Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Z. A. Isakhanov"'
Autor:
Z. A. Isakhanov, B. E. Umirzakov, D. Kh. Nabiev, G. T. Imanova, I. R. Bekpulatov, F. Ya. Khudaykulov, S. S. Iskhakova, Kh. E. Abdiyev
Publikováno v:
Micro and Nano Systems Letters, Vol 12, Iss 1, Pp 1-7 (2024)
Abstract In this paper, using high-dose implantation of O2 + ions, nano-sized WO3 films were obtained on the surface and at various depths of W(111) for the first time. It has been confirmed that when O2 + ions are implanted into W at room temperatur
Externí odkaz:
https://doaj.org/article/67ced8f669b9419688904b439cf555f9
Publikováno v:
Technical Physics Letters. 47:11-15
The dynamics of changes in the crystal structure and in the elemental and chemical composition of Si surface layers implanted with Na+, Rb+, and Cs+ ions in the process of stepwise annealing under different temperature conditions has been studied. It
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6900586dfa51a805f1ce1b657d96c983
https://doi.org/10.1134/s1063785021010120
https://doi.org/10.1134/s1063785021010120
Publikováno v:
Technical Physics. 65:114-117
Using the methods of Auger electron spectroscopy, electron energy loss spectroscopy, and UV photoelectron spectroscopy, the influence of Ba+ ion implantation on the composition, crystal structure, and electron configuration of the surface of Si–Cu(
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e7710a056c3178e7d9d04e335c78efb
https://doi.org/10.1134/s1063784220010090
https://doi.org/10.1134/s1063784220010090
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 13:640-643
The results obtained using secondary-ion mass spectrometry under the bombardment of Si(111) crystals are analyzed. It is shown that, as bombarding ion masses are increased in the case of the same energy, the relative yield of cluster ions and the thr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79e973968d07e47936dd32145d5ef171
https://doi.org/10.1134/s1027451019040049
https://doi.org/10.1134/s1027451019040049
Publikováno v:
Technical Physics. 64:881-883
The composition and parameters of energy bands in thin SiO2 films grown on the surface of a free Si/Cu film system have been studied. It has been shown that unlike SiO2 films grown on thick films, the value of Eg for thin SiO2 films is no higher than
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2f53c4a142b8e6ba7ce0a330a9a965d
https://doi.org/10.1134/s1063784219060239
https://doi.org/10.1134/s1063784219060239
Autor:
B. E. Umirzakov, T. Kodirov, Z. E. Muhtarov, Z. A. Isakhanov, M. K. Ruzibaeva, A. S. Halmatov
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 11:152-154
The effect of Co+-ion implantation on the surface composition and the depth distribution profiles of atoms in a Si–Cu (100) heterostructure is investigated. After heating of the ion-implanted sample, a 50–60 A thick CoSi2 film is formed. It is re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bbcea84174da96556b675827f7fab54
https://doi.org/10.1134/s1027451017010128
https://doi.org/10.1134/s1027451017010128
Publikováno v:
Technical Physics. 60:1880-1883
We study the effect of bombardment with Ar+ and Ba+ ions on the composition and electron structure of the CdTe film surface. The optimal ion implantation and annealing regimes for obtaining a nanofilm of the Cd0.5Ba0.5Te type are determined. It is fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0117fd9155cec953efc22fb1b85ff23
https://doi.org/10.1134/s1063784215120130
https://doi.org/10.1134/s1063784215120130
Publikováno v:
Technical Physics. 61:953-955
Optical transmission is used to study the electronic structure of nanosized Cu phases that are obtained on the surface of single-crystalline NaCl (100) using vacuum deposition. It is demonstrated that Cu nanofilms with a thickness of 1–1.5 monolaye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51eb7d665177d2eaa79d2f6b7f1dce91
https://doi.org/10.1134/s1063784216060074
https://doi.org/10.1134/s1063784216060074
Publikováno v:
Technical Physics. 60:600-602
We report on the results of analysis of the composition, crystal structure, and profiles of atomic distribution over the depth of a free Cu (100) film with coated with Si nanofilms with various thicknesses. It is shown that for silicon film thickness
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb131b07ecba565020332960ae965634
https://doi.org/10.1134/s1063784215040301
https://doi.org/10.1134/s1063784215040301
Publikováno v:
Technical Physics. 60:313-315
The implantation of the O2+ ions at low energies of E0 ≤ 2–3 keV and high doses of D ≥ 1016 cm−2 leads to significant variations in the composition and amorphization of the TiN surface layer. The postimplantation annealing at a temperature of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16b4c4b2d81dbd875605ac92c1e8c240
https://doi.org/10.1134/s1063784215020097
https://doi.org/10.1134/s1063784215020097