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Surface and interface properties of InSb epitaxial thin films grown on GaAs by low pressure metallorganic chemical vapor deposition

Autor: R. A. Stall, Kian-Ming Tan, J. Y. Lin, Ian T. Ferguson, M. Pelczynski, Andrew T. S. Wee, Z. C. Fenge, K. Li

Publikováno v: Scopus-Elsevier
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There is increasing interest in the epitaxial growth of high quality InSb thin films on GaAs substrates for many device applications such as infrared optoelectronics. The large lattice mismatch (14.6%) between InSb and GaAs has meant that both growth

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b5858d14417e70df3752535da27a3d27
http://www.scopus.com/inward/record.url?eid=2-s2.0-0031385337&partnerID=MN8TOARS

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