Výsledky vyhledávání - "Z. F. Krasilnik"

Kinetics of the Luminescence Response of Self-Assembled Ge(Si) Nanoislands Embedded in Two-Dimensional Photonic Crystals

Autor: M. V. Stepikhova, Sergey M. Sergeev, Mikhail Shaleev, A. V. Novikov, Artem N. Yablonskiy, N. A. Baidakova, Z. F. Krasilnik

Publikováno v: Semiconductors. 54:1352-1359

The results of studies of the spectral and kinetic characteristics of the photoluminescence of photonic crystals formed on the basis of structures with self-assembled Ge(Si) nanoislands are reported. The experimentally observed enhancement of the pho

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6718b9a5baa7ce6e84950d1551710eb1
https://doi.org/10.1134/s1063782620100334

Zobrazit plný text záznamu

Plný text ve formátu HTML

Enhancement of the Luminescence Signal from Self-Assembled Ge(Si) Nanoislands due to Interaction with the Modes of Two-Dimensional Photonic Crystals

Autor: Sergey A. Dyakov, Sergey M. Sergeev, D. E. Utkin, Z. F. Krasilnik, A. V. Novikov, D. V. Yurasov, M. V. Stepikhova, Artem N. Yablonskiy

Publikováno v: Semiconductors. 54:975-981

The results of studies of the luminescence properties of two-dimensional photonic crystals formed on the basis of silicon structures with self-assembled Ge(Si) nanoislands are reported. The possibilities of substantially enhancing the luminescence re

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bd5536d4fcefdfbf94c4bdfb24276c44
https://doi.org/10.1134/s1063782620080254

Zobrazit plný text záznamu

Plný text ve formátu HTML

Terahertz Emission from HgCdTe QWs under Long-Wavelength Optical Pumping

Autor: D. A. Ryzhov, Alexander A. Dubinov, D. I. Kuritsin, M. A. Fadeev, Sergey A. Dvoretsky, Carlo Sirtori, V. V. Utochkin, Z. F. Krasilnik, S. V. Morozov, V. Ya. Aleshkin, Frederic Teppe, V. V. Rumyantsev, A. V. Antonov, V. I. Gavrilenko, N. N. Mikhailov

Publikováno v: Journal of Infrared, Millimeter, and Terahertz Waves. 41:750-757

Currently semiconductor lasers in the wavelength range from 20 to 60 μm are scarce. HgTe/CdHgTe heterostructures is a potential basis for alternative sources of coherent radiation in this range. We propose that in such structures carrier heating is

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f26a7026f39219e472263145c80f7b8a
https://doi.org/10.1007/s10762-020-00706-1

Zobrazit plný text záznamu

Photonic BICs in Si structures with Ge self-assembled quantum dots

Autor: Sergei G. Tikhodeev, A. V. Novikov, Andrey Bogdanov, Artem N. Yablonskiy, M. V. Stepikhova, Sergey A. Dyakov, Z. F. Krasilnik, Nikolay A. Gippius, D. V. Yurasov

Publikováno v: 2021 IEEE Photonics Conference (IPC).

Germanium quantum dots are promising but their photoluminescence intensity is still insufficient for practical applications. It is demonstrated that their PL in silicon photonic crystal slab can be dramatically enhanced due to the involvement of the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ecf1c5fa2540cf4cbd903c8d6caf3257
https://doi.org/10.1109/ipc48725.2021.9592975

Zobrazit plný text záznamu

Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers

Autor: P. A. Bushuykin, V. Yu. Davydov, M. I. Kalinnikov, Pavel A. Yunin, A. V. Novikov, Z. F. Krasilnik, Artem N. Yablonskiy, L. V. Krasilnikova, E. V. Skorohodov, D. N. Lobanov, Boris A. Andreev

Publikováno v: Semiconductors. 53:1357-1362

The results of studies of the spontaneous photoluminescence and stimulated emission spectra of epitaxial n-InN layers with a concentration of free electrons of ~1019 cm–3 are reported. The layers are grown by molecular-beam epitaxy with the plasma

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::63f147a96c1927b039265ed4124020a2
https://doi.org/10.1134/s1063782619100038

