Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Z. Furmanik"'
Publikováno v:
Crystal Research and Technology. 27:959-964
In the experiment a (111) oriented silicon plate was subjected to implantation by 80 keV Ge ions. Then the pulsed-laser annealing of this sample was carried out by using neodymium laser to form several areas irradiated with different light power. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81c9ea143e9a2299be9fe82d4d30f2c9
https://doi.org/10.1002/crat.2170270715
https://doi.org/10.1002/crat.2170270715
Publikováno v:
International Journal of Radiation Applications and Instrumentation. Part D. Nuclear Tracks and Radiation Measurements. 19:803-806
Dislocation free Si crystals implanted with 16 MeV/n U-ions using Darmstadt accelerator have been investigated by X-ray diffraction methods. X-ray section topography showed that the induced damage range is a little larger than theoretically calculate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2b11508108d06f8a493cabfd4ffb95a1
https://doi.org/10.1016/1359-0189(91)90317-b
https://doi.org/10.1016/1359-0189(91)90317-b
Publikováno v:
Crystal Research and Technology. 25:971-976
The exact characterization of natural crystal faces is very important from the point of view of the proper conditions of crystal growth and of the choice of an appropriate substrate for obtaining epitaxial layers. In this work various X-ray diffracti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c56baacc095dda66b934d9687f6dc9ef
https://doi.org/10.1002/crat.2170250822
https://doi.org/10.1002/crat.2170250822
Publikováno v:
Crystal Research and Technology. 23:K20-K24
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e9243ddeb80b367263dc05ae84bbc02
https://doi.org/10.1002/crat.2170230124
https://doi.org/10.1002/crat.2170230124
Publikováno v:
Kristall und Technik. 15:301-304
In this paper the X-ray section topograph method was used for determination of damaged layer thickness of silicon crystal surface. For measurements such reflections should be chosen for which the “margine” effect is very sharp. It was used the fa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ecab48f2b39db6445fd268993a107e5
https://doi.org/10.1002/crat.19800150310
https://doi.org/10.1002/crat.19800150310
Publikováno v:
Crystal Research and Technology. 17:1167-1175
The influence of thermal annealing on the image contrast of the boundaries of 49BF2+-implanted regions in Si is investigated by means of X-ray topography. The contrast is used for studying the wafer bending and the stress types. It is shown that the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73276384b1a3a0958a8a631502ac15ad
https://doi.org/10.1002/crat.2170170916
https://doi.org/10.1002/crat.2170170916
Publikováno v:
Crystal Research and Technology. 20:931-935
The Pb0.8Sn0.2Te single crystal grown by the Bridgman technique was examined by X-ray and TEM methods. The X-ray reflection topography revealed that the PbSnTe crystal consisted of monocrystallinic blocks with linear dimensions of 1–5 mm separated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::582674cf1323aa8cdad62a4d4b3d4def
https://doi.org/10.1002/crat.2170200713
https://doi.org/10.1002/crat.2170200713
Publikováno v:
Journal of Crystal Growth. 46:293-296
The growth of single crystals of HgTe from the vapour phase and the effect of the thermodynamical conditions on the growing crystals has been described. Some of the crystallographic properties of the crystals grown have been presented.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a255edd6d735ac095c8592df346e14a
https://doi.org/10.1016/0022-0248(79)90073-3
https://doi.org/10.1016/0022-0248(79)90073-3
Autor:
Z. Furmanik, J. Auleytner
Publikováno v:
Crystal Research and Technology. 18:275-279
A combination of oscillating slit and oscillating film techniques is described. This X-ray topographical method allows reflections due to the same places on the crystal surface to be recorded first in form of a topogramme registrated on the oscillati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aecf22f25b4d47b459c4678e4247d9e1
https://doi.org/10.1002/crat.2170180225
https://doi.org/10.1002/crat.2170180225
Publikováno v:
Crystal Research and Technology. 20:1239-1243
The bending of 49BF-implanted Si wafers due to high-temperature annealing (T = 900 to 1100 °C) is investigated by means of X-ray topographic techniques. The results are comperatively considered with those for low-temperature annealing (T ≦ 800 °C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38f81ad480e2debd3c0d26cf2648bb9f
https://doi.org/10.1002/crat.2170200923
https://doi.org/10.1002/crat.2170200923