Zobrazeno 1 - 10
of 66
pro vyhledávání: '"Z. Djebbour"'
Autor:
P. Gilbert, F. H. Teherani, X. Arrateig, S. Gautier, A. Ougazzaden, H. Ghorbel, F. Bouyssou, Z. Djebbour, Y. Sama, I. Sidi-Boumeddine, H. Bouhnane, A. Brezart-Oudot, Arouna Darga, V. Sandana, Walid El-Huni, P. Maso, S. Le Gall, David J. Rogers, P. Bove
Publikováno v:
Sensors, Systems, and Next-Generation Satellites XXV
Sensors, Systems, and Next-Generation Satellites XXV, Sep 2021, Online Only, SPIE, pp.41, 2021, ⟨10.1117/12.2603565⟩
Sensors, Systems, and Next-Generation Satellites XXV, Sep 2021, Online Only, SPIE, pp.41, 2021, ⟨10.1117/12.2603565⟩
International audience; With the advent of “New Space” and the explosion of nanosatellite missions, an extended latitude is offered for the emergence of innovative technological devices such as novel compact solid state UVC sensors. In this conte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dbadaf0854d518907d0fbe795f1f0ef8
https://hal-cnrs.archives-ouvertes.fr/hal-03414495
https://hal-cnrs.archives-ouvertes.fr/hal-03414495
Autor:
Jérôme Michallon, Alexandra Levtchenko, Raphaël Lachaume, Stéphane Collin, Jean-Paul Kleider, Z. Djebbour, Sylvain Le Gall, José Alvarez
Publikováno v:
Nanotechnology
Nanotechnology, Institute of Physics, 2018, nanotechnology, 29 (25), pp.255401. ⟨10.1088/1361-6528/aab7e8⟩
Nanotechnology, Institute of Physics, 2018, nanotechnology, 29 (25), pp.255401. ⟨10.1088/1361-6528/aab7e8⟩
International audience; By coupling optical and electrical modeling, we have investigated the photovoltaic performances of p-i-n radial nanowires array based on crystalline p-type silicon (c-Si) core/hydrogenated amorphous silicon (a-Si:H) shell. By
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::23d6bacc22a7621a4d8d007d4292dc7e
https://hal.archives-ouvertes.fr/hal-01738024
https://hal.archives-ouvertes.fr/hal-01738024
Autor:
Jean-Paul Salvestrini, Walid El-Huni, Anne Migan-Dubois, Paul L. Voss, Z. Djebbour, Abdallah Ougazzaden
Publikováno v:
Solar Energy
Solar Energy, Elsevier, 2017, 157, pp.687-691. ⟨10.1016/j.solener.2017.08.074⟩
Solar Energy, 2017, 157, pp.687-691. ⟨10.1016/j.solener.2017.08.074⟩
Solar Energy, Elsevier, 2017, 157, pp.687-691. ⟨10.1016/j.solener.2017.08.074⟩
Solar Energy, 2017, 157, pp.687-691. ⟨10.1016/j.solener.2017.08.074⟩
Due to its high absorption coefficient and variable bandgap, InGaN is being intensively studied for photovoltaic applications. Growth of thick homogenous InGaN absorbers is challenging due to relaxation, clustering, and transition from 2D to 3D growt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4c29405f741026ade96590cebc0597b
https://hal.archives-ouvertes.fr/hal-01630066
https://hal.archives-ouvertes.fr/hal-01630066
Autor:
Z. Djebbour, Simon Gautier, Konstantinos Pantzas, Anne Migan-Dubois, Tarik Moudakir, S. Suresh, Abdallah Ougazzaden, V. Gorge
Publikováno v:
Materials Science and Engineering
Materials Science and Engineering, 2013, B 178, pp.142-148. ⟨10.1016/j.mseb.2012.10.033⟩
Materials Science and Engineering, Elsevier, 2013, B 178, pp.142-148. ⟨10.1016/j.mseb.2012.10.033⟩
Materials Science and Engineering, 2013, B 178, pp.142-148. ⟨10.1016/j.mseb.2012.10.033⟩
Materials Science and Engineering, Elsevier, 2013, B 178, pp.142-148. ⟨10.1016/j.mseb.2012.10.033⟩
International audience; In this paper, we have used simulations to evaluate the impact of the distribution of electrically active defects on the photovoltaic performances of InGaN-based solar cell. The simulations were carried out using Silvaco's ATL
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::38064b493aba201f8c7448432256e71a
https://hal.science/hal-00764807/document
https://hal.science/hal-00764807/document
Autor:
Christelle Pareige, Konstantinos Pantzas, G. Orsal, Abdallah Ougazzaden, Tarik Moudakir, Christophe Longeaud, Paul L. Voss, Vanessa Gorge, Simon Gautier, Z. Djebbour, Anne Migan-Dubois
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2011, 99 (6), pp.062113. ⟨10.1063/1.3624598⟩
Applied Physics Letters, 2011, 99 (6), pp.062113. ⟨10.1063/1.3624598⟩
Applied Physics Letters, American Institute of Physics, 2011, 99 (6), pp.062113
Applied Physics Letters, American Institute of Physics, 2011, 99 (6), pp.062113. ⟨10.1063/1.3624598⟩
Applied Physics Letters, 2011, 99 (6), pp.062113. ⟨10.1063/1.3624598⟩
Applied Physics Letters, American Institute of Physics, 2011, 99 (6), pp.062113
LGEP 2011 ID = 751; International audience; We report on the crystal quality of metalorganic vapour phase epitaxy-grown InGaN with indium content ranging from 0% to 20%. Absorbance measurements are fit to a model including band tails and a defect rep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b8cb3341e528ba62a9994eb193a2b8e
https://hal-supelec.archives-ouvertes.fr/hal-00710730
https://hal-supelec.archives-ouvertes.fr/hal-00710730
Autor:
N. Beldi, Tayeb Mohammed-Brahim, Jean-Paul Kleider, L. Chahed, Z. Djebbour, Christophe Longeaud, T. Smaïl, Denis Mencaraglia, J. Sib
Publikováno v:
Journal of Non-Crystalline Solids. :309-312
Hydrogen content in hydrogenated amorphous silicon deposited at high rate (around 15 A/s) by dc magnetron sputtering is optimised by varying the hydrogen partial pressure at a given temperature. The effect of the hydrogen can be described in two step
Publikováno v:
Journal of Non-Crystalline Solids. :247-250
The energetic distribution of localized states in the gap of the intrinsic layer of amorphous silicon (a-Si:H) PIN devices was investigated by the Below Gap Modulated Photocurrent Spectroscopy (BGMPCS) technique. To account for the experimental resul
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, 2010, 108 (4), pp.043707
Journal of Applied Physics, American Institute of Physics, 2010, 108 (4), pp.043707
Journal of Applied Physics, 2010, 108 (4), pp.043707
Journal of Applied Physics, American Institute of Physics, 2010, 108 (4), pp.043707
In this paper, a theoretical background of subgap modulated photocurrent experiment is presented. It allows the investigation of the density of states DOS distribution, directly from the active region of a semiconductor heterojunction device. The jun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7d6a6bf8722f2f90601875d7400f01ed
https://centralesupelec.hal.science/hal-00555238
https://centralesupelec.hal.science/hal-00555238
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Publikováno v:
Thin Solid Films
Thin Solid Films, Elsevier, 2003, 431–432, pp.135-142. ⟨10.1016/S0040-6090(03)00198-6⟩
Thin Solid Films, 2003, 431–432, pp.135-142. ⟨10.1016/S0040-6090(03)00198-6⟩
Thin Solid Films, Elsevier, 2003, 431–432, pp.135-142. ⟨10.1016/S0040-6090(03)00198-6⟩
Thin Solid Films, 2003, 431–432, pp.135-142. ⟨10.1016/S0040-6090(03)00198-6⟩
International audience; Admittance spectroscopy of rectifying junctions is known to be a powerful technique for the characterization of bulk or interface defect properties in crystalline semiconductor based devices. In the case of non-crystalline sem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::635c4458ff52b523ec1575a46a27c63f
https://hal.archives-ouvertes.fr/hal-01276987
https://hal.archives-ouvertes.fr/hal-01276987