Zobrazit plný text záznamu

Plný text ve formátu HTML

Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates

Autor: A. V. Novikov, N. A. Baidakova, Pavel A. Yunin, Artem N. Yablonskiy, M. A. Kalinnikov, P. A. Bushuykin, D. V. Yurasov, Z. F. Krasilnik, Boris A. Andreev, M. N. Drozdov

Publikováno v: Semiconductors. 53:1318-1323

Comparative studies of the luminescence properties of Sb-doped Ge layers grown on Ge(001) and Si(001) substrates are carried out. It is shown that, in contrast to the case of Ge:Sb layers grown on Si, a considerable contribution to the photoluminesce

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::41dd368a198b19b443377c53bad30a77
https://doi.org/10.1134/s1063782619100154

Zobrazit plný text záznamu

Plný text ve formátu HTML

Plasma-Assisted Molecular Beam Epitaxy of In-Rich InGaN: Growth Optimization for Near-IR Lasing

Autor: K. E. Kudryavtsev, D. N. Lobanov, L. V. Krasilnikova, A. N. Yablonskiy, P. A. Yunin, E.V. Skorokhodov, M. A. Kalinnikov, A.V. Novikov, B. A. Andreev, Z. F. Krasilnik

Publikováno v: ECS Journal of Solid State Science and Technology. 11:014003

Near-infrared stimulated emission (SE) from InGaN layers grown by plasma-assisted molecular beam epitaxy has been studied, and the influence of the growth temperature (T gr) on the SE threshold has been revealed. The obtained experimental data strong

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ce30113c2dafe2b46f44fcef425a729c
https://doi.org/10.1149/2162-8777/ac4d80

Zobrazit plný text záznamu

On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates

Autor: D. V. Yurasov, V. Ya. Aleshkin, N. V. Baidus, D. G. Reunov, A. V. Novikov, K. E. Kudryavtsev, S. M. Nekorkin, Z. F. Krasilnik, Mikhail Shaleev, A. V. Rykov, Alexander A. Dubinov, Pavel A. Yunin

Publikováno v: Semiconductors. 52:1547-1550

Stressed InGaAs/GaAs quantum-well laser structures are grown by gas-phase epitaxy from organometallic compounds on GaAs substrates and artificial Ge/Si substrates based on Si(001) with an epitaxial metamorphic Ge layer. To suppress the relaxation of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c80099f9dd1d6d8daacb987c20be8901
https://doi.org/10.1134/s1063782618120060

Zobrazit plný text záznamu

Plný text ve formátu HTML

Stimulated Emission in the 1.3–1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III–V Heterostructures on Silicon Substrates

Autor: Yu. L. Ryaboshtan, Z. F. Krasilnik, V. Ya. Aleshkin, K. E. Kudryatvsev, P. V. Gorlachuk, A. A. Marmalyuk, Alexander A. Dubinov, A. V. Novikov, D. V. Yurasov

Publikováno v: Semiconductors. 52:1495-1499

Hybrid laser structures with AlGaInAs quantum wells are grown by metalorganic vapor phase epitaxy on Ge/Si(100) “virtual” substrates using GaAs and InP buffer layers. Stimulated emission is achieved under optical pumping of the prepared samples i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::acdc4678e74ad1cc608f0316d162cff0
https://doi.org/10.1134/s1063782618110143

Zobrazit plný text záznamu

Stimulated Emission at 1.3-μm Wavelength in Metamorphic InGaAs/InGaAsP Structure with Quantum Wells Grown on Ge/Si(001) Substrate

Autor: N. V. Baidus, A. V. Rykov, I. V. Samartsev, B. N. Zvonkov, K. E. Kudryavtsev, O. V. Vikhrova, Alexander A. Dubinov, S. M. Nekorkin, V. Ya. Aleshkin, Z. F. Krasilnik, A. V. Novikov, D. V. Yurasov

Publikováno v: Technical Physics Letters. 44:735-738

A laser structure comprising metamorphic InGaAsP layer and InGaAs quantum wells on a non-inclined Si(001) substrate with relaxed Ge buffer layer has been grown for the first time by metal-organic vapor phase epitaxy (MOVPE). The optically pumped lase

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ca277fe5ad59ce306f2648ba6bf9a63b
https://doi.org/10.1134/s1063785018080175

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání