IEEE Transactions on Magnetics. 36:2882-2884
Uniaxial magnetic anisotropy was found in the Fe/Co/Cu/Co magnetoresistive structures deposited on Si(100) substrates. Samples magnetized along an easy anisotropy axis showed extremely sharp magnetization and magnetoresistance switching at low fields
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55745ca627a57dcfca8bff4a1fa6f832
https://doi.org/10.1109/20.908616
https://doi.org/10.1109/20.908616
Publikováno v:
The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991.
The work of K.L. Luke and L.-J. Cheng (1987) is extended to account for the asymmetric case of different surface recombination velocities at the two wafer surfaces. The authors present the analysis and discuss experimental procedures to extract the p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11bd791e8937e5923c5ceb784d8dca2d
https://doi.org/10.1109/pvsc.1991.169217
https://doi.org/10.1109/pvsc.1991.169217
Autor:
Z. G. Ling, P. K. Ajmera
Publikováno v:
Journal of Applied Physics. 69:519-521
Knowledge of both carrier bulk lifetime τb and surface recombination velocity S are necessary to analyze and model electron devices. In this paper, the analytical results of Luke and Cheng [J. Appl. Phys. 61, 2282 (1987)] are applied to examine exce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55f0ca574b54f6fbe98baaf17fb70461
https://doi.org/10.1063/1.348933
https://doi.org/10.1063/1.348933
Autor:
P. H. Oosthuizen, K. Rehme, B.J. Azzopardi, J. Corberan, M. C. Welsh, H. E. A. van den Akker, Y. Kurosaki, I. Zun, A. T. Prata, P. Di Marco, F. Mayinger, D. Mewes, Gian Piero Celata, Masahiro Shoji, L. J. Fang, M. Giot, P. Downar-Zapolski, P. R. Viswanath, F. A. Franca, J. R. Lloyd, L. F. Melo, N. Kasagi, K. T. Yang, Z. G. Ling, D. R. H. Beattie, W. Rodi, L. Maroti, Ramesh K. Shah, E. N. Ganic, B. S. Sundén, D. G. Kroger
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc25948d95e58230926261fb5d470eb0
https://doi.org/10.1016/b978-0-08-043328-8.50096-5
https://doi.org/10.1016/b978-0-08-043328-8.50096-5
